Results 81 to 90 of about 1,566 (190)

Toward 4R Electronics: Liquid‐Metal‐Enabled Thin Film, and Field‐Effect Transistors for Sustainability and E‐Waste Reduction

open access: yesAdvanced Materials Technologies, Volume 11, Issue 7, 6 April 2026.
The 4R principle—Resilience, Repairability, Recyclability, and Renewability—enables sustainable liquid‐metal transistors. LM materials provide stretchable, damage‐tolerant architectures, allow rapid circuit repair, permit full material recovery through dissolution, and support renewable fabrication cycles, forming a closed‐loop pathway toward ...
Elahe Parvini, Abdollah Hajalilou
wiley   +1 more source

Circuit Level Modeling of Electrically Doped Adenine–Thymine Nanotube Based Field Effect Transistor

open access: yesIEEE Access, 2020
We investigate the gate-controlled, electrically doped tunnelling current in Adenine-Thymine heterojunction nanotube-based Field Effect Transistor (FET). This analytical model FET is designed by Density Functional Theory (DFT) and Non-Equilibrium Green's
Debarati Dey   +4 more
doaj   +1 more source

Design strategy for air-stable organic semiconductors applicable to high-performance field-effect transistors

open access: yesScience and Technology of Advanced Materials, 2007
Electronic structure of air-stable, high-performance organic field-effect transistor (OFET) material, 2,7-dipheneyl[1]benzothieno[3,2-b]benzothiophene (DPh-BTBT), was discussed based on the molecular orbital calculations.
Kazuo Takimiya et al
doaj  

Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor

open access: yesIEEE Open Journal of Nanotechnology, 2020
In this paper, using device simulations, we investigate electrical characteristics of a tunnel field-effect transistor (TFET) in which band-to-band tunneling (BTBT) occurs dominantly within the channel, rather than at source-channel junction.
Shelly Garg, Sneh Saurabh
doaj   +1 more source

Organic Transistor‐Based Neuromorphic Electronics and Their Recent Applications

open access: yesSmall Methods, Volume 10, Issue 7, 6 April 2026.
This review highlights recent progress in organic neuromorphic electronics, showing how organic semiconductors enable synaptic and neuronal functions with low power, mechanical flexibility, and biocompatibility. By bridging materials, devices, and systems, organic platforms are accelerating brain‐inspired computing toward applications in artificial ...
Ziru Wang, Feng Yan
wiley   +1 more source

Cyclometalated Pt(II) Complex Appending a Pyridyl Ligand with a Benzothienobenzothiophene (BTBT) Unit: Synthesis, Photophysical Properties, and an Unusual Shift of Centered Ligands in Excited States

open access: yes
A cyclometalated Pt(II) complex was synthesized by appending a pyridyl ligand containing a benzothienobenzothiophene (BTBT) unit, which is a well-known small organic molecule semiconductor. The target complex [Pt(ppy)(BTBT-py)Cl] (2) was characterized by
Keishiro Tahara (829840)   +6 more
core   +2 more sources

Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures

open access: yesIEEE Journal of the Electron Devices Society, 2018
2-D transition metal dichalcogenides (TMDs) are promising materials for CMOS application due to their ultrathin channel with excellent electrostatic control.
Yashwanth Balaji   +10 more
doaj   +1 more source

Electrochemical Anodization as a Reliable and Sustainable Processes for Gate Dielectrics in Organic Thin‐Films Transistors

open access: yesChemElectroChem, Volume 13, Issue 4, 17 February 2026.
Electrochemical anodization enables precise, self‐aligned formation of robust oxide dielectrics under mild conditions. This concept explores its role in advancing low‐voltage, high‐frequency organic transistors, highlighting how this scalable and sustainable technique may reshape flexible electronics, from planar organic thin‐film transistors to ...
Juan Wang, Amric Bonil, Hans Kleemann
wiley   +1 more source

Steep switching in trimmed-gate tunnel FET

open access: yesAIP Advances, 2018
We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a “channel”, which ...
Hidehiro Asai   +5 more
doaj   +1 more source

Investigation of the Scalability of Emerging Nanotube Junctionless FETs Using an Intrinsic Pocket

open access: yesIEEE Journal of the Electron Devices Society, 2019
The detrimental lateral band-to-band tunneling (L-BTBT) governing the OFF-state performance of the junctionless (JL) FETs is more pronounced in emerging Nanotube (NT) transistor architectures. This restricts the scaling of NT JLFETs irrespective of their
Aakash Kumar Jain   +2 more
doaj   +1 more source

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