Results 51 to 60 of about 127,795 (313)
Tunable Hybridization at Mid Zone and Anomalous Bloch-Zener Oscillations in Optical Waveguide Ladders [PDF]
, 2010 We have studied the optical oscillation and tunneling of light waves in optical waveguide ladders formed by two coupled planar optical waveguide arrays.
Bloch +18 more
core +1 more source
Advanced Engineering Materials, EarlyView.High‐temperature interactions between low‐sulfur Al‐killed Mn–B steel and MgO–C refractories (0 and 50 wt% recyclates) are studied via finger immersion tests (1600 °C). Surface‐active elements influence infiltration. MgO/CaS layer forms, along with spinel and calcium silicate.
Matheus Roberto Bellé +5 more
wiley +1 more source
Imaging real-space flat band localization in kagome magnet FeSn
Communications Materials, 2023 Direct imaging and tuning of flat band localization in kagome materials remains a challenge. Here, scanning tunneling microscopy and photoemission spectroscopy are used to study FeSn, revealing real-space localization and magnetic tuning of the flat band
Daniel Multer +14 more
doaj +1 more source
Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon-assisted tunneling. [PDF]
Nano letters (Print), 2007 Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits.
S. Koswatta +2 more
semanticscholar +1 more source
Advanced Functional Materials, EarlyView.PBTTT‐OR‐R, a C14‐alkoxy/alkyl‐PBTTT polymer derivative, is of substantial interest for optoelectronics due to its specific fullerene intercalation behavior and enhanced charge‐transfer absorption. Comparing this polymer with (S) and without (O) homocoupling defects reveals that PBTTT‐OR‐R(O) forms stable co‐crystals with PC61BM, while PBTTT‐OR‐R(S ...
Zhen Liu +14 more
wiley +1 more source
Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors [PDF]
, 2016 We present temperature dependent electrical measurements on n-type InAs/InSb nanowireheterostructurefield-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment.
Caroff, Philippe +5 more
core +1 more source
Advanced Functional Materials, EarlyView.A lack of standard approaches for testing and reporting the performance of metal halide perovskites and organic semiconductor radiation detectors has resulted in inconsistent interpretation of performance parameters, impeding progress in the field. This Perspective recommends key metrics and experimental details, which are suggested for reporting in ...
Jessie A. Posar +8 more
wiley +1 more source
An InGaN/SiNx/Si Uniband Diode Photodetector
Advanced Photonics Research, 2022 A novel self‐powered InGaN/SiNx/Si uniband diode photodetector (PD) is introduced. The full band structure is first constructed from the transition of direct tunneling to Fowler‐Nordheim tunneling of holes through the ultrathin SiNx interlayer at forward
Jiaxun Song +7 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Novel ferrocene derivatives (e.g., FcPhc2) are used as an ultrathin layer hole‐blocking layer, reducing hole injection from the Ag contact. This results in an ultralow noise spectral density of 1.2 × 10−14 A Hz−1/2, and a high specific detectivity of 8.1 × 1012 Jones at −0.5 V.
Eunyoung Hong +16 more
wiley +1 more source
Resonant tunneling of electromagnetic waves through polariton gaps
, 1998 We consider resonant tunneling of electromagnetic waves through an optical barrier formed by dielectric layers with the frequency dispersion of their dielectric permiability.
A. A. Lisyansky +20 more
core +1 more source