Results 51 to 60 of about 38,935 (209)

Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao, Sikandar Aftab, Zeeshan Ali, Muhammad Farooq Khan, Ghazanfar Nazir, Awais Khalid, Hosameldin Helmy Hegazy, Ibrahim S. Yahia, Altaf Hussain Rajpar, Burragoni Sravanthi Goud, Jae Hong Kim, Erdi Akman, Xin Li   +12 more
wiley   +1 more source

The Time Response of a Uniformly Doped Transmission-Mode NEA AlGaN Photocathode Applied to a Solar-Blind Ultraviolet Detecting System

Photonics
Due to the excellent quantum conversion and spectral response characteristics of the AlGaN photocathode, it has become the most promising III-V group semiconductor photocathode in solar-blind signal photoconversion devices in the ultraviolet band. Herein,
Jinjuan Du, Xiyao Li, Tiantian Jia, Hongjin Qiu, Yang Li, Rui Pu, Quanchao Zhang, Hongchang Cheng, Xin Guo, Jiabin Qiao, Huiyang He   +10 more
doaj   +1 more source

Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation

AIP Advances, 2023
In this study, the simulations of AlGaN/GaN-based devices, including AlGaN/GaN high electron mobility transistor (HEMT), Al2O3 metal–oxide–semiconductor high electron mobility transistor (MOSHEMT), and SiNx metal–insulator–semiconductor high electron ...
Lilai Jiang, Chengzhen Song, Yu-Ning Wu, Shiyou Chen   +3 more
doaj   +1 more source

A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes

Crystals, 2023
Conventional deep-ultraviolet (UV) light-emitting diodes (LEDs) based on AlGaN crystals have extremely low light-emission efficiencies due to the absorption in p-type GaN anode contacts.
Kengo Nagata, Taichi Matsubara, Yoshiki Saito, Keita Kataoka, Tetsuo Narita, Kayo Horibuchi, Maki Kushimoto, Shigekazu Tomai, Satoshi Katsumata, Yoshio Honda, Tetsuya Takeuchi, Hiroshi Amano   +11 more
doaj   +1 more source

When self-consistency makes a difference [PDF]

, 2008
Compound semiconductor power RF and microwave device modeling requires, in many cases, the use of selfconsistent electrothermal equivalent circuits.
Bonani, Fabrizio, Camarchia, Vittorio, Cappelluti, Federica, Donati Guerrieri, Simona, Ghione, Giovanni, Pirola, Marco   +5 more
core   +1 more source

High‐Throughput Screening of Rare‐Earth Compounds as Promising Deep‐Ultraviolet Light Emitters

Materials Genome Engineering Advances, EarlyView.
A high‐throughput screening of rare‐earth compounds is conducted to identify promising deep‐ultraviolet (DUV) light emitters. With carefully designed selection criteria, Na3LuBr6 and Na3TmBr6 are identified as promising candidates. This study accelerates the development of DUV light emitters.
Xun Xu, Hongzhen Zhong, Hanpu Liang, Baiqing Zhao, Jinshan Li, Xie Zhang   +5 more
wiley   +1 more source

Selective Photosensitive Structures Based On Au-Algan Schottky Barrier

Известия высших учебных заведений России: Радиоэлектроника, 2016
Created and studied selective photosensitive structures based on Au-AlGaN Schottky barrier for the ultraviolet range of the spectrum. The methods of spectrum management photosensitivity by the use of the wide windows and the effects of over-barrier ...
A. S. Evseenkov, I. A. Lamkin, I. I. Mikhailov, A. V. Solomonov, S. A. Tarasov   +4 more
doaj  

Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning

IEEE Journal of the Electron Devices Society, 2019
We have investigated the effect of hot electron stress on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) of hydrogen poisoning.
J. He, Y. Q. Chen, Z. Y. He, Y. F. En, C. Liu, Y. Huang, Z. Li, M. H. Tang   +7 more
doaj   +1 more source

Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer

IEEE Photonics Journal, 2023
AlGaN-based ultraviolet-A light-emitting diodes (UVA LEDs) inevitably suffer from current crowding effects at high injection levels due to their lateral device structure, resulting in non-uniform light emission and device overheating. In N-polar UV LEDs,
Hongchang Tao, Shengrui Xu, Yanrong Cao, Huake Su, Yuan Gao, Yachao Zhang, Jincheng Zhang, Yue Hao   +7 more
doaj   +1 more source

Distorted wurtzite unit cells: Determination of lattice parameters of non-polar a-plane AlGaN and estimation of solid phase Al content

, 2010
Unlike c-plane nitrides, ``non-polar" nitrides grown in e.g. the a-plane or m-plane orientation encounter anisotropic in-plane strain due to the anisotropy in the lattice and thermal mismatch with the substrate or buffer layer.
A. A. Rahman, Amlan Mukherjee, Arnab Bhattacharya, M. R. Gokhale, Masihhur R. Laskar, Nirupam Hatui, Tapas Ganguli   +6 more
core   +1 more source