Results 171 to 180 of about 38,935 (209)
Some of the next articles are maybe not open access.
Well-width-dependent carrier lifetime in AlGaN∕AlGaN quantum wells
Applied Physics Letters, 2007A set of Al0.35Ga0.65N∕Al0.49Ga0.51N multiple quantum wells (MQWs) with fixed barrier width and well widths varying from 1.65to5.0nm has been grown by metal-organic chemical vapor deposition. Carrier dynamics in the MQWs were studied using time-resolved photoluminescence (PL) spectroscopy and light-induced transient grating (four wave mixing) technique.
J. Mickevičius +6 more
openaire +1 more source
Growth and characterization of AlGaN/GaN/AlGaN field effect transistors
physica status solidi c, 2010AbstractField effect transistors (FETs) on both GaN and AlGaN buffers were grown and compared. Development of high quality AlGaN is the key to obtain high performance AlGaN buffer FETs. An optimized Al0.04Ga0.96N layer on SiC substrate had (002) and (201) X‐ray rocking curves with full wide at half maximum (FWHM) of 140 and 450 arc sec, respectively ...
Z. Chen +9 more
openaire +1 more source
Efficiency droop in high‐Al‐content AlGaN/AlGaN quantum wells
physica status solidi c, 2011AbstractExcitation power density dependence of photoluminescence (PL) efficiency is studied in the temperature range from 8 to 300 K for AlGaN multiple quantum well structures containing quantum wells of different width. PL efficiency droop is observed and dependence of the droop effect on the well width and lattice temperature is discussed ...
G. Tamulaitis +6 more
openaire +1 more source
Carrier dynamics in wide‐band‐gap AlGaN/AlGaN quantum wells
physica status solidi c, 2008AbstractCarrier dynamics in a set of AlGaN/AlGaN multiple quantum wells (MQWs) has been investigated. High‐Al‐content MQWs with well widths varying from 1.65 to 5.0 nm and fixed barrier width were grown by metal‐organic chemical vapor deposition. Time‐resolved photoluminescence (PL) and light‐induced transient grating technique were used to study ...
G. Tamulaitis +6 more
openaire +1 more source
Phonon Modes in AlGaN Alloy with AlGaN/GaN MQW Interlayer
Advanced Materials Research, 2011500nm AlGaN thick layer with AlGaN/GaN MQW interlayer was grown on sapphire substrate for UV detector and resonant tunneling diodes by MOCVD equipment. We were strongly interesting in the stress information of QW. There are a big mismatch of lattice between AlN and GaN.The growth of thick and high quality AlGaN is difficult task.
Jin Zhou +4 more
openaire +1 more source
High quality UV AlGaN/AlGaN distributed Bragg reflectors and microcavities
SPIE Proceedings, 2007ABSTRACT We demonstrate high-reflectivity crack-free Al 0.18 Ga 0.82 N/Al 0.8 Ga 0.2 N distributed Bragg reflectors (DBR) and monolithic microcavities grown by molecular beam epitaxy on thick c-axis GaN templates. The elastic strain energy in the epilayer is minimized by compensating the compressive and tensile stress in every period of the DBR ...
Mitrofanov, Oleg +6 more
openaire +2 more sources
Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures
Journal of Applied Physics, 2001The pseudodielectric function spectra 〈ε〉 of wurtzite GaN, AlGaN, and GaN/AlGaN heterostructures were determined for photon energies ranging from 2 to 5 eV, using variable angle spectroscopic ellipsometry (SE). Samples were grown by low-pressure metalorganic chemical vapor deposition on c-plane sapphire substrates.
J. Wagner +5 more
openaire +1 more source
2016
During the development of semiconductor science and technology, Si and Ge were the first-generation semiconductor material, while GaAs, InP are known as the second-generation semiconductor material. In recent years, rapid developments have occurred in GaN and related materials (including AlN, AlGaN, GaN, InGaN, and InN), thus becoming the third ...
Li He, Dingjiang Yang, Guoqiang Ni
openaire +1 more source
During the development of semiconductor science and technology, Si and Ge were the first-generation semiconductor material, while GaAs, InP are known as the second-generation semiconductor material. In recent years, rapid developments have occurred in GaN and related materials (including AlN, AlGaN, GaN, InGaN, and InN), thus becoming the third ...
Li He, Dingjiang Yang, Guoqiang Ni
openaire +1 more source
2014 IEEE International Conference on Semiconductor Electronics (ICSE2014), 2014
A novel AlGaN/GaN/AlGaN double-heterostructure field effect transistor (DH-FET) structure with an inserted LT-AlGaN interlayer grown on 150 mm Si substrate has been studied. The DH-FET structure has been characterized by transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS) and X-ray diffraction (XRD).
Yu-Lin Hsiao +2 more
openaire +1 more source
A novel AlGaN/GaN/AlGaN double-heterostructure field effect transistor (DH-FET) structure with an inserted LT-AlGaN interlayer grown on 150 mm Si substrate has been studied. The DH-FET structure has been characterized by transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS) and X-ray diffraction (XRD).
Yu-Lin Hsiao +2 more
openaire +1 more source
Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure
Journal of Crystal Growth, 2001Abstract We have studied the effect of a low-temperature-deposited (LT-) AlGaN interlayer on AlGaN/GaN heterostructure. High-crystalline-quality and crack-free AlGaN layers covering the entire compositional range were realized using the LT-AlN interlayer.
Satoshi Kamiyama +8 more
openaire +1 more source