Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor [PDF]
Journal of Optoelectronical Nanostructures, 2019 In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details.
Mahsa Roohy, Reza Hosseini
doaj
Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures
IEEE Journal of the Electron Devices Society, 2018 2-D transition metal dichalcogenides (TMDs) are promising materials for CMOS application due to their ultrathin channel with excellent electrostatic control.
Yashwanth Balaji +10 more
doaj +1 more source
Fermi level pinning at the Ge(001) surface - A case for non-standard explanation
, 2015 To explore the origin of the Fermi level pinning in germanium we investigate the Ge(001) and Ge(001):H surfaces. The absence of relevant surface states in the case of Ge(001):H should unpin the surface Fermi level. This is not observed.
Godlewski, Szymon +6 more
core +1 more source
Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes
IEEE Journal of the Electron Devices Society, 2018 Discrepancies exist between the theoretically predicted and experimentally measured performance of band-to-band tunneling devices, such as Esaki diodes and tunnel field-effect transistors (TFETs).
Jasper Bizindavyi +5 more
doaj +1 more source
Crosstalk between the ribosome quality control‐associated E3 ubiquitin ligases LTN1 and RNF10
FEBS Letters, EarlyView.Loss of the E3 ligase LTN1, the ubiquitin‐like modifier UFM1, or the deubiquitinating enzyme UFSP2 disrupts endoplasmic reticulum–ribosome quality control (ER‐RQC), a pathway that removes stalled ribosomes and faulty proteins. This disruption may trigger a compensatory response to ER‐RQC defects, including increased expression of the E3 ligase RNF10 ...
Yuxi Huang +8 more
wiley +1 more source
Applied Sciences, 2020 Ternary complementary metal-oxide-semiconductor technology has been spotlighted as a promising system to replace conventional binary complementary metal-oxide-semiconductor (CMOS) with supply voltage (VDD) and power scaling limitations.
Kitae Lee +3 more
doaj +1 more source
AlAsSb avalanche photodiodes with a sub-mV/K temperature coefficient of breakdown voltage
, 2011 The temperature dependence of dark current and avalanche gain were measured on AlAsSb p-i-n diodes with avalanche region widths of 80 and 230 nm. Measurements at temperatures ranging from 77 to 295 K showed that the dark current decreases rapidly with ...
Tan, C.H., Xie, S.
core +1 more source
Scanning tunneling microscopy and spectroscopy of sodium-chloride overlayers on the stepped Cu(311) surface: Experimental and theoretical study [PDF]
, 2004 The physical properties of ultrathin NaCl overlayers on the stepped Cu(311) surface have been characterized using scanning tunneling microscopy (STM) and spectroscopy, and density functional calculations.
F. E. Olsson +8 more
core +2 more sources
Influence of phonon scattering on the performance of p-i-n band-to-band tunneling transistors [PDF]
, 2007 Power dissipation has become a major obstacle in performance scaling of modern integrated circuits and has spurred the search for devices operating at lower voltage swing.
S. Koswatta, M. Lundstrom, D. Nikonov
semanticscholar +1 more source
Molecular Oncology, EarlyView.Aptamers are used both therapeutically and as targeting agents in cancer treatment. We developed an aptamer‐targeted PLGA–TRAIL nanosystem that exhibited superior therapeutic efficacy in NOD/SCID breast cancer models. This nanosystem represents a novel biotechnological drug candidate for suppressing resistance development in breast cancer.
Gulen Melike Demirbolat +8 more
wiley +1 more source