Results 1 to 10 of about 127,795 (313)

High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling [PDF]

Micromachines, 2019
The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (Ion) and low subthreshold swing (SS) with reasonable ambipolar characteristics.
Garam Kim, Jaehong Lee, Jang Hyun Kim, Sangwan Kim   +3 more
doaj   +6 more sources

Band-to-Band Tunneling Based Ultra-Energy-Efficient Silicon Neuron [PDF]

IEEE Transactions on Electron Devices, 2020
The human brain comprises about a hundred billion neurons connected through quadrillion synapses. Spiking Neural Networks (SNNs) take inspiration from the brain to model complex cognitive and learning tasks. Neuromorphic engineering implements SNNs in hardware, aspiring to mimic the brain at scale (i.e., 100 billion neurons) with biological area and ...
Tanmay Chavan, Sangya Dutta, Nihar R. Mohapatra, Udayan Ganguly   +3 more
openaire   +4 more sources

A resilient type-III broken gap Ga2O3/SiC van der Waals heterogeneous bilayer with band-to-band tunneling effect and tunable electronic property [PDF]

Scientific Reports
The potential of van der Waals (vdW) heterostructure to incorporate the outstanding features of stacked materials to meet a variety of application requirements has drawn considerable attention.
Naim Ferdous, Md. Sherajul Islam, Jeongwon Park   +2 more
doaj   +2 more sources

Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application [PDF]

Small Science
In the era of big data, negative differential resistance (NDR) devices have attracted significant attention as a means of handling massive amounts of information.
Gunhoo Woo, Jinill Cho, Heejung Yeom, Min Young Yoon, Geon Woong Eom, Muyoung Kim, Jihun Mun, Hyo Chang Lee, Hyeong-U Kim, Hocheon Yoo, Taesung Kim   +10 more
doaj   +2 more sources

Three Temperature Regimes in Subthreshold Characteristics of FD-SOI pMOSFETs From Room-Temperature to Cryogenic Temperatures

IEEE Journal of the Electron Devices Society, 2023
We reported three temperature regimes in subthreshold characteristics of 22-nm FD-SOI p-MOSFETs at operation ${T}\,\,=$ 300 K – 4.5 K. Subthreshold swing (SS)-plateau at 125 K – 50 K in combination with SS-linearity at ${T}\,\,=$ 300 K &
Yo-Ming Chang, Ting Tsai, Yu-Wen Chiu, Horng-Chih Lin, Pei-Wen Li   +4 more
doaj   +1 more source

Investigation of Tunneling Effect for a N-Type Feedback Field-Effect Transistor

Micromachines, 2022
In this paper, the tunneling effect for a N-type feedback field-effect transistor (NFBFET) was investigated. The NFBFET has highly doped N-P junction in the channel region.
Jong Hyeok Oh, Yun Seop Yu
doaj   +1 more source

Can one extract the electron-phonon-interaction from tunneling data in case of the multigap superconductor MgB$_2$? [PDF]

, 2003
In the present work we calculate the tunneling density of states (DOS) of MgB% $_{2}$ for different tunneling directions by directly solving the two-band Eliashberg equations (EE) in the real-axis formulation.
A. A. Golubov, A. Brinkman, A.A. Galkin, A.A. Golubov, A.Y. Liu, B. Farnworth, F. Bouquet, F. Giubileo, F. Marsiglio, G. A. Ummarino, H. Schmidt, H.J. Choi, H.J. Choi, I.I. Mazin, I.I. Mazin, I.I. Mazin, J. Kortus, J. Kortus, J. Nagamatsu, K.-P. Bohnen, M. Iavarone, M.R. Eskildsen, O. V. Dolgov, P. Szabó, R. S. Gonnelli, R.S. Gonnelli, R.S. Gonnelli, S. V. Shulga, V.M. Svistunov, Y. Kong, Yu.G. Naidyuk   +30 more
core   +13 more sources

A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET

IEEE Journal of the Electron Devices Society, 2022
The origin of low-frequency noise (LFN) properties and the accuracy of LFN model were demonstrated in a fully depleted silicon-on-insulator p-type tunneling field-effect transistor (pTFET).
Hyun-Jin Shin, Sunil Babu Eadi, Seong-Hyun Kim, Tae-Gyu Ryu, Yeong-Jin An, Do-Woo Kim, Hi-Deok Lee, Hyuk-Min Kwon   +7 more
doaj   +1 more source

Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications

Advanced Electronic Materials, 2023
Band‐to‐band tunneling (BTBT) devices with superior subthreshold swing directly related to on/off switching speed and power consumption efficiency have emerged as a breakthrough of the limitation in conventional metal‐oxide‐semiconductor field‐effect ...
Gunhoo Woo, Taesung Kim, Hocheon Yoo
doaj   +1 more source

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

Micromachines, 2023
In this paper, a new SiGe/Si heterojunction double-gate heterogate dielectric tunneling field-effect transistor with an auxiliary tunneling barrier layer (HJ-HD-P-DGTFET) is proposed and investigated using TCAD tools. SiGe material has a smaller band gap
Qing Chen, Rong Sun, Ruixia Miao, Hanxiao Liu, Lulu Yang, Zengwei Qi, Wei He, Jianwei Li   +7 more
doaj   +1 more source