Results 31 to 40 of about 38,935 (209)
IEEE Photonics Journal, 2021 Herein, we investigate the influence of an AlGaN metasurface on AlGaN-based deep-ultraviolet light-emitting diodes' light-extraction efficiency by utilizing the 3D finite-difference time-domain method.
Joosun Yun, Hideki Hirayama
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Energy levels in polarization superlattices: a comparison of continuum strain models [PDF]
, 2003 A theoretical model for the energy levels in polarization superlattices is presented. The model includes the effect of strain on the local polarization-induced electric fields and the subsequent effect on the energy levels.
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Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
APL Photonics, 2023 Microcavity polaritons are strongly interacting hybrid light–matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonators based on GaN/AlGaN slab waveguides, with experiments carried out from 4 K up to room temperature.
Delphan, A. +9 more
openaire +4 more sources
Nanoscale Research Letters, 2019 In this report, we locally modulate the doping type in the n-AlGaN layer by proposing n-AlGaN/p-AlGaN/n-AlGaN (NPN-AlGaN)-structured current spreading layer for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). After inserting a thin p-AlGaN
Jiamang Che +8 more
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Insights Into the Two-Dimensional MoS2 Grown on AlGaN(GaN) Substrates by CVD Method
IEEE Photonics Journal, 2021 Two-dimensional (2D) MoS2 was grown on AlGaN(GaN) substrates by chemical vapor deposition (CVD) and 2D-3D MoS2-AlGaN(GaN) heterostructures were formed. The MoS2 crystal on AlGaN surface has a mixed and irregular shape including single and multiple layers,
Guofeng Yang +8 more
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Intentionally Carbon-Doped AlGaN/GaN HEMTs:Necessity for Vertical Leakage Paths [PDF]
, 2014 Dynamic ON-resistance (RON) in heavily carbon doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region.
Caesar, Markus +6 more
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IEEE Photonics Journal, 2016 Remarkably enhanced light emission efficiency of AlGaN multiple quantum wells (MQWs) was realized by growing on an n-AlGaN underlying layer (UL). The parasitic peaks emitting from inactive regions can be effectively suppressed, and the nonradiative ...
Lei Li +3 more
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Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements [PDF]
, 2013 The location of the time dependent degradation in OFF-state stressed AlGaN/GaN high electron mobility transistors is studied using low frequency 1/f noise measurements, with additional electroluminescence analysis.
Denis Marcon +5 more
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Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
Scientific Reports, 2017 A GaN/AlGaN ultraviolet light emitting diode (UV-LED) structure with a porous AlGaN reflector structure has been demonstrated. Inside the UV-LED, the n+-AlGaN/undoped-AlGaN stack structure was transformed into a porous-AlGaN/undoped-AlGaN stack structure
Feng-Hsu Fan +9 more
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, 2018 The light output of deep ultraviolet (UV-C) AlGaN light-emitting diodes (LEDs) is limited due to their poor light extraction efficiency (LEE). To improve the LEE of AlGaN LEDs, we developed a fabrication technology to process AlGaN LEDs grown on SiC into
Albadri, Abdulrahman +9 more
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