Results 131 to 140 of about 392,135 (196)
Some of the next articles are maybe not open access.
IEEE Electron Device Letters, 2021
This letter presents the first nano-gap microelectromechanical systems (MEMS) resonator based on a Metal-Insulator-Metal (MIM) capacitor structure in standard CMOS. We develop an improved mask-less post-CMOS process to chemically remove the thin aluminum
Hung-Yu Chen +2 more
semanticscholar +1 more source
This letter presents the first nano-gap microelectromechanical systems (MEMS) resonator based on a Metal-Insulator-Metal (MIM) capacitor structure in standard CMOS. We develop an improved mask-less post-CMOS process to chemically remove the thin aluminum
Hung-Yu Chen +2 more
semanticscholar +1 more source
An Ultrasensitive Cmos-Mems Tuned-Mass-Damper (Tmd) Based Voltmeter
IEEE/LEOS International Conference on Optical MEMS, 2022An ultrasensitive micromechanical voltmeter has been demonstrated, for the first time, using tuned-mass-damper (TMD) based mode-localized structure in a CMOS-MEMS process.
Pin-Chun Huang +3 more
semanticscholar +1 more source
Cmos-Mems Resonators with Sub-100-Nm Transducer Gap Using Stress Engineering
IEEE/LEOS International Conference on Optical MEMS, 2022A clamped-clamped beam (CC-beam) resonator based on a 0.35-μm 2-poly-4-metal CMOS-MEMS process platform with an unprecedented sub-100-nm structure-to-electrode gap has been demonstrated.
Hong-Sen Zheng +3 more
semanticscholar +1 more source
2007 IEEE International Symposium on Circuits and Systems (ISCAS), 2007
This paper describes the frequency mixing operation of a micro electro mechanical system device designed and fabricated in a CMOS commercial technology (AMS 0.35mum). The theory of the MEMS is summarized and a CMOS fully integrated MEMS is characterized as a mixer.
Joan Lluís Lopez +8 more
openaire +1 more source
This paper describes the frequency mixing operation of a micro electro mechanical system device designed and fabricated in a CMOS commercial technology (AMS 0.35mum). The theory of the MEMS is summarized and a CMOS fully integrated MEMS is characterized as a mixer.
Joan Lluís Lopez +8 more
openaire +1 more source
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2008
Silicon radio integration is currently limited by the ability to achieve high-Q filters on chip with the RF transistors. Furthermore, multi-terminal radio trends are driving the need for widely tunable filters. Progress on high-Q electrically-selectable CMOS-MEMS micromechanical filters and medium-Q widely tunable CMOS-MEMS LC filters is described ...
G. K. Fedder, T. Mukherjee
openaire +1 more source
Silicon radio integration is currently limited by the ability to achieve high-Q filters on chip with the RF transistors. Furthermore, multi-terminal radio trends are driving the need for widely tunable filters. Progress on high-Q electrically-selectable CMOS-MEMS micromechanical filters and medium-Q widely tunable CMOS-MEMS LC filters is described ...
G. K. Fedder, T. Mukherjee
openaire +1 more source
IEEE/LEOS International Conference on Optical MEMS, 2021
CMOS-MEMS pyroelectric detectors based on 12%-doped ScAlN are fabricated using 8-inch MEMS wafer technology and characterized. The ScAlN pyroelectric material is deposited at a low temperature of ~200oC. The results show D* as high as 4.3 x 107 (cm√Hz)/W
D. Ng +8 more
semanticscholar +1 more source
CMOS-MEMS pyroelectric detectors based on 12%-doped ScAlN are fabricated using 8-inch MEMS wafer technology and characterized. The ScAlN pyroelectric material is deposited at a low temperature of ~200oC. The results show D* as high as 4.3 x 107 (cm√Hz)/W
D. Ng +8 more
semanticscholar +1 more source
Microelectronics Reliability, 2000
Abstract Two case studies of packaging for sensor microsystems based on CMOS IC technology with post-CMOS micromachining and film deposition are presented. The first case includes a filter directly attached to the CMOS chip and a plastic ball grid array as first level packaging for CMOS integrated thermoelectric sensor arrays used for intrusion ...
Henry Baltes, Oliver Brand, Marc Waelti
openaire +1 more source
Abstract Two case studies of packaging for sensor microsystems based on CMOS IC technology with post-CMOS micromachining and film deposition are presented. The first case includes a filter directly attached to the CMOS chip and a plastic ball grid array as first level packaging for CMOS integrated thermoelectric sensor arrays used for intrusion ...
Henry Baltes, Oliver Brand, Marc Waelti
openaire +1 more source
Implementation of accelerometer in CMOS-MEMS
2010 5th International Microsystems Packaging Assembly and Circuits Technology Conference, 2010A fully-differential capacitive accelerometer is designed and implemented using TSMC 0.35μm 2P4M CMOS-MEMS process. The measured sensitivity is 53 mV/g.
Tsung-Chi Kuo +2 more
openaire +1 more source
A Sub-5mW Monolithic CMOS-MEMS Thermal Flow Sensing SoC With ±6 m/s Linear Range
IEEE Journal of Solid-State CircuitsThis article presents a complementary metal-oxide semiconductor (CMOS)-microelectromechanical system (MEMS) monolithic integrated thermal flow sensor system, which consists of a MEMS sensor with dual pairs of thermistors, a precise constant temperature ...
Wei Xu +8 more
semanticscholar +1 more source
Multi-harmonic phononic frequency comb generation in capacitive CMOS-MEMS resonators
Applied Physics LettersPhononic frequency combs (PFCs) have emerged as a pivotal technology in precision measurements and advanced signal processing, harnessing the power of discrete, evenly spaced frequency lines.
K. Bhosale, Sheng-Shian Li
semanticscholar +1 more source