Results 11 to 20 of about 38,935 (209)

On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes [PDF]

Nanoscale Research Letters, 2018
In this report, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with different p-AlGaN/n-AlGaN/p-AlGaN (PNP-AlGaN) structured current spreading layers have been described and investigated.
Jiamang Che, Chunshuang Chu, Kangkai Tian, Jianquan Kou, Hua Shao, Yonghui Zhang, Wengang Bi, Zi-Hui Zhang   +7 more
doaj   +3 more sources

Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]

Adv Sci (Weinh)
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Liu F, Xue J, Wu G, Yuan J, Yao J, Liu R, Guo Z, Li Z, Hu H, Sun W, Zhao C, Zhang C, Liu X, Zhang K, Zhang J, Hao Y.   +15 more
europepmc   +2 more sources

Deep Ultraviolet AlGaN-Based Light-Emitting Diodes with p-AlGaN/AlGaN Superlattice Hole Injection Structures [PDF]

Processes, 2021
The p-AlGaN/AlGaN superlattice (SL) hole injection structure was introduced into deep ultraviolet (DUV) light-emitting diodes (LEDs) to enhance their performances. The period thicknesses of the p-Al0.8Ga0.2N/Al0.48Ga0.52N SLs affected the performances of the DUV LEDs.
Tien-Yu Wang, Wei-Chih Lai, Syuan-Yu Sie, Sheng-Po Chang, Cheng-Huang Kuo, Jinn-Kong Sheu   +5 more
openaire   +1 more source

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs [PDF]

Scientific Reports, 2017
AbstractSingle crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT).
Tzu-Hsuan Chang, Kanglin Xiong, Sung Hyun Park, Ge Yuan, Zhenqiang Ma, Jung Han   +5 more
openaire   +3 more sources

AlGaN quadruple-band photodetectors [PDF]

2009 IEEE LEOS Annual Meeting Conference Proceedings, 2009
Quadruple back-illuminated ultraviolet metal-semiconductor-metal photodetectors with four different spectral responsivity bands were demonstrated. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 9.98 nm.
Gokkavas, Mutlu, Butun, Serkan, Caban, Piotr, Strupinski, Wlodek, Ozbay, Ekmel   +4 more
openaire   +3 more sources

Wafer Scale III-Nitride Deep-Ultraviolet Vertical-Cavity Surface-Emitting Lasers Featuring Nanometer-Class Control of Cavity Length. [PDF]

Adv Sci (Weinh)
A DUV‐VCSEL strategy featuring the nanometer‐class control of the cavity length is proposed in the DUV optoelectronic framework based on GaN templates. After the sapphire removal, a self‐terminated etching technology is developed, whereby the cavity length can be accurately determined by epitaxy instead of the fabrication process. As such, a record low
Ji C, Wang J, Xu F, Zhang L, Lang J, Zhang Z, Tan F, Ji C, Zhang J, Zhang E, Kang X, Qin Z, Ju G, Wu J, Yang X, Tang N, Wang X, Ge W, Shen B.   +18 more
europepmc   +2 more sources

Graphene/AlGaN/GaN RF Switch [PDF]

Micromachines, 2021
RF switches, which use a combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system, were proposed and studied in the frequency band from 10 MHz to 114.5 GHz. The switches were integrated into the coplanar waveguide, which allows them to be used in any system without the use of, e.g., bonding, flip-chip and ...
Yevhen Yashchyshyn, Paweł Bajurko, Jakub Sobolewski, Pavlo Sai, Aleksandra Przewłoka, Aleksandra Krajewska, Paweł Prystawko, Maksym Dub, Wojciech Knap, Sergey Rumyantsev, Grzegorz Cywiński   +10 more
openaire   +3 more sources

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [PDF]

Nanoscale Research Letters, 2014
In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a ...
Lee, Ya-Ju, Yao, Yung-Chi, Huang, Chun-Ying, Lin, Tai-Yuan, Cheng, Li-Lien, Liu, Ching-Yun, Wang, Mei-Tan, Hwang, Jung-Min   +7 more
openaire   +3 more sources

Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt and Ni based gate stacks [PDF]

, 2017
In this work, we report the performance of 3 μm gate length "dual barrier„ InAlN/AlGaN/GaN HEMTs on Si substrates with gate-drain contact separations in the range 4-26 μm.
Cho, Sung-Jin, Floros, Konstantinos, Guiney, Ivor, Hemakumara, Dilini, Humphreys, Colin J., Li, Xu, Moran, David A.J., Thayne, Iain G., Wallis, David J., Wasige, Edward   +9 more
core   +1 more source

Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT

Crystals, 2023
This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. AlGaN/GaN heterostructure was grown on sapphire substrate. Prior to the growth of the AlGaN layer, the GaN
Yusnizam Yusuf, Muhammad Esmed Alif Samsudin, Muhamad Ikram Md Taib, Mohd Anas Ahmad, Mohamed Fauzi Packeer Mohamed, Hiroshi Kawarada, Shaili Falina, Norzaini Zainal, Mohd Syamsul   +8 more
doaj   +1 more source