Results 181 to 190 of about 637,262 (217)

Muonium states and dynamics in 4H and 6H silicon carbide

Physica B: Condensed Matter, 2006
Abstract Two isotropic Mu 0 centers are found in 4H Silicon Carbide (SiC) and a total of four Mu 0 states are seen in the 6H–SiC polytype. We report the temperature dependence of hyperfine constants, signal amplitudes, and relaxation rates for three Mu 0 centers in p-type 6H–SiC from spin precession data at 6 T.
H.N. Bani-Salameh, Y.G. Celebi, K.H. Chow, B.E. Coss, S.F.J. Cox, R.L. Lichti   +5 more
openaire   +1 more source

Charge Sheet Super Junction in 4H-Silicon Carbide

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2020
SuperJunctions (SJs) have long been realized in Si. However, their fabrication in 4H-Silicon Carbide (SiC) has been problematic because of poor control of the p-dopant activation efficiency in SiC. We propose that this problem related to SiC material be overcome using a version of SJ called Charge Sheet SJ (CSSJ) which we proposed in the context of Si ...
K. Akshay, M. G. Jaikumar, Shreepad Karmalkar   +2 more
openaire   +1 more source

Hyperfine spectroscopy of muonium in 4H and 6H silicon carbide

Physical Review B, 2004
The hyperfine spectroscopy of neutral muonium impurity centers has been investigated for the two common hexagonal structures of SiC. Paramagnetic spin-precession frequencies obtained in a field of $6\phantom{\rule{0.3em}{0ex}}\mathrm{T}$ applied parallel to the $c$-axis identify two atomiclike ${\mathrm{Mu}}^{0}$ centers in 4H-SiC and a total of $4 ...
R. L. Lichti, W. A. Nussbaum, K. H. Chow
openaire   +1 more source

Admittance Spectroscopy of 6H, 4H, and 15R Silicon Carbide

physica status solidi (a), 1997
By analyzing the temperature dependence of the capacitance and AC conductance of a zero-biased Schottky diode one obtains the activation energy of the primary shallow dopant in a semiconductor. This technique has become known as Thermal Admittance Spectroscopy.
S. R. Smith, A. O. Evwaraye, W. C. Mitchel   +2 more
openaire   +1 more source

Incomplete ionization in aluminum-doped 4H-silicon carbide

Journal of Applied Physics, 2019
In this work, we investigate the degree of incomplete ionization of Al doped 4H-SiC. In particular, we perform analysis on a comprehensive list of published measurements of ionization energy, resistivity, and Hall mobility for varying Al concentration.
C. Darmody, N. Goldsman
openaire   +1 more source

Surface roughening in ion implanted 4H-silicon carbide

Journal of Electronic Materials, 1999
Silicon carbide (SiC) devices have the potential to yield new components with functional capabilities that far exceed components based on silicon devices. Selective doping of SiC by ion implantation is an important fabrication technology that must be completely understood if SiC devices are to achieve their potential.
M. A. Capano, S. Ryu, J. A. Cooper, M. R. Melloch, K. Rottner, S. Karlsson, N. Nordell, A. Powell, D. E. Walker   +8 more
openaire   +1 more source

Piezoresistive 4H-Silicon Carbide (SiC) pressure sensor

2021 IEEE Sensors, 2021
Piotr Mackowiak, Kolja Erbacher, Manuel Baeuscher, Michael Schiffer, Klaus-Dieter Lang, Martin Schneider-Ramelow, Ha-Duong Ngo   +6 more
openaire   +1 more source

Planar edge termination for 4H-silicon carbide devices

IEEE Transactions on Electron Devices, 1996
In this paper, it is demonstrated that the edge termination for 6H-SiC based upon self-aligned implantation of a neutral species on the edges of devices to form an amorphous layer can also be applied to 4H-SiC inspite of differences in their band structures.
D. Alok, R. Raghunathan, B.J. Baliga
openaire   +1 more source

Thermal effects on the dynamics of 4H-silicon carbide MOSFETs

IECEC 96. Proceedings of the 31st Intersociety Energy Conversion Engineering Conference, 2002
Silicon carbide (SiC) devices are envisaged to play a major role in the development of integrated power systems and aircraft electric systems as required by the Department of Defense's (DOD) More Electric initiative (MEI) and the More Electric Engines (MEE) program.
M. Vichare, M. Kazimierczuk, M.L. Ramalingam, L. Tolkinnen, K. Reinhardt, M.M. Marciniak   +5 more
openaire   +1 more source

Design and fabrication of 4H silicon carbide MOSFETS

2009
The 4H-SiC power MOSFET is an excellent candidate for power applications. Major technical difficulties in the development of 4H-SiC power MOSFET have been low MOS channel mobility and gate oxide reliability. In this dissertation, a novel 4H-SiC power MOSFET structure has been presented with the aim of solving these problems.
openaire   +1 more source