Results 21 to 30 of about 38,935 (209)
Application of Cl2/BCl3/Ar Plasma Treatment in the Improvement of Ti/Al/Mo/Au Ohmic Contacts
Advances in Electrical and Electronic Engineering, 2016 Significant improvement of Ti/Al/Mo/Au ohmic contacts deposited on previously Cl2/BCl3/Ar plasma treated surface was observed. The standard deviation of contact resistance was crucially reduced due to the incorporation of Cl2/BCl3/Ar plasma treatment ...
Jacek Gryglewicz +4 more
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Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties [PDF]
, 2019 This work presents a systematic study of stress and strain of AlxGa1-xN/AlN with composition ranging from GaN to AlN, grown on a c-plane sapphire by metal-organic chemical vapor deposition, using synchrotron radiation high-resolution X-ray diffraction ...
Chung, T. F. +7 more
core +3 more sources
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019 We have presented the results of terahertz time-domain spectroscopy measurements and a rigorous electrodynamic modeling of the optical characteristics of grating-based AlGaN/GaN plasmonic structures with low-doped two-dimensional electron gas in the ...
V.V. Korotyeyev
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Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors
Nanomaterials, 2022 The spectral response properties of AlGaN Schottky barrier detectors with different Al content were investigated. It was found that the responsivity of AlGaN detectors decreases with increase in Al content in AlGaN.
Yujie Huang +6 more
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Comparative Modelling and Thermal Analysis of AlGaN/GaN Power Devices
Journal of Low Power Electronics and Applications, 2021 The use of Aluminum Gallium Nitride (AlGaN) as a power switching device material has been a promising topic of research in recent years. Along with Silicon Carbide (SiC) and Gallium Nitride (GaN), AlGaN is categorized as a Wideband Gap (WBG) material ...
Mahesh B. Manandhar, Mohammad A. Matin
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Effect of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability [PDF]
, 2012 The effect of gate shape and its necessary fabrication process on the reliability of AlGaN/GaN high electron mobility transistors (HEMT) was studied on devices fabricated on the same wafer, using DC and pulsed HEMT analysis.
Arehart +24 more
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Role of inserting an InGaN strain release interlayer in AlGaN growth
Results in Physics, 2023 AlGaN grown on a GaN template usually suffers tensile stress, and the accumulated tensile stress may cause formation of cracks. In this paper, a method to reduce the tensile stress during AlGaN growth by inserting an InGaN interlayer is proposed ...
Zhenzhuo Zhang +5 more
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Significant Phonon Drag Enables High Power Factor in the AlGaN/GaN Two-Dimensional Electron Gas [PDF]
, 2019 In typical thermoelectric energy harvesters and sensors, the Seebeck effect is caused by diffusion of electrons or holes in a temperature gradient. However, the Seebeck effect can also have a phonon drag component, due to momentum exchange between charge
Boone, Derrick +8 more
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Thermal Field Analysis for New AlGaN/GaN HEMT With Partial Etched AlGaN Layer
IEEE Journal of the Electron Devices Society, 2020 In order to explore the distribution of the device temperature field, this paper takes the new AlGaN/GaN HEMT with partial etched AlGaN layer as the research object. First, the ISE TCAD software is used to simulate the temperature field of AlGaN/GaN HEMT
Baoxing Duan +3 more
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Quantum Channel AlGaN/GaN/AlGaN High Electron Mobility Transistor
, 2023 Scaling down the GaN channel in a double heterostructure AlGaN/GaN/AlGaN High Electron Mobility Transistor (HEMT) to the thicknesses on the order of or even smaller than the Bohr radius confines electrons in the quantum well even at low sheet carrier densities. In contrast to the conventional designs, this Quantum Channel (QC) confinement is controlled
Simin, G., Shur, M.
openaire +2 more sources