Large Variation in Temperature Dependence of Band-to-Band Tunneling Current in Tunnel Devices
IEEE Electron Device Letters, 2019 The observation of a significant temperature-dependent variation in the ${I}$ – ${V}$ characteristics of tunneling devices is often interpreted as a signature of a trap-assisted-tunneling dominated current. In this letter, we use a ballistic 2D quantum-mechanical simulator, calibrated using the measured temperature-dependent ${I ...
Bizindavyi, J. +4 more
openaire +4 more sources
Analysis of InAs Vertical and Lateral Band-to-Band Tunneling Transistors: Leveraging Vertical Tunneling for Improved Performance [PDF]
, 2010 Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the gate-source overlap region can offer larger ON current and steeper ...
Ganapathi, Kartik +2 more
core +2 more sources
Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors [PDF]
, 2005 Electronic transport in a carbon nanotube (CNT) metal-oxide-semiconductor field effect transistor (MOSFET) is simulated using the non-equilibrium Green's functions method with the account of electron-phonon scattering.
Dmitri E. Nikonov +4 more
core +6 more sources
Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors [PDF]
Advanced Functional Materials, 2020 Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field‐effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This type of device
Quanshan Lv +8 more
semanticscholar +1 more source
A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor. [PDF]
Sci Rep, 2017 Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature.
Vitale WA +10 more
europepmc +2 more sources
Band-to-band tunneling switches based on two-dimensional van der Waals heterojunctions
Applied Physics Reviews, 2023 Quantum mechanical band-to-band tunneling is a type of carrier injection mechanism that is responsible for the electronic transport in devices like tunnel field effect transistors (TFETs), which hold great promise in reducing the subthreshold swing below
P. Chava +4 more
semanticscholar +1 more source
Integration of resonant band with asymmetry in ferroelectric tunnel junctions
npj Computational Materials, 2022 We propose that the asymmetry-induced tunneling electroresistance (TER) effect in a ferroelectric tunnel junction (FTJ) could be improved by integrating a polarization-controlled resonant band. Using first-principles calculations and a quantum-mechanical
Jing Su +4 more
doaj +1 more source
Nano-buffer controlled electron tunneling to regulate heterojunctional interface emission
Opto-Electronic Advances, 2021 Interface emission from heterojunction is a shortcoming for electroluminescent devices. A buffer layer introduced in the heterojunctional interfaces is a potential solution for the challenge.
Wei Liu +5 more
doaj +1 more source
Crystals, 2022 Models describing the tunneling of electrons and holes through parabolic InxGa1−xN/GaN quantum well/LED structures with respect to strain were developed. The transmission coefficient, tunneling lifetime, and efficiency of LED structures were evaluated by
Hind Althib
doaj +1 more source
Hole tunneling times in GaAs/AlAs double-barrier structures [PDF]
, 1989 We have calculated hole tunneling times in GaAs/AlAs double-barrier structures taking quantum well band-mixing effects into account. Our results indicate that for sufficiently high hole temperatures and concentrations, band-mixing effects reduce average ...
Jackson, M. K., McGill, T. C., Yu, E. T.
core +1 more source