Results 21 to 30 of about 127,795 (313)

Topological surface states above the Fermi energy in $\textrm{Hf}_{2}\textrm{Te}_2\textrm{P}$ [PDF]

, 2019
We report a detailed experimental study of the band structure of the recently discovered topological material $\textrm{Hf}_{2}\textrm{Te}_2\textrm{P}$.
Bostwick, A., Boyle, T. J., Carlson, P., Jozwiak, C., Klavins, P., Miller, M. K., Neto, E. H. da Silva, Rossi, A., Rotenberg, E., Taufour, V., Vishik, I., Walker, M., Zhao, J.   +12 more
core   +3 more sources

A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect

Micromachines, 2022
A heterojunction tunneling field effect transistor with an L-shaped gate (HJ-LTFET), which is very applicable to operate at low voltage, is proposed and studied by TCAD tools in this paper.
Boyang Ma, Shupeng Chen, Shulong Wang, Tao Han, Hao Zhang, Chenyu Yin, Yaolin Chen, Hongxia Liu   +7 more
doaj   +1 more source

Double-gap superconducting proximity effect in nanotubes [PDF]

, 2007
We theoretically explore the possibility of a superconducting proximity effect in single-walled metallic carbon nanotubes due to the presence of a superconducting substrate.
C. Bena, Cristina Bena, Karyn Le Hur, L. Balents, P. L. McEuen, Smitha Vishveshwara, T. Giamarchi   +6 more
core   +2 more sources

Mind the drain from strain: effects of strain on the leakage current of Si diodes [PDF]

, 2018
We present a systematic study of the impact of strain on off-state leakage current, using experimental data and ab-initio calculations. We developed new models to account for the impact of strain on band-to-band tunneling and trap-assisted tunneling in ...
Duffy, Ray, Liu, Chang, Murphy-Armando, Felipe, Zhao, Yi   +3 more
core   +1 more source

Bilayer tunneling field effect transistor with oxide-semiconductor and group-IV semiconductor hetero junction: Simulation analysis of electrical characteristics

AIP Advances, 2019
Operation mechanisms and electrical characteristics of tunneling field-effect transistors (TFETs) employing a hetero tunneling junction by utilizing an n-type oxide-semiconductor (OS) and a p-type group-IV-semiconductor are comprehensibly analyzed.
Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi   +4 more
doaj   +1 more source

The determination of the electron-phonon interaction from tunneling data in the two-band superconductor MgB2 [PDF]

, 2003
We calculate the tunneling density of states (DOS) of MgB2 for different tunneling directions, by directly solving the real-axis, two-band Eliashberg equations (EE).
Abramowicz M A, Abramowicz M A, Abramowicz M A, Abramowicz M A, Abramowicz M A, Ahn S-S, Bini D, d'Inverno R, de Felice F, Geroch R, Hawking S W, Hilbert D, Hong S-K, Misner C, O'Neill B, Ponge R, Sonego S, Thomas Foertsch, Vickers J A G, Volker Perlick, Walschap G, Westenholz C v, Wolfgang Hasse   +22 more
core   +4 more sources

Ab initio simulation study of defect assisted Zener tunneling in GaAs diode

AIP Advances, 2017
The band to band tunneling of defective GaAs nano-junction is studied by using the non-equilibrium Green’s function formalism with density functional theory.
Juan Lu, Zhi-Qiang Fan, Jian Gong, Xiang-Wei Jiang   +3 more
doaj   +1 more source

Tunnel Field-Effect Transistor: Impact of the Asymmetric and Symmetric Ambipolarity on Fault and Performance in Digital Circuits

Journal of Low Power Electronics and Applications, 2022
Tunnel Field-Effect Transistors (TFETs) have been considered one of the most promising technologies to complement or replace CMOS for ultra-low-power applications, thanks to their subthreshold slope below the well-known limit of 60 mV/dec at room ...
Chiara Elfi Spano, Fabrizio Mo, Roberta Antonina Claudino, Yuri Ardesi, Massimo Ruo Roch, Gianluca Piccinini, Marco Vacca   +6 more
doaj   +1 more source

Engineering interband tunneling in nanowires with diamond cubic or zincblende crystalline structure based on atomistic modeling [PDF]

, 2013
We present an investigation in the device parameter space of band-to-band tunneling in nanowires with a diamond cubic or zincblende crystalline structure.
D'Amico, Pino, Fiori, Gianluca, Iannaccone, Giuseppe, Marconcini, Paolo   +3 more
core   +2 more sources

Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor

IEEE Open Journal of Nanotechnology, 2020
In this paper, using device simulations, we investigate electrical characteristics of a tunnel field-effect transistor (TFET) in which band-to-band tunneling (BTBT) occurs dominantly within the channel, rather than at source-channel junction.
Shelly Garg, Sneh Saurabh
doaj   +1 more source