Results 211 to 220 of about 9,695,497 (239)

An Ultra-Dense One-Transistor Ternary-Content-Addressable Memory Array Based on Non-Volatile and Ambipolar Fin Field-Effect Transistors

IEEE Transactions on Electron Devices, 2023
An ultra-dense one-transistor (1T) ternary-content addressable memory (TCAM) array is reported that is based on high-performance, non-volatile, and ambipolar ferroelectric (Fe) silicon-on-insulator (SOI) fin field-effect transistors (FinFETs). Because of
Zhaohao Zhang, S. Mao, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, H. Yin, Tianchun Ye   +6 more
semanticscholar   +1 more source

Current conduction in ambipolar organic field-effect transistors (OFETs)

SPIE Proceedings, 2007
Current conduction in organic field-effect transistors (OFETs) has attracted much attention. The most intriguing issue is that for most organic semiconductors only one carrier type is observed. To examine why this is so, effort has been spent to study ambipolar conduction in OFETs under strong gate bias.
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Study of Ambipolar Current of a Steep Slope Tunneling FET with Drain Underlap

2020 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT), 2020
The tunneling field effect transistor is basically a gated p-i-n diode, is recently under rising interest due to its potential to deliver steep on-off slopes and its ability in operating at supply voltages below 0.5 V. We present simulation results of double gate pocket doped silicon n-channel Tunnel FET on the investigation of the influences of drain ...
Satya Gopal Dinda, S. Sundar Kumar Iyer
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Insights on the Origination of Ambipolar Photocurrent of Ferroelectric and the Improvement of Photoanodic Current

Journal of the Electrochemical Society, 2019
Modulating the photoelectrochemical (PEC) reactions on one photoelectrode is of significance to the photoelectrochemistry. Herein, we fabricate ferroelectric photoelectrode based on Pb(Zr, Ti)O3 (PZT) without polarization that shows tunable PEC reactions
Yakun Wang, Jun Liu, Yanbin Huang, Zhanyong Wang, Qicong Li, S. Yue, Kong Liu, Shaolong Yan, Mingsheng Liu, Dawei Cao, Yan Li, Zhijie Wang, Xinrong Yang, S. Qu   +13 more
semanticscholar   +1 more source

Kinetics of ambipolar diffusion and drift currents of nonequilibrium carriers in semiconductors

Semiconductors, 2003
A radically new method is suggested for drift mobility determination in semiconductors; this method is based on the measurement of how much time it takes to attain a peak value of the diffusion-drift current of nonequilibrium charge carriers excited by short pulses of light from a high-absorption region through the one of the contacts.
A. A. Abdullaev, A. R. Aliev, I. K. Kamilov   +2 more
openaire   +1 more source

Temperature Influence on Tunnel Field Effect Transistors (TFETs) with Low Ambipolar Currents

ECS Transactions, 2011
This work presents a study of the temperature impact on tunnel field effect transistors performance. After design considerations regarding undesirable ambipolar currents, TFETs were simulated for temperatures ranging from 100 to 400 K. Bearing this objective in mind, the influence of each one of the most relevant transport mechanisms was analyzed and ...
Marcio D. Martino, Paula G. Der Agopian, Sebastião G. Dos Santos Filho, João A. Martino   +3 more
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Suppression of ambipolar current in tunnel FETs using drain-pocket: Proposal and analysis

Superlattices and Microstructures, 2018
Abstract In this paper, we investigate the impact of a drain-pocket (DP) adjacent to the drain region in Tunnel Field-Effect Transistors (TFETs) to effectively suppress the ambipolar current. Using calibrated two-dimensional device simulation, we examine the impact of DP in Double Gate TFET (DGTFET). We demonstrate the superiority of the DP technique
Shelly Garg, Sneh Saurabh
openaire   +1 more source

An Ambipolar Virtual-Source-Based Charge-Current Compact Model for Nanoscale Graphene Transistors

IEEE Transactions on Nanotechnology, 2014
A compact physics-based ambipolar-virtual-source (AVS) model is presented that describes carrier transport in both unipolar and ambipolar regimes in quasi-ballistic graphene field-effect transistors (GFETs). The transport model incorporates two separate virtual sources for electrons and holes and is supplemented by a self-consistent channel-charge ...
Shaloo Rakheja, Yanqing Wu, Han Wang, Tomas Palacios, Phaedon Avouris, Dimitri A. Antoniadis   +5 more
openaire   +1 more source

The Hypothesis of Two-Sources on TFET’s Ambipolar Current and its Quantum Confinement Effect

2020 8th International Electrical Engineering Congress (iEECON), 2020
An innovative TFET called Double Symmetrical Source Tunnel FET (DSS-TFET) is put forward in this paper, which fosters higher I ON with smaller driving voltage as compared to conventional TFETs. The tunnelling area is considerably upgraded which increases the I ON , for smaller turn-on voltage.
Bijoy Goswami, Kousik Naskar, Sharmistha Shee kanra, Anup Day, Abir Jana, Subir Kumar Sarkar   +5 more
openaire   +1 more source

Compressed Current Sheets in the Magnetotail: Importance of the Ambipolar Electric Field

2022
Micro-scale features are now being resolved by NASA’s Magnetospheric Multi-Scale (MMS) mission, which means for the first time, we are able to investigate thin and non-ideal current sheets (i.e. current sheets that cannot be explained by the Harris equilibrium model) in detail and assess their role in magnetic reconnection. We use MMS satellite data to
openaire   +1 more source