Dependable Digitally-Assisted Mixed-Signal IPs Based on Integrated Self-Test & Self-Calibration [PDF]
, 2010 Heterogeneous SoC devices, including sensors, analogue and mixed-signal front-end circuits and the availability of massive digital processing capability, are being increasingly used in safety-critical applications like in the automotive, medical, and the
Kerkhoff, Hans G., Wan, Jinbo
core +13 more sources
Highly-integrable analogue reservoir circuits based on a simple cycle architecture. [PDF]
Sci RepAbstractPhysical reservoir computing is a promising solution for accelerating artificial intelligence (AI) computations. Various physical systems that exhibit nonlinear and fading-memory properties have been proposed as physical reservoirs. Highly-integrable physical reservoirs, particularly for edge AI computing, has a strong demand.
Abe Y +8 more
europepmc +4 more sources
Generation of the Narrow Band Digital Modulated Signals Using Quadrature Digital Upconverter [PDF]
Radioengineering, 2003 The paper deals with the modern approach to generation of digitalmodulated signals at intermediate frequency in digital way. The commondigital modulator is based on analogue Quadrature modulator.
P. Kovar
doaj +2 more sources
A 28 nm CMOS 100 MHz 67 dB-Dynamic-Range 968 µW Flipped-Source-Follower Analog Filter
Journal of Low Power Electronics and Applications, 2021 This paper presents a fourth-order continuous-time analog filter based on the cascade of two flipped-source-follower (FSF) biquadratic (biquad) cells.
Marcello De Matteis +3 more
doaj +1 more source
Simulative Researching of a 1200V SiC Trench MOSFET With an Enhanced Vertical RESURF Effect
IEEE Journal of the Electron Devices Society, 2020 A SiC trench MOSFET with an enhanced vertical RESURF effect is proposed and analyzed in this article. The device features a deep oxide trench surrounded by a P-type doping layer at the source-side. With the assistant depletion effect of the P-type layer,
Han Yang +4 more
doaj +1 more source
A 1.2V −55°C‐125°C ultra‐low noise bandgap voltage reference without start‐up circuit
Electronics Letters, 2023 This paper proposes a novel bandgap voltage reference (BGR) with low temperature coefficient, ultra‐low noise and without start‐up circuit. Designed in a TSMC 180‐nm CMOS technology, this bandgap voltage reference operates in the temperature range of −55
Linzhi Tao, Haoyu Zhuang, Qiang Li
doaj +1 more source
A novel bandgap voltage reference based on folding compensation
Electronics Letters, 2023 This letter proposes a novel bandgap reference circuit that utilizes both curvature and folding compensation to achieve a temperature coefficient (TC) of 2.23 ppm/°C.
Mingyu Liu +4 more
doaj +1 more source
An expandable 36‐channel neural recording ASIC with modular digital pixel design technique
Electronics Letters, 2023 This paper presents the design and implementation of an expandable neural recording ASIC for multiple‐channel neural recording applications. The ASIC consists of 36 modular digital pixels (MDPs) and a global digital controller (GDC) circuit. Each MDP has
Quan Wang +8 more
doaj +1 more source
Reducing specific on-resistance for a trench SOI LDMOS with L-shaped P/N pillars
Results in Physics, 2020 To reduce specific on-resistance (Ron,sp) of power devices, a novel SOI (silicon-on-insulator) trench gate LDMOS with heavily doping L-shaped P/N pillars and vertical dual-trench-gates is proposed in this paper, and its physical mechanism and electrical ...
Jingwei Guo +6 more
doaj +1 more source
New full‐wave rectifier based on modified voltage differencing transconductance amplifier
IET Circuits, Devices and Systems, 2022 A full‐wave rectifier based on a modified voltage differencing transconductance amplifier‐MVDTA and four n‐MOS transistors (or inverting full‐wave rectifier), with no use of any passive elements is proposed in this paper.
Predrag B. Petrović
doaj +1 more source