Results 71 to 80 of about 1,566 (190)

Greek ΜΝΗΣΘΗ and Aramaic DKYR in the Near East: A Comparative Epigraphic Study

Arabian Archaeology and Epigraphy, EarlyView.
ABSTRACT Past studies of graffiti containing the word ΜΝΗΣΘΗ have never fully established its intrinsic meaning. However, due to the existence of the Aramaic term DKYR, which carries a seemingly identical meaning to ΜΝΗΣΘΗ, in similar contexts in the Roman Near East, a comparison between both words is possible. Four distinct sites where the coexistence
Sebastien Mazurek
wiley   +1 more source

Topological Point Defects in SmC* Liquid Crystals Under Mechanical Disturbance

Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.
Tangetial air jet shear inducess island formation and nucleates topological point defects in uniform SmC films. Island bounded by edge dislocation loops shrink and transform into isolated point defects under continued shear. Mechanical perturbatio provides a controllable route for defect engineering in smectric liquid crystal thin films.
Gunganist Kongklad, Vandana Molahalli, Apichart Pattanaporkratana, Nattaporn Chattham   +3 more
wiley   +1 more source

SiGe-Surrounded Bitline Structure for Enhancing 3D NAND Flash Erase Speed

Applied Sciences
Three-dimensional NAND Flash has adopted the cell-over-peripheral (COP) structure to increase storage density. Unlike the conventional structure, the COP structure cannot directly increase the channel potential via substrate bias during the erase ...
Dohyun Kim, Wonbo Shim
doaj   +1 more source

Transient phases during fast crystallization of organic thin films from solution

APL Materials, 2016
We report an in situ microbeam grazing incidence X-ray scattering study of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) organic semiconductor thin film deposition by hollow pen writing.
Jing Wan, Yang Li, Jeffrey G. Ulbrandt, Detlef-M. Smilgies, Jonathan Hollin, Adam C. Whalley, Randall L. Headrick   +6 more
doaj   +1 more source

Progress in Strain Engineering of 2D‐Integrated Heterostructures for Ultrasensitive Sensors

Advanced Science, Volume 13, Issue 33, 15 June 2026.
 . ABSTRACT Two‐dimensional (2D) integrated heterostructures have emerged as a cornerstone in the advancement of next‐generation sensor technologies. These heterostructures, which combine materials with different dimensionalities, have led to significant breakthroughs in sensing performance and device integration.
That Buu Ton, Tuan Sang Tran, Duc Khanh Tran, Van Thanh Dau, Dzung Viet Dao   +4 more
wiley   +1 more source

Quasi-2D Hybrid Perovskite Formation Using Benzothieno[3,2-b]Benzothiophene (BTBT) Ammonium Cations: Substantial Cesium Lead(II) Iodide Black Phase Stabilization

, 2022
3D hybrid perovskites (APbX3) have made a significant impact on the field of optoelectronic materials due to their excellent performance combined with facile solution deposition and up-scalable device fabrication. Nonetheless, these materials suffer from
Denis, Paul Henry (author), Wei, Z. (author), Gielen, Sam (author), Grozema, F.C. (author), Mertens, Martijn (author), Mertens, Sigurd (author), Van Landeghem, Melissa (author), Maufort, Arthur (author), Van Gompel, Wouter T.M. (author)   +8 more
core   +1 more source

Neuromorphic Motor Control with Electrolyte‐Gated Organic Synaptic Transistors

Advanced Electronic Materials, Volume 12, Issue 9, 11 May 2026.
Electrolyte‐gated organic synaptic transistor (EGOST)‐based neuromorphic motor control systems integrate sensing, processing, and actuation by mimicking biological synapses. With advantages such as low power consumption, tunable synaptic plasticity, and mechanical flexibility, they are emerging as next‐generation core technologies for real‐time ...
Sung‐Hwan Kim, Ju‐Hyeok Yun, Hea‐Lim Park, Sin‐Hyung Lee   +3 more
wiley   +1 more source

Improving the Scalability of SOI-Based Tunnel FETs Using Ground Plane in Buried Oxide

IEEE Journal of the Electron Devices Society, 2019
Tunnel field-effect transistors (TFETs) are known to exhibit degraded electrical characteristics at smaller channel lengths, primarily due to direct source-to-drain band-to-band tunneling (BTBT).
Shelly Garg, Sneh Saurabh
doaj   +1 more source

Uniqueness of Supramolecular Systems

Macromolecular Materials and Engineering, Volume 311, Issue 5, May 2026.
Thanks to the variety of classes of supramolecular systems, they have been widely used in various applications. For example, in sensing devices, catalysis, and biomedicine. An example of a conventional photovoltaic material converted into electrical energy. Selective UV or NIR absorbers are required to produce materials with low or no coloration.
José A. Sánchez‐Fernández
wiley   +1 more source

Interface Segmentation Approach (InSeAp) on TCAD for Statistical Analysis of Interface Trap Spatial Variations in TFETs

IEEE Access
This work proposes a methodology to conduct statistical analyses of variation in spatial location and concentration of gate oxide/ semiconductor interface traps taking the example of a p-i-n silicon-on-insulator (SOI) tunnelling field-effect transistor ...
Anirudh Koteshwar, Shanidul Hoque, Deepjyoti Deb, Rupam Goswami   +3 more
doaj   +1 more source