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A New Approach for CMOS Fabrication of Microcantilever/Nanotip Systems for Probe-Storage Applications

2009
A novel method for fabricating the mechanical part of the “Millipede”, a MEMS-based scanning-probe data storage system, is reported. The proposed approach exploits a selective p-to-n HF-based electropolishing step, which allows to remove p-type silicon, used as a sacrificial layer, while leaving n-type silicon, exploited as structural material, un ...
BARILLARO, GIUSEPPE   +2 more
openaire   +1 more source

Understanding clustering of defects in a sub-0.5 μm CMOS fabricator

Proceedings International Conference on Microelectronic Test Structures, 2002
Over two decades of bipolar-experience has previously alerted one to the fact that the extent of defect clustering, assumed in the CMOS yield models, may not hold for defects monitored on microelectronic test structures (MTS). Tracing the defect clustering from inline CMOS MTS, we now describe a viable yield prediction model using data from the various
openaire   +1 more source

CMOS-Fabricated Piezo-Optomechanical Platform for Hyperfine Qubit Control

CLEO 2026
We describe all-CMOS-fabricated, piezo-optomechanical, acousto-optic photonic integrated circuits that convert high-power continuous-wave visible laser light to gigahertz-frequency amplitude-modulated signals that can provide gate operations for trapped-atom and ion qubits.
Jacob M. Freedman   +5 more
openaire   +1 more source

Frequency and Bandwidth Conversion with Integrated CMOS Fabricated Quantum Memory

CLEO 2026
We propose using a CMOS fabricated Raman quantum memory of interstitial nitrogen defects in silicon nitride for single photon frequency and bandwidth conversion. We show visible to telecom conversion is possible by using integrated waveguides.
Kathleen Oolman   +3 more
openaire   +1 more source

Double-sided CMOS fabrication technology

2001
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2001. ; Includes bibliographical references (p. 63-66). ; by Isaac Lauer. ; S.M.
openaire   +1 more source

Critical need and future directions of SIMS depth profiling in CMOS fabrication

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2018
The complementary metal-oxide-semiconductor (CMOS) industry continues to push the boundaries of what is possible. Along with this, secondary ion mass spectrometry (SIMS) depth profiling continues to support CMOS R&D and high volume manufacturing (due to its unparalleled sensitivity and detection limits over predefined volumes and within acceptable ...
openaire   +1 more source

The temperature characteristics of bipolar transistors fabricated in CMOS technology

Sensors and Actuators A: Physical, 2000
Gérard C M Meijer
exaly  

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