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Modeling and Characterization of CMOS-Fabricated Capacitive Micromachined Ultrasound Transducers
Journal of Microelectromechanical Systems, 2011This paper describes the fabrication, characterization, and modeling of complementary metal-oxide-semiconductor (CMOS)-compatible capacitive micromachined ultrasound transducers (CMUTs). The transducers are fabricated using the interconnect and dielectric layers from a standard CMOS fabrication process.
Christopher B. Doody +4 more
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Thermoelectric power sensor for microwave applications by commercial CMOS fabrication
IEEE Electron Device Letters, 1997This work describes an implementation of a thermoelectric microwave power sensor fabricated through commercial CMOS process with additional maskless etching. The sensor combines micromachined coplanar waveguide and contact pads, a microwave termination which dissipates heat proportionally to input microwave power, and many aluminum-polysilicon ...
V. Milanovic +4 more
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An object-oriented design paradigm for standard CMOS fabrication technology
Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442), 2003The object-oriented design methodology has been manipulated to model the standard CMOS fabrication technology. Detecting and characterizing the objects and classes within the basic object-oriented features of encapsulation, inheritance and polymorphism, as well as discussing the model framework and model characterization has been the main pursuits of ...
B. Hekmatshoar, C. Lucas
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Ternary volatile random access memory based on heterogeneous graphene-CMOS fabric
Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures, 2012Graphene is an emerging nano-material that has garnered immense research interest due to its exotic electrical properties. It is believed to be a potential candidate for post-Si nanoelectronics due to high carrier mobility and extreme scalability.
Santosh Khasanvis +5 more
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2009
A novel method for fabricating the mechanical part of the “Millipede”, a MEMS-based scanning-probe data storage system, is reported. The proposed approach exploits a selective p-to-n HF-based electropolishing step, which allows to remove p-type silicon, used as a sacrificial layer, while leaving n-type silicon, exploited as structural material, un ...
BARILLARO, GIUSEPPE +2 more
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A novel method for fabricating the mechanical part of the “Millipede”, a MEMS-based scanning-probe data storage system, is reported. The proposed approach exploits a selective p-to-n HF-based electropolishing step, which allows to remove p-type silicon, used as a sacrificial layer, while leaving n-type silicon, exploited as structural material, un ...
BARILLARO, GIUSEPPE +2 more
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Understanding clustering of defects in a sub-0.5 μm CMOS fabricator
Proceedings International Conference on Microelectronic Test Structures, 2002Over two decades of bipolar-experience has previously alerted one to the fact that the extent of defect clustering, assumed in the CMOS yield models, may not hold for defects monitored on microelectronic test structures (MTS). Tracing the defect clustering from inline CMOS MTS, we now describe a viable yield prediction model using data from the various
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Double-sided CMOS fabrication technology
2001Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2001. ; Includes bibliographical references (p. 63-66). ; by Isaac Lauer. ; S.M.
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Critical need and future directions of SIMS depth profiling in CMOS fabrication
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2018The complementary metal-oxide-semiconductor (CMOS) industry continues to push the boundaries of what is possible. Along with this, secondary ion mass spectrometry (SIMS) depth profiling continues to support CMOS R&D and high volume manufacturing (due to its unparalleled sensitivity and detection limits over predefined volumes and within acceptable ...
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The Temperature Characteristics of Bipolar Transistors Fabricated in CMOS Technology
Sensors and Actuators A: Physical, 2000Gérard C M Meijer, Guijie Wang
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