Results 171 to 180 of about 637,262 (217)

Dislocation nucleation in 4H silicon carbide epitaxy

Journal of Crystal Growth, 2004
Abstract The dislocation nucleation during 4H silicon carbide homoepitaxy has been investigated using chemical etching, optical microscopy, atomic force microscopy, and transmission electron microscopy. Threading edge dislocations formed characteristic arrays of etch pit pairs on the epilayer surface, perpendicular to the off-cut direction.
S. Ha, H.J. Chung, N.T. Nuhfer, M. Skowronski   +3 more
openaire   +1 more source

6H- and 4H-silicon carbide for device applications

1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145), 2002
4H- and 6H-SiC crystals with the values of N/sub d/-N/sub a/ from 5 10/sup 18/ cm/sup -3/ to less than 2 10/sup 15/ cm/sup -3/ have been grown. Material with high resistivity is of great importance for high temperature electronics and other severe environment electronics based on silicon carbide as well as nitride-based electronics.
A.S. Bakin, S.I. Dorozhkin, A.S. Zubrilov   +2 more
openaire   +1 more source

Implantation and annealing of aluminum in 4H silicon carbide

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2005
Abstract Aluminum ions with a dose between 1.2 × 10 14  cm −2 and 1.2 × 10 15  cm −2 were implanted into 4H silicon carbide at room temperature, 650 °C, and 800 °C. High temperature furnace and lamp annealing of the implanted samples were investigated with respect to sheet resistance, hole mobility and free hole concentration.
M. Rambach, F. Schmid, M. Krieger, L. Frey, A.J. Bauer, G. Pensl, H. Ryssel   +6 more
openaire   +1 more source

Investigation Of Microplasma Breakdown In 4H Silicon Carbide

MRS Proceedings, 1998
ABSTRACTReverse bias breakdown behaviour of high quality 4H silicon carbide p-n diodes was investigated, using optical and electrical measurement techniques. Most of the sample diodes suffered from early breakdown phenomena in the form of microplasmas at about 80% of the calculated parallel plane breakdown voltage for the diodes, as evident from ...
Uwe Zimmermann, Anders Hallén, Andrey O. Konstantinov, Bo Breitholtz   +3 more
openaire   +1 more source

Defects In 4H Silicon Carbide CVD Epilayers

MRS Proceedings, 1996
AbstractThe characteristic defects of 4H-SiC homoepitaxial thin films grown on bulk substrates using chemical vapor deposition (CVD) are described based on transmission electron microscopy (TEM), atomic force microscopy (AFM) and surface decoration studies. Emphasis is placed on understanding the formation mechanism of surface triangular defects. Cross-
L. Zhou, P. Pirouz, J. A. Powell
openaire   +1 more source

Annealing of Al implanted 4H silicon carbide

Physica Scripta, 2006
Al ions were implanted with multiple energies up to 250 keV at elevated temperatures in n-type 4H SiC epitaxial layers to reach a surface concentration of 1 x 10(20) cm(-3).
A Hallén, A Suchodolskis, J Österman, L Abtin, M Linnarsson   +4 more
openaire   +1 more source

Low frequency noise in 4H silicon carbide

Journal of Applied Physics, 1997
The bulk low frequency noise has been investigated in the 4H silicon carbide polytype. In the temperature range of 300–550 K the noise spectral density S is proportional to f−1.5, where f is the measurement frequency. A very low noise level has been observed for the bulk noise. At 300 K, the Hooge constant α is as small as (2–4)×10−6 at f=20 Hz and α⩽5×
M. E. Levinshtein, S. L. Rumyantsev, J. W. Palmour, D. B. Slater   +3 more
openaire   +1 more source

Selective Generation of V2 Silicon Vacancy Centers in 4H-Silicon Carbide

Nano Letters
The deterministic generation of individual color centers with defined orientations or types in solid-state systems is paramount for advancements in quantum technologies. Silicon vacancies in 4H-silicon carbide (4H-SiC) can be formed in V1 and V2 types.
Yongzhou Xue, Michael Titze, John Mack, Zhaohui Yang, Liang Zhang, Shei S. Su, Zheshen Zhang, Linran Fan   +7 more
openaire   +2 more sources

Dislocation conversion in 4H silicon carbide epitaxy

Journal of Crystal Growth, 2002
Abstract The propagation of basal plane dislocations from off-axis 4H silicon carbide substrates into the homo-epitaxial layers has been investigated using chemical etching, optical microscopy, and transmission electron microscopy (TEM). The etch pit densities of threading edge and basal plane dislocations changed significantly across the epilayer ...
S. Ha, P. Mieszkowski, M. Skowronski, L.B. Rowland   +3 more
openaire   +1 more source

Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide

Materials Science Forum, 2015
The carbon vacancy (VC) is a minority carrier lifetime controlling defect in 4H-SiC and it is formed during high temperature treatment. In this study, we have performed heat treatment on two sets of n-type 4H-SiC epitaxial samples. The first set was isothermally treated at 1850 °C to follow the evolution of VC as a function of time.
Hussein M. Ayedh, Roberta Nipoti, Anders Hallén, Bengt Gunnar Svensson   +3 more
openaire   +3 more sources