Results 111 to 120 of about 9,695,497 (239)

Optoelectronic synapses based on two‐dimensional transition metal dichalcogenides for neuromorphic applications

InfoScience, EarlyView.
This review first introduces the fundamental concepts of artificial synapses and synaptic plasticity, then discusses the device structures and operation mechanisms of optoelectronic synapses based on two‐dimensional transition metal dichalcogenides, highlights their applications in neuromorphic vision systems and computing, and concludes with key ...
Xiaona Sun, Yifan Hu, Chengbao Jiang, Shengxue Yang   +3 more
wiley   +1 more source

Perovskite‐based time‐domain signal‐balancing LiDAR sensor with centimeter depth resolution

InfoMat, EarlyView.
In this study, we present a monolithic high‐speed perovskite‐based photodetector capable of directly sensing the time delay between two light pulses with a temporal resolution of at least 170 ps. This outstanding time resolution is achieved through a signal‐balancing detection scheme that effectively overcomes the limitations of conventional ...
Gebhard J. Matt, Vitalii Bartosh, Joshua R. S. Lilly, Vincent J.‐Y. Lim, Lorenzo J. A. Ferraresi, Daria Proniakova, Yuliia Kominko, Gytis Juška, Laura M. Herz, Sergii Yakunin, Maksym V. Kovalenko   +10 more
wiley   +1 more source

Organic neuromorphic electronics powering intelligent sensory and edge computing systems

InfoMat, EarlyView.
Organic electronic materials are promising candidates for neuromorphic sensing applications, including chemical, physical, visual, and multimodal sensing, owing to their mechanical softness, biocompatibility, and intrinsic ionic–electronic coupling.
Seungjun Woo, Minji Chung, Hyun Woo Song, Seoyoung Kim, Eun Kwang Lee, Joon Hak Oh   +5 more
wiley   +1 more source

A novel n‐type dimer dopant for semiconducting polymers

Polymer International, EarlyView.
A novel molecular n‐type dopant (1) with superior capacity to dope conjugated polymers is introduced. After charge transfer the product (2) remains in the polymer. Abstract Efficient and stable doping of organic semiconductors is crucial for adjusting their electrical properties.
Andreas Opitz, Nele Merten, Vasu Malhotra, Anukul Jana, Norbert Koch   +4 more
wiley   +1 more source

Carrier and Phonon Engineering in Sb‐Doped Sn0.8Mn0.1Pb0.1Te: A Pathway to Superior Thermoelectric Performance

Rare Metals, EarlyView.
ABSTRACT SnTe is considered a potential alternative to PbTe for thermoelectric applications. However, excessive carrier concentration and thermal conductivity result in poor thermoelectric performance. Herein, p‐type SnTe‐based materials Sn0.8‐xMn0.1Pb0.1SbxTe were synthesized, and the combined effects of Sb, Mn, and Pb were systematically investigated.
Jun‐Xiang Zhang, Zhi‐Hao Li, Qi‐Dong Wang, Zhen‐Zhen Meng, Ting‐Ting Chen, Tai‐Chao Su, Peng Cao, Jian‐Hong Hu, Dong‐Wei Ao, Bing Sun, Hong‐An Ma   +10 more
wiley   +1 more source

Dopingless Ambipolar Field‐Effect Transistors Based on MoTe2 2D Material for CMOS Nanoelectronics

Advanced Electronic Materials
The charge transport characteristics of ambipolar MoTe2 field‐effect transistors (FETs), with the entire MoTe2 channel exposed to ambient air, across varying temperature conditions, are experimentally and theoretically investigated.
Vilas Patil, Hazel Neill, Brendan Sheehan, Paul K. Hurley, Lida Ansari, Farzan Gity   +5 more
doaj   +1 more source

Surface-Potential-Based Drain Current Model of Gate-All-Around Tunneling FETs

IEEE Journal of the Electron Devices Society
A closed-form, analytical, and unified model for the surface potential from source to drain in nanowire (NW) gate-all-around (GAA) tunneling field effect transistors (TFETs) is proposed and validated.
Zhanhang Chen, Haoliang Shan, Ziyi Ding, Xia Wu, Xiaolin Cen, Xiaoyu Ma, Wanling Deng, Junkai Huang   +7 more
doaj   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

Physical reservoir computing with graphene-based solid electric double layer transistor and the information processing capacity analysis

Applied Physics Express
Physical reservoir computing (PRC) is helpful for power reduction in machine learning technology, although the challenge is to improve computational performance.
Hina Kitano, Daiki Nishioka, Kazuya Terabe, Takashi Tsuchiya   +3 more
doaj   +1 more source

Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga2O3/NiO Semiconductors

ACS Applied Materials and Interfaces
Recent advancements in power electronics have been driven by Ga2O3-based ultrawide bandgap (UWBG) semiconductor devices, enabling efficient high-current switching.
Saravanan Yuvaraja, Vishal Khandelwal, Shibin Krishna, Yi Lu, Zhiyuan Liu, Mritunjay Kumar, Xiao Tang, Glen Isaac Maciel García, Dhanu Chettri, Che-Hao Liao, Xiaohang Li   +10 more
semanticscholar   +1 more source