Results 61 to 70 of about 14,686 (140)
High voltage systems (tube-type microwave)/low voltage system (solid-state microwave) power distribution [PDF]
, 1980 SPS satellite power distribution systems are described. The reference Satellite Power System (SPS) concept utilizes high-voltage klystrons to convert the onboard satellite power from dc to RF for transmission to the ground receiving station.
Nussberger, A. A., Woodcock, G. R.
core +1 more source
Mgb2 Nonlinear Properties Investigated under Localized High RF Magnetic Field Excitation
, 2012 In order to increase the accelerating gradient of Superconducting Radio Frequency (SRF) cavities, Magnesium Diboride (MgB2) opens up hope because of its high transition temperature and potential for low surface resistance in the high RF field regime ...
B. G. Ghamsari +7 more
core +3 more sources
On the Effects of High-K Dielectric RESURF in High-Voltage Bulk FinFETs
IEEE Journal of the Electron Devices Society, 2020 High-K dielectric reduced surface field (RESURF) effects in high-voltage bulk FinFETs through three-dimensional simulation are discussed in this paper for the first time. Compared to a planar gate LDMOSFET where the length of the drift region is the same,
Chia-Hui Cheng +4 more
doaj +1 more source
A Trench LDMOS Improved by Quasi Vertical Super Junction and Resistive Field Plate
IEEE Journal of the Electron Devices Society, 2019 An improved trench lateral double-diffused MOSFET (T-LDMOS) is proposed. It has a quasi vertical super junction (QVSJ) drift region and adopts a resistive field plate (RFP) to help QVSJ satisfy charge-balance.
Junji Cheng +4 more
doaj +1 more source
Nanoscale Research Letters, 2019 An ultra-low specific on-resistance (R on,sp) lateral double-diffused metal-oxide-semiconductor transistor (LDMOS) with enhanced dual-gate and partial P-buried layer is proposed and investigated in this paper.
Zhuo Wang +5 more
doaj +1 more source
Applied Physics ExpressGaN power high electron mobility transistors (HEMTs) with a breakdown voltage (BV) exceeding 2500 V at I _DSS leakage of 1 μ A mm ^−1 grown by plasma-assisted MBE (PA-MBE) on sapphire was demonstrated with a single field plate structure.
Zhichao Yang +10 more
doaj +1 more source
Photon-actuated multiplex switch development [PDF]
Photon actuated solid state electronic switch for multiplexing low level analog ...
Bergens, D.
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Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment
Power Electronic Devices and ComponentsIn this study, the impact of surface treatment by TMAH and HF on the electrical characteristics of GaN-on-GaN Schottky diodes is examined through I–V and C–V characterizations.
Vishwajeet Maurya +10 more
doaj +1 more source
Diode step stress program for JANTX1N4570A [PDF]
The effect of power/temperature step stress when applied to a variety of semiconductor devices was evaluated. Performance of the zener diode JANTX1N4570A manufactured by Siemens and Motorola is reported.
core +1 more source
Numerical Analysis of the LDMOS With Side Triangular Field Plate
IEEE Journal of the Electron Devices Society, 2019 A Lateral Double-diffused Metal Oxide Semiconductor (LDMOS) with side triangular field plate (STFP) is proposed for improving the breakdown voltage (BV) and reducing the specific on-resistance (Ron,sp). The main feature of the novel LDMOS is the STFPs at
Jiafei Yao +5 more
doaj +1 more source