Results 61 to 70 of about 38,935 (209)
This review focuses on capability of Gallium Nitride (GaN)‐based supercapacitors, bordering the advancement from porous architecture to novel hybrid nanostructures. It systematically investigates synthesis approaches and charge storage mechanisms that generate remarkable energy densities and competent cyclic stability.
Farasat Haider +7 more
wiley +1 more source
Economic anthropologists now carry out fieldwork in settings for which the ethnographic method was never designed, amongst powerful financial actors who are notoriously difficult to access, and in contexts which transcend geographical boundaries. This has engendered a re‐orientation of anthropology, to consider not only the economic lives of people but
Kimberly Chong
wiley +1 more source
The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV) near-resonant Raman scattering.
Yanli Liu +5 more
doaj +1 more source
In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm
Tian-Li Wu +2 more
doaj +1 more source
“Welcome to France.” Can mandatory integration contracts foster immigrant integration?
Abstract European governments, struggling with incorporating diverse immigrant populations, introduced integration contracts. Through language training and compulsory civics courses, these contracts aim to induce new migrants to adopt the host society's culture, respect its values, and improve their labor market outcomes.
Mathilde Emeriau +3 more
wiley +1 more source
The non-polar a -AlGaN epitaxial film was successfully grown on the semi-polar r- sapphire substrate by metal-organic chemical vapor deposition technique.
Abbas Nasir +5 more
doaj +1 more source
Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures [PDF]
The influence of AlGaN and GaN cap layer thickness on Hall sheet carrier density and mobility was investigated for Al0.32Ga0.68N/GaN and GaN/Al0.32Ga0.68N/GaN heterostructures deposited on sapphire substrates. The sheet carrier density was found to increase and saturate with the AlGaN layer thickness, while for the GaN-capped structures it decreased ...
Heikman, S +5 more
openaire +2 more sources
Electoral responses to economic crises
Abstract How do voters respond to economic crises: Do they turn against the incumbent, reward a certain political camp, polarize to the extremes, or perhaps continue to vote much like before? Analyzing extensive data on electorates, parties, and individuals in 24 countries for over half a century, we document a systematic pattern whereby economic ...
Yotam Margalit, Omer Solodoch
wiley +1 more source
Household portfolio allocation and stock market beliefs: Evidence from Japanese households
Abstract We analyze data from the Keio Household Panel Survey (KHPS) to investigate how individuals' beliefs about financial markets influence current and planned asset holdings. Our results reveal statistically and economically significant relations between specific beliefs and both present asset allocations and accumulation.
Raslan Alzuabi, Daniel Gray
wiley +1 more source
A comprehensive investigation of hydrogen grabbing towards the formation of hetero-clusters of AlGaN–H, Si–AlGaN–H, Ge–AlGaN–H, Pd–AlGaN–H, and Pt–AlGaN–H was carried out using DFT computations at the CAM–B3LYP–D3/6-311+G (d,p) level of theory.
Fatemeh Mollaamin, Majid Monajjemi
doaj +1 more source

