Results 31 to 40 of about 127,795 (313)

Analytical modeling of transport phenomena in heterojunction triple metal gate all around tunneling field effect transistor

AIP Advances, 2020
An analytical model for the transport phenomena of a heterojunction triple metal gate all around tunneling field effect transistor (HTM GAA TFET) is developed for the first time in this paper. The continuous surface potential profile of the staggered-gap
Marjana Mahdia, Quazi Deen Mohd Khosru
doaj   +1 more source

Two-band modeling of narrow band gap and interband tunneling devices [PDF]

, 1990
A two-band transfer matrix method has been developed to study tunneling currents in narrow gap and interband tunnel structures. This relatively simple model gives good agreement with recently reported experimental results for InAs/AlSb/InAs/AlSb/InAs ...
Jackson, M. K., McGill, T. C., Rajakarunanayake, Y., Söderström, J. R., Yu, E. T.   +4 more
core   +1 more source

Analysis of Ge-Si Heterojunction Nanowire Tunnel FET: Impact of Tunneling Window of Band-to-Band Tunneling Model

, 2017
Tunnel FET (TFET) has potential applications in the next generation ultra-low power transistor to substitute the conventional FETs. It can offer very steep inverse subthreshold swing slope to maintain a low leakage current, thus it can be very essential ...
E. D. Kurniawan, Shang-Yi Yang, V. Thirunavukkarasu, Yung-Chun Wu   +3 more
semanticscholar   +1 more source

Critical band-to-band-tunnelling based optoelectronic memory

Light: Science & Applications
Abstract Neuromorphic vision hardware, embedded with multiple functions, has recently emerged as a potent platform for machine vision. To realize memory in sensor functions, reconfigurable and non-volatile manipulation of photocarriers is highly desirable.
Hangyu Xu, Runzhang Xie, Jinshui Miao, Zhenhan Zhang, Haonan Ge, Xuming Shi, Min Luo, Jinjin Wang, Tangxin Li, Xiao Fu, Johnny C. Ho, Peng Zhou, Fang Wang, Weida Hu   +13 more
openaire   +3 more sources

Comparative performance analysis of different gate structure engineering on double gate tunnel FET

Next Materials
Through band-to-band tunneling, Tunnel Field Effect Transistors (TFETs) reduce leakage and subthreshold swing, giving them an advantage over MOSFET. However, ambipolar conduction and low ON state current are problems with traditional TFET.
Sudha Subhalaxmi Muduli, Ananya Dastidar, Aruna Tripathy, Sukanta Kumar Swain   +3 more
doaj   +1 more source

Vortex Imaging in the pi-Band of Magnesium Diboride

, 2002
We report scanning tunneling spectroscopy imaging of the vortex lattice in single crystalline MgB2. By tunneling parallel to the c-axis, a single superconducting gap (Delta = 2.2 meV) associated with the pi-band is observed.
A. Junod, A. A. Golubov, C. Buzea, F. Bouquet, G. Gladstone, J. Jun, J. Karpinski, M. Iavarone, M. Kugler, M. R. Eskildsen, N. Nakai, S. M. Kazakov, S. Tanaka, Y. Wang, Ø. Fischer   +14 more
core   +1 more source

Modeling of electrochemical oxide film growth – impact of band-to-band tunneling

Electrochimica Acta, 2022
The Point Defect Model (PDM) describes the corrosion resistance properties of oxide films based on interfacial reactions and defect transport, which are affected by the electric field inside the oxide film. The PDM assumes a constant electric field strength due to band-to-band tunneling (BTBT) of electrons and the separation of electrons and holes by ...
Bösing, Ingmar, Thöming, Jorg, La Mantia, Fabio   +2 more
openaire   +2 more sources

Operation Mechanism of a MoS2/BP Heterojunction FET

Nanomaterials, 2018
The electrical characteristics and operation mechanism of a molybdenum disulfide/black phosphorus (MoS2/BP) heterojunction device are investigated herein. Even though this device showed a high on-off ratio of over 1 × 107, with a lower subthreshold
Sung Kwan Lim, Soo Cheol Kang, Tae Jin Yoo, Sang Kyung Lee, Hyeon Jun Hwang, Byoung Hun Lee   +5 more
doaj   +1 more source

Multi-band effects on Fulde-Ferrell-Larkin-Ovchinnikov states of Pauli-limited superconductors

, 2014
Multi-band effects on Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) states of a Pauli-limiting two-band superconductor are studied theoretically, based on self-consistent calculations of the Bogoliubov-de Gennes equation.
Machida, Kazushige, Mizushima, Takeshi, Takahashi, Masahiro   +2 more
core   +1 more source

Highly Sensitive SOI-TFET Gas Sensor Utilizing Tailored Conducting Polymers for Selective Molecular Detection and Microbial Biosensing Integration

Biosensors
We present a highly sensitive and selective gas sensor based on an advanced silicon-on-insulator tunnel field-effect transistor (SOI-TFET) architecture, enhanced through the integration of customized conducting polymers. In this design, traditional metal
Mohammad K. Anvarifard, Zeinab Ramezani
doaj   +1 more source