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CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-μm CMOS technology
IEEE Transactions on Electron Devices, 1998E Crabbe
exaly
On the Two-Step Nucleation in Internal Gettering for CMOS Fabrication Process
Solid State Phenomena, 1989J. Jablonski +2 more
openaire +1 more source
Ion-sensitive field-effect transistors fabricated in a commercial CMOS technology
Sensors and Actuators B: Chemical, 1999Angel Merlos +2 more
exaly
NEMS Switches Monolithically Fabricated on CMOS MIM Capacitors
Procedia Engineering, 2014Núria Barniol, Arantxa Uranga
exaly

