III-Nitride MEMS drum resonators on flexible metal substrates. [PDF]
Kassem A +13 more
europepmc +1 more source
Enhanced Efficiency and Reliability of AlGaN UVC-LED with Tapered Hole Injection Layer. [PDF]
Xu L +5 more
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Recent Advances in Diamond-Capped GaN HEMTs for RF Application. [PDF]
Xiang Y +12 more
europepmc +1 more source
Influence of LPCVD-Si<sub>3</sub>N<sub>4</sub> Thickness on Polarization Coulomb Field Scattering in AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. [PDF]
Jiang G +8 more
europepmc +1 more source
Effect of AlN Cap Layer on Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field Effect Transistor. [PDF]
Cheng Q +9 more
europepmc +1 more source
Making UV light visible by exciting polarization-gate phototransistor to achieve energy transfer into GaN-based blue emission. [PDF]
Chu C +7 more
europepmc +1 more source
Infrared Near-Field Spectroscopy of AlGaN/GaN Heterostructures for Probing Two-Dimensional Electron Gas. [PDF]
Bisignano I +5 more
europepmc +1 more source
Effects of Switching on the 2-DEG Channel in Commercial E-Mode GaN-on-Si HEMT. [PDF]
Baca-Arroyo R.
europepmc +1 more source
Localized Electric Field Tailoring to Balance Voltage Reliability, Current Density, and High-Frequency Performance of AlGaN/GaN HEMTs. [PDF]
Wang Y +6 more
europepmc +1 more source
Fowler-Nordheim Tunneling in AlGaN MIS Heterostructures with Atomically Thin <i>h</i>-BN Layer Dependence and Performance Limits. [PDF]
Zhang J +6 more
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