Results 141 to 150 of about 42,361 (184)

Modelling, analysis, and experimental study of SiC JFET body diode

The European Physical Journal Applied Physics, 2010
Within Silicon Carbide Junction Field Effect Transistor (SiC-JFET) model, body diode is not extensively studied and almost under-researched. Body diode remains a complex device to study particularly during switching transients. In this paper, the JFET body diode is experimentally demonstrated to be a power. PiN diode.
Ben Salah, Tarek, Lahbib, Y., Morel, Hervé   +2 more
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Analysis of the reverse recovery oscillation of superjunction MOSFET body diode

Solid-State Electronics, 2017
Abstract The voltage and current oscillations occasionally occur during the reverse recovery transient of the superjunction MOSFET body diode. This paper identifies the unique reverse recovery oscillation characteristics of the superjunction MOSFET body diode.
Peng Xue, Guicui Fu
exaly   +2 more sources

Fast reverse recovery body diode in high-voltage vdmosfet using cell-distributed schottky contacts

IEEE Transactions on Electron Devices, 2003
A new approach to improve the high-voltage vertical double-diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed. In this approach, a Schottky contact is integrated into every cell of the VD-MOSFET.
J K O Sin
exaly   +2 more sources

An evaluation of the failures in resonant topologies due to the body diode and the role of fast diode MOSFET

2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 2020
The aim of this paper is to evaluate and understand the failure mechanism due to reverse recovery of the intrinsic body diode of the Super Junction MOSFET in terms of physical processes both inside the device and at the converter level. Nowadays, higher reliability and theoretically failure free systems are in high demand in order to maintain service ...
Domenico Nardo, Alfio Scuto, Simone Buonomo   +2 more
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Efficacy of a multiple diode laser system for body contouring

Lasers in Surgery and Medicine, 2011
AbstractBackground and ObjectivesLow‐level laser therapy (LLLT) has been shown to induce cellular reactions in nonphotosynthetic cells however skepticism remains regarding efficacy at the clinical level. The purpose of this study was to evaluate the efficacy of LLLT independent of liposuction.
Courtney M L, Elm, Irmina D, Wallander, Bart, Endrizzi, Brian D, Zelickson   +3 more
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Floating-Body Diode—A Novel DRAM Device

IEEE Electron Device Letters, 2012
A novel 8F2 DRAM cell is introduced, consisting of two gates controlling a low-doped silicon-on-insulator channel and opposite-polarity source and drain. Simulation with models calibrated to experimental floating-body cell data confirms virtual thyristor memory operation and demonstrates 85°C retention time in excess of 10 ms in a scaled FinFET ...
Uygar E. Avci, David L. Kencke, Peter L. D. Chang   +2 more
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Optimization of power MOSFET body diode for speed and ruggedness

IEEE Transactions on Industry Applications, 1990
The built-in diode in the power MOSFET can be used as an integral flyback diode in a power electronics circuit. However, if the power MOSFET is not optimized for utilization of the built-in diode, it can catastrophically fail during the diode mode of operation. A failure mechanism is proposed and discussed. It is found that through improved design with
H. Yilmaz, K. Owyang, P.O. Shafer, C.C. Borman   +3 more
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Reverse Recovery and Carrier Lifetime in Body Diodes of LDMOS Transistors

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021
In this work, we investigate the reverse recovery charge Q rr and carrier lifetime τ HL of body diodes of LDMOS transistors with different RESURF concepts. The carrier lifetime τ HL has an influence on the reverse recovery charge Q rr , which directly influences switching losses.
Vin Loong Choo, Martin Pfost, Jörg Gessner, Klaus Heinrich, Uwe Eckoldt, Madelyn Liew, Yang Hao   +6 more
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Body Diode Reliability of Commercial SiC Power MOSFETs

2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2019
Stacking faults in the drift layer of 1.7 kV 4H-SiC MOSFETs result in body diode degradation, poor carrier conduction in on-state, and high leakage current in off-state. In this paper, the results of forward-bias stress on body diodes are analyzed in commercially available 1.7 kV 4H-SiC MOSFETs. Some devices show a significant degradation after forward-
Minseok Kang, Susanna Yu, Diang Xing, Tianshi Liu, Arash Salemi, Kristen Booth, Shengnan Zhu, Marvin H. White, Anant K. Agarwal   +8 more
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Diode Lasers in Car‐Body Construction

Laser Technik Journal, 2013
AbstractFor more than twelve years, diode lasers are used in series body manufacturing. The first diode laser was installed for brazing tailgates in the Audi A3 in 2001. The most recent generation was introduced last year [1]. For the current model, diode lasers braze tailgates and now even produce the joints between roof and side panels (Fig. 1).
openaire   +1 more source