Results 101 to 110 of about 38,935 (209)

Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

AIP Advances, 2016
The current transport mechanism of graphene formed on AlxGa1−xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current–voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying
Bhishma Pandit, Tae Hoon Seo, Beo Deul Ryu, Jaehee Cho   +3 more
doaj   +1 more source

European Governance and Democratic Legitimacy of EU Legislation Formation

Journal of Business Administration and Social Studies
The basic of governance approach that is used after the 1990s as a new public administration model is public participation in public policies and government.
Müge Algan
doaj   +1 more source

Measurement of electrostatic fields in Ge-doped AlGaN structures by off-axis electron holography [PDF]

BIO Web of Conferences
Palais Alexis, Cooper David, Monroy Eva, Hyot Bérangère   +3 more
doaj   +1 more source

Hybrid High-Power AlGaN/CdZnO/GaN/AlGaN HEMT with High Breakdown Voltage

Materials
This study investigates the effects of incorporating a CdZnO layer in place of the conventional InGaN layer in an AlGaN/InGaN/GaN/AlGaN/SiC high-electron mobility transistor (HEMT) structure. We examine the resulting characteristics and assess the potential of high-power HEMT applications, including high-power switching converters, through simulation ...
Bonghwan Kim, Seung-Hwan Park
openaire   +2 more sources

2 dimensional electron gas uniformity of GaN HFET layers on SiC [PDF]

, 2012
Koker, L, Martin, T, Soley, D E J, Uren, M J, Wallis, D J, Wright, P J   +5 more
core   +1 more source

Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]

ACS Appl Electron Mater
Kim DW, Kim B, Cho Y, Kim S, Gong Y, Baek Y, Bae B, Noh YK, Bae S, Park DH, Lee K.   +10 more
europepmc   +1 more source

Impact of Carbon Diffusion Induced Stress on the Properties of Diamond/GaN Heterojunctions. [PDF]

Nanomaterials (Basel)
Sun H, Wu M, Xu P, Yuan C, Yang L, Lu H, Hou B, Zhang M, Ma X, Hao Y.   +9 more
europepmc   +1 more source

Highly Sensitive Room-Temperature Graphene-Modulated AlGaN/GaN HEMT THz Detector Architecture. [PDF]

Sensors (Basel)
Sengupta R, Sarusi G.
europepmc   +1 more source

SIMS Investigation of Al Diffusion Across Interfaces in AlGaN/GaN and AlN/GaN Heterostructures. [PDF]

Nanomaterials (Basel)
Laifi J, Hasaneen MF, Bchetnia A.
europepmc   +1 more source

Auger Electron Spectroscopy for Chemical Analysis of Passivated (Al,Ga)N-Based Systems. [PDF]

Micromachines (Basel)
Domanowska A, Adamowicz B.
europepmc   +1 more source