Results 91 to 100 of about 1,566 (190)

Influence of the electrode material on the performance of BTBT-based thin-film transistors

, 2022
4 S.In the course of the digitalization, the scientific community and the industry are aiming at the low-cost integration of high performance digital circuits on large-area substrates to upgrade everyday objects with new functionalities.
Hilleringmann, Ulrich, Petrov, D., Meyers, T., Vidor, F.F., Reker, J.   +4 more
core  

Monolayer Transition Metal Dichalcogenide Channel-Based Tunnel Transistor

IEEE Journal of the Electron Devices Society, 2013
We investigate the gate controlled direct band-to-band tunneling (BTBT) current in monolayer transition-metal dichalcogenide (MX2) channel-based tunnel field effect transistor (TFET).
Ram Krishna Ghosh, Santanu Mahapatra
doaj   +1 more source

Ternary CMOS Compact Model for Low Power On-Chip Memory Applications

IEEE Journal of the Electron Devices Society
In this work, we present a tunneling based ternary CMOS (T-CMOS) compact model for low power ternary-SRAM (T-SRAM) design using CMOS technology. By designing compact model parameters of band-to-band tunneling current $(I_{\mathrm { BTBT}})$ according ...
Young-Eun Choi, Woo-Seok Kim, Myoung Kim, Junyoung Park, Min Woo Ryu, Kyung Rok Kim   +5 more
doaj   +1 more source

Impact of BTBT, stress and interface charge on optimum Ge in SiGe pMOS for low power applications

, 2016
The feasibility of medium-high fraction SiGe based FinFET pMOS devices for a sub-10nm CMOS logic technology from a performance (IEFF @ fixed IOFF) standpoint is evaluated, considering three key device aspects-stress, band-to-band-tunneling (BTBT), and ...
Jin, S., Z. Wu, U. H. Kwon, Jeong, Changwook, H. W. Kim, Pham, A.T., K. H. Lee, Maeda, S., Choi, W.S., H. K. Noh, W. S. Choi, K. K. Bhuwalka, S. Dhar, Kwon, U.H., J. C. Kim, C. W. Jeong, Kim, H.W., W. S. Lee, S. Maeda, Kim, S.J., Lee, W.S., S. Jin, Lee, K.H., S. J. Kim, Bhuwalka, K.K., Noh, H.K., Kim, J.C., Wu, Z., A. T. Pham, Dhar, S.   +29 more
core   +1 more source

Ab Initio Simulations of Interfaces between SAM-Modified Gold Electrodes and n‑Type or p‑Type Organic Semiconductors Based on the Benzothieno-Benzothiophene (BTBT) Architecture

, 2020
We have investigated the atomistic structure and the electronic properties of selected metal–organic interfaces, commonly found in organic electronic devices, using ab initio simulations based on density functional theory.
Giuseppe Mattioli, Mauro Sassi, Luca Beverina (1934071), Sara Mattiello (3695089), Mauro Sassi (1568323), Luca Beverina, Giuseppe Mattioli (1664212), Sara Mattiello   +7 more
core   +1 more source

Dopingless 1T DRAM: Proposal, Design, and Analysis

IEEE Access, 2019
In this paper, we have proposed a dopingless 1T DRAM (DL-DRAM) that utilizes the charge plasma concept. The proposed device employs a misaligned double-gate architecture to store holes and differentiates between the two logic states.
Akhil James, Sneh Saurabh
doaj   +1 more source

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Scientific Reports, 2017
Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature.
Wolfgang A. Vitale, Emanuele A. Casu, Arnab Biswas, Teodor Rosca, Cem Alper, Anna Krammer, Gia V. Luong, Qing-T. Zhao, Siegfried Mantl, Andreas Schüler, A. M. Ionescu   +10 more
doaj   +1 more source

Ultrahigh Vacuum Self-Assembly of Rotationally Commensurate C8-BTBT/MoS₂/Graphene Mixed-Dimensional Heterostructures

, 2019
Mixed-dimensional van der Waals heterostructures combine the advantages of nanomaterials with qualitatively distinct properties such as the extended bandstructures and high charge carrier mobilities of inorganic two-dimensional materials and the discrete
Xiaolong Liu (265696), Mark C. Hersam (675285), Antonio Facchetti (1331742), Tobin J. Marks (1275348), Hakan Usta (1715368), Itamar Balla (1424227), Vinod K. Sangwan (1298529)   +6 more
core   +1 more source

Tunable Doping Enabled by Dielectric Screening Layer in Carbon Nanotube Transistors

Advanced Electronic Materials
Doping is a crucial technique for achieving high‐performance carbon nanotube (CNT) metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). However, excessive doping in the extension region can induce significant band‐to‐band tunneling (BTBT ...
Chen‐Han Chou, Han‐Yi Huang, Hsin‐Yuan Chiu, Guan‐Zhen Wu, Bo‐Heng Liu, Chien‐Wei Chen, Chi‐Chung Kei, Chao‐Hsin Chien   +7 more
doaj   +1 more source

The role of H-bonds in the solid state organization of [1]benzothieno[3,2-b] [1]benzothiophene (BTBT) structures: Bis(hydroxy-hexyl)-BTBT, as a functional derivative offering efficient air stable organic field effect transistors (OFETs)

, 2016
The study of a [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivative decorated with hexyl chains functionalized with hydroxyl end groups is reported. A rapid and inexpensive functionalization of the BTBT in positions 2 and 7 has been developed.
Geerts, Yves, Dautel, Olivier, J., Roche, Gilles, Clevers, Simon, Castet, Frederic, Wantz, Guillaume, Dautel, Olivier,, Roche, Gilles H, Moreau, Joël, Tsai, Yu-Tang, Thuau, Damien, Moreau, Joel J.E., Dautel, Olivier   +12 more
core   +1 more source