Results 91 to 100 of about 38,935 (209)

Variable Temperature-Scanning Hall Probe Microscopy (VT-SHPM) with GaN/AlGaN Two-Dimensional Electron Gas (2DEG) Micro Hall Sensors in 4.2-425K range, Using Novel Quartz Tuning Fork AFM Feedback [PDF]

, 2008
In this report, we present the fabrication and variable temperature (VT) operation of Hall sensors, based on GaN/AlGaN heterostructure with a two-dimensional electron gas (2DEG) as an active layer, integrated with Quartz Tuning Fork (QTF) in atomic ...
Oral, Ahmet
core  

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

AIP Advances, 2016
In this paper, the trap behaviours in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated using transient capacitance measurement. By measuring the transient gate capacitance variance (ΔC) with different pulse height, the gate pulse ...
Bin Dong, Jie Lin, Ning Wang, Ling-li Jiang, Zong-dai Liu, Xiaoyan Hu, Kai Cheng, Hong-yu Yu   +7 more
doaj   +1 more source

Spectroscopic Ellipsometry and Correlated Studies of AlGaN-GaN HEMTs Prepared by MOCVD

Nanomaterials
A series of AlGaN/GaN high-electron-mobility transistor (HEMT) structures, with an AlN thin buffer, GaN thick layer and Al0.25Ga0.75N layer (13–104 nm thick), is prepared by metal–organic chemical vapor deposition and investigated via multiple techniques.
Yanlian Yang, Yao Liu, Yaoze Li, Manika Tun Nafisa, Zhe Chuan Feng, Lianshan Wang, Jeffrey Yiin, Lingyu Wan, Benjamin Klein, Ian Ferguson, Wenhong Sun   +10 more
doaj   +1 more source

Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer

Advanced Photonics Research
The AlGaN materials system has been extensively studied in order to improve the efficiency of UV‐B and UV‐C light‐emitting diodes (LEDs). While progress has been made, significant challenges remain at shorter wavelengths.
Andre Perepeliuc, Rajat Gujrati, Phuong Vuong, Vishnu Ottapilakkal, Thi May Tran, Mohamed Bouras, Ali Kassem, Ashutosh Srivastava, Tarik Moudakir, Gilles Patriarche, Paul Voss, Suresh Sundaram, Jean Paul Salvestrini, Abdallah Ougazzaden   +13 more
doaj   +1 more source

Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy

Nanomaterials, 2018
In this paper, we report the epitaxial growth and material characteristics of AlGaN (Al mole fraction of 10%) on an AlN/nanopatterned sapphire substrate (NPSS) template by hydride vapor phase epitaxy (HVPE).
Chi-Tsung Tasi, Wei-Kai Wang, Sin-Liang Ou, Shih-Yung Huang, Ray-Hua Horng, Dong-Sing Wuu   +5 more
doaj   +1 more source

High Breakdown-Voltage (>2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains

IEEE Journal of the Electron Devices Society, 2018
In this paper, a high breakdown voltage of more than 2200 V in high-electron-mobility transistors (HEMTs) with AlGaN channel and a novel ohmic/Schottky-hybrid drain contact is achieved, which is the record breakdown voltage ever achieved on AlGaN-channel
Weihang Zhang, Jincheng Zhang, Ming Xiao, Li Zhang, Yue Hao   +4 more
doaj   +1 more source

Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility

Advanced Electronic Materials
Ultrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off‐state as well as high temperature stability of the devices in on‐state are required.
Julien Bassaler, Jash Mehta, Idriss Abid, Leszek Konczewicz, Sandrine Juillaguet, Sylvie Contreras, Stéphanie Rennesson, Sebastian Tamariz, Maud Nemoz, Fabrice Semond, Julien Pernot, Farid Medjdoub, Yvon Cordier, Philippe Ferrandis   +13 more
doaj   +1 more source

The Dynamic Modulation Doping Effect of Gas Molecules on an AlGaN/GaN Heterojunction Surface

Nanomaterials
AlGaN/GaN high-electron-mobility transistors (HEMTs) are widely used in high-frequency and high-power applications owing to the high two-dimensional electron gas (2DEG) concentration. However, the microscopic origin of the 2DEG remains unclear.
Ying Ma, Lin Shi, Liang Chen, Cai Chen, Yifang Hong, Hua Qin, Xiaodong Zhang, Yi Cui, Hongzhen Lin, Zhiqun Cheng, Fan Zhang, Linfeng Mao, Yong Cai   +12 more
doaj   +1 more source

Liquid-Metal-Enabled Synthesis of Aluminum-Containing III-Nitrides by Plasma-Assisted Molecular Beam Epitaxy

, 2016
Nitride films are promising for advanced optoelectronic and electronic device applications. However, some challenges continue to impede development of high aluminum-containing devices.
Liang, Yu-Han, Nuhfer, T., Towe, Elias
core  

AlGaN/GaN HFET’S

, 2001
The strong spontaneous and piezoelectric polarizations in pseudomorphic AlGaN/GaN on SiC substrates are used to induce 2DEG sheet density of > 1 x 10 13 /cm 2 with mobility up to 1,700 cm 2 /vs. The processing sequence and HEMT electrode layout are presented.
openaire   +2 more sources