Results 61 to 70 of about 809 (169)

Interface Segmentation Approach (InSeAp) on TCAD for Statistical Analysis of Interface Trap Spatial Variations in TFETs

IEEE Access
This work proposes a methodology to conduct statistical analyses of variation in spatial location and concentration of gate oxide/ semiconductor interface traps taking the example of a p-i-n silicon-on-insulator (SOI) tunnelling field-effect transistor ...
Anirudh Koteshwar, Shanidul Hoque, Deepjyoti Deb, Rupam Goswami   +3 more
doaj   +1 more source

Designed Lewis Acid–Base Passivation for High Performance Perovskite Solar Cells

Advanced Functional Materials, Volume 36, Issue 51, 25 June 2026.
ABSTRACT Silicon's high cost and long energy payback time remain major barriers to the global expansion of solar power. In contrast, metal–halide perovskites offer abundant, solution‐processable absorbers, and have achieved efficiencies of 25%–30%, positioning them as strong competitors to silicon.
Afna Manaf, Hiba Shahulhameed, Bhabani Sankar Swain, Shengzhong (Frank) Liu, Adel Najar   +4 more
wiley   +1 more source

Circuit Level Modeling of Electrically Doped Adenine–Thymine Nanotube Based Field Effect Transistor

IEEE Access, 2020
We investigate the gate-controlled, electrically doped tunnelling current in Adenine-Thymine heterojunction nanotube-based Field Effect Transistor (FET). This analytical model FET is designed by Density Functional Theory (DFT) and Non-Equilibrium Green's
Debarati Dey, Debashis De, Ferial Ghaemi, Ali Ahmadian, Luqman Chuah Abdullah   +4 more
doaj   +1 more source

Topological Point Defects in SmC* Liquid Crystals Under Mechanical Disturbance

Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.
Tangetial air jet shear inducess island formation and nucleates topological point defects in uniform SmC films. Island bounded by edge dislocation loops shrink and transform into isolated point defects under continued shear. Mechanical perturbatio provides a controllable route for defect engineering in smectric liquid crystal thin films.
Gunganist Kongklad, Vandana Molahalli, Apichart Pattanaporkratana, Nattaporn Chattham   +3 more
wiley   +1 more source

Design strategy for air-stable organic semiconductors applicable to high-performance field-effect transistors

Science and Technology of Advanced Materials, 2007
Electronic structure of air-stable, high-performance organic field-effect transistor (OFET) material, 2,7-dipheneyl[1]benzothieno[3,2-b]benzothiophene (DPh-BTBT), was discussed based on the molecular orbital calculations.
Kazuo Takimiya et al
doaj  

Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor

IEEE Open Journal of Nanotechnology, 2020
In this paper, using device simulations, we investigate electrical characteristics of a tunnel field-effect transistor (TFET) in which band-to-band tunneling (BTBT) occurs dominantly within the channel, rather than at source-channel junction.
Shelly Garg, Sneh Saurabh
doaj   +1 more source

Progress in Strain Engineering of 2D‐Integrated Heterostructures for Ultrasensitive Sensors

Advanced Science, Volume 13, Issue 33, 15 June 2026.
 . ABSTRACT Two‐dimensional (2D) integrated heterostructures have emerged as a cornerstone in the advancement of next‐generation sensor technologies. These heterostructures, which combine materials with different dimensionalities, have led to significant breakthroughs in sensing performance and device integration.
That Buu Ton, Tuan Sang Tran, Duc Khanh Tran, Van Thanh Dau, Dzung Viet Dao   +4 more
wiley   +1 more source

Tunneling Transistors Based on MoS₂/MoTe₂ Van der Waals Heterostructures

IEEE Journal of the Electron Devices Society, 2018
2-D transition metal dichalcogenides (TMDs) are promising materials for CMOS application due to their ultrathin channel with excellent electrostatic control.
Yashwanth Balaji, Quentin Smets, Cesar Javier Lockhart De La Rosa, Anh Khoa Augustin Lu, Daniele Chiappe, Tarun Agarwal, Dennis H. C. Lin, Cedric Huyghebaert, Iuliana Radu, Dan Mocuta, Guido Groeseneken   +10 more
doaj   +1 more source

Electronic Structure Effects During Cooperative Phase Transitions in Organic Semiconductor Single Crystals

Advanced Electronic Materials, Volume 12, Issue 12, 22 June 2026.
A cooperative phase transition in the organic semiconductor ditBu‐BTBT crystal around 70°C reorganizes molecular structure and dynamics, altering its electronic properties. Soft x‐ray reflectivity and optical spectroscopy reveal shifts in electronic resonances and a widening of the optical bandgap. The transition reduces intermolecular interactions and
Giulia Giovanelli, Alessandro Lodi, Mario Felipe Mery Duarte, Angelo Giglia, Nicola Mahne, M. Alex West, Josephine L. Hastings, Yves Henri Geerts, Michael T. Ruggiero, Luca Catalano, Luca Pasquali   +10 more
wiley   +1 more source

Steep switching in trimmed-gate tunnel FET

AIP Advances, 2018
We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a “channel”, which ...
Hidehiro Asai, Takahiro Mori, Takashi Matsukawa, Junichi Hattori, Kazuhiko Endo, Koichi Fukuda   +5 more
doaj   +1 more source