Results 1 to 10 of about 38,865 (142)
Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays
Light: Science and Applications, 2021 Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. As a representative III-nitride material, AlGaN alloys have broad development prospects in the field ...
Qing Cai, Haifan You, Hui Guo
exaly +2 more sources
Enhancement of Electro-Optical Characteristics in GaN-Based Ultraviolet Laser Diodes Through Upper Optical Confinement Structure Design [PDF]
NanomaterialsTwo series of laser diodes with different AlGaN cladding layers were investigated, and it was found that the internal absorption loss was reduced by using a u-AlGaN and p-AlGaN composite upper cladding layer, and the performance of LD was improved.
Zhiwei Li +5 more
doaj +2 more sources
Opto-Electronic Advances, 2023 Efficient and eco-friendly disinfection of air-borne human respiratory RNA viruses is pursued in both public environment and portable usage. The AlGaN-based deep ultraviolet (DUV) light-emission diode (LED) has high practical potentials because of its ...
Ke Jiang +10 more
doaj +1 more source
Bezmiâlem Science, 2022 Objective:The aim of this study is to evaluate the efficacy of the Algan Hemostatic Agent (AHA) available in three different physical form (liquid, powder and sponge absorbed) in the femoral artery incision model in rats.Methods:A total of sixty-four 5-7
Hüsamettin EKİCİ +6 more
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Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor
Scientific Reports, 2021 Gate-controlled amplifiable ultraviolet phototransistors have been demonstrated using AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN HEMTs, the dark current between the source and drain increases with
Seung-Hye Baek +3 more
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Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
Opto-Electronic Advances, 2020 We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor.
Kumar Kalapala Akhil Raj +8 more
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Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 Regularities of the reflected signal intensity changing in time, recorded by the detector of the laser interferometer with the operating frequency of 670 nm during the inductively coupled plasma reactive ion etching in a Cl2/N2/O2 atmosphere of GaN, p ...
A. D. Yunik, A. H. Shydlouski
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Effect of the back contact work function on the performance of Al0.1Ga0.9N/CdS/Si solar cell [PDF]
مجلة جامعة الانبار للعلوم الصرفةIn the first phase of this study, a layer of cadmium sulphide (CdS) and a layer of aluminium gallium nitride (Al0.1GaN0.9) was deposited on a silicon substrate (10% AlN with 70% GaN) was deposited on a silicon substrate by using a pulse laser deposition ...
Bashar Saleh
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A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT [PDF]
, 2014 A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced ...
Al-Khalidi, Abdullah +7 more
core +1 more source
Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates
Cumhuriyet Science Journal, 2018 In this work, MOVPE (Metalorganic Vapor PhaseEpitaxy) growth and characterization studies of high Al content AlGaN epilayersare reported. We utilize high resolutionX-ray diffraction (HRXRD) and atomic force microscope (AFM) techniques toanalyze the ...
İlkay Demir
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