Results 161 to 170 of about 38,935 (209)

Modulation-doped superlattice AlGaN barrier GaN/AlGaN HFETs

Journal of Crystal Growth, 2004
For nitride heterojunction field-effect transistors, the heterojunction forming the electron barrier has to be designed based on trade-offs between lattice mismatch, two-dimensional electron gas concentration, and alloy scattering. In this work, we study the use of a superlattice-based barrier which effectively increases the heterojunction barrier ...
Uttiya Chowdhury, Raymond K. Price, Michael M. Wong, Dongwon Yoo, Xuebing Zhang, Milton Feng, Russell D. Dupuis   +6 more
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Fabrication and characterization of N-face AlGaN/GaN/AlGaN HEMTs

63rd Device Research Conference Digest, 2005. DRC '05., 2005
The paper reports on the characteristics of N-face AlGaN/GaN/AlGaN HEMTs. Ohmic contact optmization experiments based on the Ti/Al/Ni/Au metallization scheme commonly used for Ga-face AlGaN/GaN HEMTs were carried out and a low contact resistance of 1.3 Ohm/mm was achieved. The devices were then characterized before and after SiN passivation.
CHINI, Alessandro, Rajan, S., Wong, M., Fu, Y., Speck, J. S., Mishra, U. K.   +5 more
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Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer

Journal of Alloys and Compounds, 2013
Abstract This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the channel back-barrier caused by polarization-induced electric field in GaN provides better ...
Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang   +9 more
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Numerical investigation on AlGaN/GaN short channel HEMT with AlGaN/InGaN/AlGaN quantum well plate

Superlattices and Microstructures, 2018
Abstract A short channel AlGaN/GaN HEMT with AlGaN/InGaN/AlGaN quantum well plate is proposed and investigated. Benefited by the 2DEG confining effect and plated-like function, the QWP-HEMT exhibits weaker short channel effects and stronger reverse blocking, where in maximum the DIBL reduction and the critical electric field improvement are 88.9% and
Zeheng Wang, Jun Cao, Ruize Sun, Fangzhou Wang, Yuanzhe Yao   +4 more
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Polarized Photoluminescence Study on AlGaN of AlGaN/GaN Heterostructure

MRS Proceedings, 2005
AbstractOptical properties of tensile strained AlxGa1-xN films of AlxGa1-xN/GaN heterostructures grown on sapphire were investigated by using polarization-resolved photoluminescence spectroscopy. Emissions from AlxGa1-xN with polarization of E//c and E⊥c were obtained at different peak energies.
Sachio Kitagawa, Kenichi kosaka, Tadayoshi Tuchiya, Akira Suzuki, Tsutomu Araki, Yasushi Nanishi   +5 more
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Magnetotransport in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

physica status solidi (b), 2007
AbstractTwo‐dimensional electron gas transport in AlN/GaN and AlGaN/GaN heterostructures has been investigated employing geometrical magnetoresistance measurements and quantitative mobility‐spectrum analysis. The channel magnetoresistance of ungated four‐terminal test structures, with an effective width to length ratio of 10, was measured using pulsed ...
G. A. Umana‐Membreno, G. Parish, B. D. Nener, D. Buttari, S. Keller, U. K. Mishra   +5 more
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Advantages of deep-UV AlGaN light-emitting diodes with an AlGaN/AlGaN superlattices electron blocking layer

Applied Physics A, 2015
In this work, the AlGaN/AlGaN superlattices (SLs) electron blocking layer (EBL) is designed to replace conventional AlGaN EBL in the AlGaN-based deep-UV light-emitting diodes (DUV-LEDs). The simulation results show that the DUV-LEDs with SLs possess higher emission power and internal quantum efficiency as compared to those with conventional EBL, which ...
Yi An Yin, Naiyin Wang, Shuti Li, Yong Zhang, Guanghan Fan   +4 more
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Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers

Journal of Crystal Growth, 2013
Abstract High electron mobility transistors (HEMTs) structures with GaN, Al0.025Ga0.975N and Al0.04Ga0.96N high resistivity (HR) buffers were grown on sapphire by metal organic chemical vapor deposition (MOCVD). The structural and electrical properties of these three samples were investigated and compared. By increasing Al composition of AlGaN buffer,
Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang   +9 more
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Graded AlGaN/AlGaN Superlattice Insert Layer Improved Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Journal of Display Technology, 2016
An Al composition graded superlattice AlGaN/AlGaN layer was adopted in AlGaN-based deep ultraviolet light-emitting diodes as a hole reserving layer and relieved the strain between the last quantum barrier and the AlGaN electron blocking layer. The simulation shows that the light output power and internal quantum efficiency of the newly structure are ...
Shanlin Wang, Yi An Yin, Huaimin Gu, Naiyin Wang, Li Liu   +4 more
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Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrate

Applied Physics Express, 2014
A low-temperature (LT) AlGaN interlayer is inserted in the Al0.1Ga0.9N back barrier layer of an Al0.2Ga0.8N/GaN/Al0.1Ga0.9N double heterostructure grown on a 150 mm Si substrate. It is found that the 21-nm-thick LT-AlGaN interlayer plays an important role in stress relaxation and dislocation reduction of the Al0.1Ga0.9N back barrier layer, especially ...
Yu-Lin Hsiao, Yi-Jie Wang, Chia-Ao Chang, You-Chen Weng, Yen-Yu Chen, Kai-Wei Chen, Jer-Shen Maa, Edward Yi Chang   +7 more
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