Results 151 to 160 of about 38,935 (209)

Defect Reduction in HEMT Epilayers on SiC Meta-Substrates. [PDF]

Nanomaterials (Basel)
Su VC, Wei TY, Chen MH, Ku CT, Liu GS.
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High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact. [PDF]

Micromachines (Basel)
Du J, Lu H, Hou B, Yang L, Zhang M, Wu M, Chen K, Pan T, Chen Y, Liu H, Chang Q, Ma X, Hao Y.   +12 more
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Recent Progress of Ion Implantation Technique in GaN-Based Electronic Devices. [PDF]

Micromachines (Basel)
Lu H, Hao X, Zhang Y, Yang L, Hou B, Zhang M, Wu M, Ma X, Hao Y.   +8 more
europepmc   +1 more source

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High-reflectivity ultraviolet AlGaN∕AlGaN distributed Bragg reflectors

Applied Physics Letters, 2006
We demonstrate high-reflectivity crack-free Al0.18Ga0.82N∕Al0.8Ga0.2N distributed Bragg reflectors (DBR) for the spectral region around 350nm grown by molecular-beam epitaxy on thick GaN templates. The structural quality of the DBR layers is maintained by compensating the compressive and tensile stress in each λ∕4 pair.
Mitrofanov, Oleg, Schmult, Stefan, Manfra, Michael J., Siegrist, Theo M., Weimann, Nils, Sergent, Arthur Michael, Molnar, Richard J.   +6 more
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AlGaN/GaN/AlGaN ultraviolet photodetectors on Si

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), 2005
AlGaN/GaN/AlGaN ultraviolet photodetectors were grown on Si [111] substrates using an AlN buffer by metalorganic chemical vapor deposition. These detectors showed a high response in a narrow range of wavelength with a peak position at 365 nm. A peak responsivity of 24 A/W was obtained at 5.5 V bias.
R.L. Jiang, Z.M. Zhao, P. Chen, D.J. Xi, B. Shen, R. Zhang, Y.D. Zheng   +6 more
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AlGaN Nanocolumns and AlGaN/GaN/AlGaN Nanostructures Grown by Molecular Beam Epitaxy

physica status solidi (b), 2002
This work reports on the characterization of hexagonal, single crystal AlGaN nanocolumns with diameters in the range of 30 to 100 nm grown by molecular beam epitaxy on Si(111) substrates. The change of the flux ratio between the Al and the total III-element controls the alloy composition.
J. Risti?, M.A. S�nchez-Garc�a, J.M. Ulloa, E. Calleja, J. Sanchez-P�ramo, J.M. Calleja, U. Jahn, A. Trampert, K.H. Ploog   +8 more
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Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells

Applied Physics Letters, 1990
AlxGa1−xN-GaN quantum wells were grown on basal plane sapphire by low-pressure metalorganic vapor deposition. The photoluminescence spectra of samples of different well thicknesses and x values were measured. The experimental data were compared with the calculated solutions of the finite square quantum well and the bound states involved in the optical ...
M. A. Khan, R. A. Skogman, J. M. Van Hove, S. Krishnankutty, R. M. Kolbas   +4 more
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AlGaN/GaN heterostructures on insulating AlGaN nucleation layers

Applied Physics Letters, 1999
A single temperature process using AlGaN nucleation layers has been developed that produces device-quality, GaN-based materials with bilayer step surfaces. The AlGaN nucleation layer is deposited by flow modulation organometallic vapor phase epitaxy at temperatures in excess of 1000 °C, where GaN and AlGaN films can be subsequently grown.
Smart, Joseph A., Schremer, Alfred T., Weimann, Nils, Ambacher, Oliver, Eastman, Lester F., Shealy, James Richard   +5 more
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Optical characterization of AlGaN-GaN-AlGaN quantum wells

Journal of Electronic Materials, 1992
High quality AL x Ga1−x N-GaN-Al x Ga1−x N quantum wells of different thicknesses andx values were grown by low pressure metalorganic chemical vapor deposition (LPMOCVD).
S. Krishnankutty, R. M. Kolbas, M. A. Khan, J. N. Kuznia, J. M. Van Hove, D. T. Olson   +5 more
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