Results 81 to 90 of about 1,783 (196)

From Doping to Polarity Control: Transport Switching in Silicon Nanowire Field‐Effect Transistors

physica status solidi (a), Volume 223, Issue 15, 5 August 2026.
Junctionless nanowire transistors (JNTs) based on phosphorus‐doped silicon demonstrate electrostatic polarity control, ambipolar and unipolar modes, and scalable short‐channel performance. Tunable gate configurations and doping levels enable high on/off ratios and CMOS compatibility, highlighting JNTs as promising candidates for reconfigurable, next ...
Sayantan Ghosh, Alessandro Puddu, Slawomir Prucnal, Sebastian Lehmann, Kornelius Nielsch, Yordan M. Georgiev, Ahmad Echresh, Artur Erbe   +7 more
wiley   +1 more source

Tunneling Transistors Based on MoS₂/MoTe₂ Van der Waals Heterostructures

IEEE Journal of the Electron Devices Society, 2018
2-D transition metal dichalcogenides (TMDs) are promising materials for CMOS application due to their ultrathin channel with excellent electrostatic control.
Yashwanth Balaji, Quentin Smets, Cesar Javier Lockhart De La Rosa, Anh Khoa Augustin Lu, Daniele Chiappe, Tarun Agarwal, Dennis H. C. Lin, Cedric Huyghebaert, Iuliana Radu, Dan Mocuta, Guido Groeseneken   +10 more
doaj   +1 more source

Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor

IEEE Open Journal of Nanotechnology, 2020
In this paper, using device simulations, we investigate electrical characteristics of a tunnel field-effect transistor (TFET) in which band-to-band tunneling (BTBT) occurs dominantly within the channel, rather than at source-channel junction.
Shelly Garg, Sneh Saurabh
doaj   +1 more source

Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors

Advanced Materials Interfaces, Volume 13, Issue 16, 18 August 2026.
We systematically investigate bandgap‐dependent BTBT in SWCNT transistors by comparing wide‐bandgap (6,5) (Eg≈1.13 eV), medium‐bandgap HiPco, and narrow‐bandgap Arc‐discharge (Eg≈0.59 eV) SWCNT networks. The narrow‐bandgap networks show stronger BTBT, higher off‐state leakage, and lower on/off ratio, while wide‐bandgap (6,5) devices suppress BTBT and ...
Yuxiang Wei, Yimin Lei, Peixian Li, Hong Wang, Meisen Yi, Qing Zhu, Jiejie Zhu, Zhen Zhang, Yang Yang, Xiaohua Ma, Yue Hao   +10 more
wiley   +1 more source

Influence of the electrode material on the performance of BTBT-based thin-film transistors

, 2022
4 S.In the course of the digitalization, the scientific community and the industry are aiming at the low-cost integration of high performance digital circuits on large-area substrates to upgrade everyday objects with new functionalities.
Hilleringmann, Ulrich, Petrov, D., Meyers, T., Vidor, F.F., Reker, J.   +4 more
core   +1 more source

Steep switching in trimmed-gate tunnel FET

AIP Advances, 2018
We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a “channel”, which ...
Hidehiro Asai, Takahiro Mori, Takashi Matsukawa, Junichi Hattori, Kazuhiko Endo, Koichi Fukuda   +5 more
doaj   +1 more source

Investigation of the Scalability of Emerging Nanotube Junctionless FETs Using an Intrinsic Pocket

IEEE Journal of the Electron Devices Society, 2019
The detrimental lateral band-to-band tunneling (L-BTBT) governing the OFF-state performance of the junctionless (JL) FETs is more pronounced in emerging Nanotube (NT) transistor architectures. This restricts the scaling of NT JLFETs irrespective of their
Aakash Kumar Jain, Jaspreet Singh, Mamidala Jagadesh Kumar   +2 more
doaj   +1 more source

Electron‐Wave Interference in Zener Tunneling Induced by Dopant Clusters in Silicon pn Junctions

Advanced Quantum Technologies, Volume 9, Issue 7, July 2026.
Current oscillations are revealed in the Zener tunneling regime of Si nanoscale pn junctions and are attributed to the interference of coherent electron‐waves in band‐to‐band tunneling transport. Temperature dependence, simulations of random dopant distributions, and numerical interference calculations collectively demonstrate that the interference ...
Daris Alfafa, Michiharu Tabe, Yukinori Ono, Arief Udhiarto, Daniel Moraru   +4 more
wiley   +1 more source

Monolayer Transition Metal Dichalcogenide Channel-Based Tunnel Transistor

IEEE Journal of the Electron Devices Society, 2013
We investigate the gate controlled direct band-to-band tunneling (BTBT) current in monolayer transition-metal dichalcogenide (MX2) channel-based tunnel field effect transistor (TFET).
Ram Krishna Ghosh, Santanu Mahapatra
doaj   +1 more source

Quasi-2D Hybrid Perovskite Formation Using Benzothieno[3,2-b]Benzothiophene (BTBT) Ammonium Cations: Substantial Cesium Lead(II) Iodide Black Phase Stabilization

, 2022
3D hybrid perovskites (APbX3) have made a significant impact on the field of optoelectronic materials due to their excellent performance combined with facile solution deposition and up-scalable device fabrication. Nonetheless, these materials suffer from
Denis, Paul Henry (author), Wei, Z. (author), Gielen, Sam (author), Grozema, F.C. (author), Mertens, Martijn (author), Mertens, Sigurd (author), Van Landeghem, Melissa (author), Maufort, Arthur (author), Van Gompel, Wouter T.M. (author)   +8 more
core   +1 more source