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Characterization on latest-generation SiC MOSFET's body diode
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2016This work evaluates the reverse recovery behavior of CREE's Gen 3 900V SiC MOSFET's body diode under different conditions. As the highest current rating discrete SiC MOSFET available up-to-now, CREE's Gen 3 900V 10 mΩ SiC MOSFET is the main device under test (DUT) in this work. Both static and dynamic characteristics of the DUT are presented.
Xueyu Hou +2 more
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In vivo dosimetry with silicon diodes in total body irradiation
Radiation Physics and Chemistry, 2014Abstract The aim of this work is the characterization and application of silicon diode detectors for in vivo dosimetry in total body irradiation (TBI) treatments. It was evaluated the diode response with temperature, dose rate, gantry angulations and field size. A maximum response variation of 2.2% was obtained for temperature dependence.
F.F. Oliveira +3 more
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Investigation into the Body Diode Degradation of 6.5 kV SiC MOSFETs
Materials Science Forum, 2020The aim of this study is to investigate the main contributing factors to the degradation of the intrinsic body diode in SiC MOSFETs, caused by the expansion of stacking faults (SFs) from the substrate into the epitaxial layer, and how it affects their performance.
Enea Bianda +5 more
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2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), 2015
In this paper the switching behaviour of SiC MOSFETs is regarded with respect to the influence of the free-wheeling diode. A double pulse test was performed using two silicon carbide Schottky barrier diodes (SBD) of different rated currents and the intrinsic body diode of a silicon carbide MOSFET.
Roman Horff +3 more
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In this paper the switching behaviour of SiC MOSFETs is regarded with respect to the influence of the free-wheeling diode. A double pulse test was performed using two silicon carbide Schottky barrier diodes (SBD) of different rated currents and the intrinsic body diode of a silicon carbide MOSFET.
Roman Horff +3 more
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Comparison Study of Surge Current Capability of Body Diode of SiC MOSFET and SiC Schottky Diode
2018 IEEE Energy Conversion Congress and Exposition (ECCE), 2018The superior performance of the SiC MOSFETs operating in synchronous mode converter without external antiparallel SiC Schottky diodes have been demonstrated recently. However, there are few studies of the surge current capability of the SiC MOSFET's body diode, leading severe concern for its ruggedness in practical power converter applications.
Xi Jiang +7 more
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A PMOS-diode Differential Body-driven Offset compensated 0.5V
20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07), 2007This paper reports a new 0.5 V supply resolution CMOS comparator suitable for biosensor applications. The comparator uses a body-driven PMOS-diode differential pair and compensates for differential body-input referred offset-voltage through single-ended sampled-data pre-amplification.
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Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's, 2004
This paper presents a comprehensive study of the body diode characteristics of high-channel density trench power MOSFETs using analytic modeling, 2-dimensional numerical simulation, and physical measurements. The results show that, for state-of-the-art trench MOSFETs, the body diode characteristics are strongly influenced by majority carriers in the ...
null Dolny +3 more
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This paper presents a comprehensive study of the body diode characteristics of high-channel density trench power MOSFETs using analytic modeling, 2-dimensional numerical simulation, and physical measurements. The results show that, for state-of-the-art trench MOSFETs, the body diode characteristics are strongly influenced by majority carriers in the ...
null Dolny +3 more
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2021 IEEE International Reliability Physics Symposium (IRPS), 2021
Bipolar degradation continues to be a key issue that should be taken into account in 4H-SiC devices using bipolar operation modes. The generation and expansion of recombination-induced stacking faults (SFs) in 4H-SiC devices results in a forward-voltage drift, which has been widely discussed in the literature.
Shanmuganathan Palanisamy +5 more
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Bipolar degradation continues to be a key issue that should be taken into account in 4H-SiC devices using bipolar operation modes. The generation and expansion of recombination-induced stacking faults (SFs) in 4H-SiC devices results in a forward-voltage drift, which has been widely discussed in the literature.
Shanmuganathan Palanisamy +5 more
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Gate-Controlled Reverse Recovery for Characterization of LDMOS Body Diode
IEEE Electron Device Letters, 2014Reverse recovery behavior is a useful tool for monitoring lifetime variations in the body diode of power MOSFETs. However, correct interpretation of the laterally diffused MOSFET (LDMOS) reverse recovery is challenging and requires special attention. This is due to the fact that the stored charges in the LDMOS drift region can flow from two different ...
Arash Elhami Khorasani +2 more
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Bipolar reverse recovery behavior of the body-diode of a SiC JFET
2013 15th European Conference on Power Electronics and Applications (EPE), 2013This paper investigates the parasitic turn on during the reverse recovery of the body diode of the normally on 1200 V SiC JFET. During the reverse recovery flows a hole current through the space charge region. The hole current is increasing the charge in the space charge region and the gradient of electrical field increases.
Tobias Appel, Hans-Gunter Eckel
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