Results 161 to 170 of about 392,135 (196)

CMOS-MEMS resonators and their applications

2013 Joint European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC), 2013
This paper reports on the recent progress of the high-Q integrated micromechanical resonator, oscillator, and filter using the “CMOS-MEMS technology” to enable monolithic integration of MEMS and IC. The paper scope covers three major parts, including (i) the fabrication technologies of the CMOS-MEMS resonators and their associated circuitry; (ii) the ...
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CMOS-MEMS novel resonator for filter tuning

2015 IEEE 58th International Midwest Symposium on Circuits and Systems (MWSCAS), 2015
Novel MEMS resonators are presented in this work, and were designed in CMOS process. The devices were fabricated and tested. The work shows the combined CMOS and MEMS process. The resonators are designed in Fixed -Fixed beam structure. Applications are low power temperature tuning filters, and temperature sensors.
Hasan Goktas, M. E. Zaghloul
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A Three-Dimensional Integrated Micro Calorimetric Flow Sensor in CMOS MEMS Technology

IEEE Sensors Letters, 2019
This article presents a 3-D integrated molybdenum (Mo) thermoresistive microcalorimetric flow sensor in a 0.18-μm CMOS MEMS technology. The sensor consists of a MEMS structure which is fabricated inside a sealed microchannel and a constant temperature ...
Wei Xu, Bo Wang, Mingzheng Duan, Moaaz Ahmed, A. Bermak, Yi-Kuen Lee   +5 more
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Efficiency modeling of a CMOS MEMS convective accelerometer

7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2012
This paper reports efficiency modeling using 3D FEM simulation of a convective accelerometer obtained by FSBM of a die fabricated using standard CMOS technology. In such sensors, best sensitivity is obtained by placing temperature detectors where air temperature is the most sensitive to acceleration. This will obviously depends on 3D effects.
Brahim Mezghani, Fares Tounsi, Mohamed Masmoudi, Ahmed Amine Rekik, Frédérick Mailly, Pascal Nouet   +5 more
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A sub-1G CMOS-MEMS accelerometer

2015 IEEE SENSORS, 2015
We report experimental evaluation results of a CMOS (complementary-metal-oxide semiconductor)-MEMS (microelectromechanical systems) accelerometer for sensing sub-1G (1G = 9.8 m/s2) acceleration. The sub-1G MEMS sensor has been successfully implemented on a 180-nm CMOS LSI (large scale integrated circuits) for the first time.
Daisuke Yamane, Toshifumi Konishi, Motohiro Takayasu, Hiroyuki Ito, Shiro Dosho, Noboru Ishihara, Hiroshi Toshiyoshi, Kazuya Masu, Katsuyuki Machida   +8 more
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CMOS-MEMS atomic force microscope

2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, 2011
We present a CMOS-MEMS atomic force microscope (AFM) with integrated 3-D MEMS actuation and 3-axis position sensing. CMOS driving and sensing electronics have been integrated in the same fabrication process. Our goal is to replace piezoelectric positioning systems which are bulky (leading to thermal drift and poor vibration immunity) and suffer from ...
N. Sarkar, R. R. Mansour, O. Patange, K. Trainor   +3 more
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Ultra-wideband CMOS-MEMS radio

2009 IEEE International Conference on Ultra-Wideband, 2009
Current ultrawideband (UWB) radios have several unsolved issues in front-end performance including difficult and expensive clock synthesizer designs, and power hungry baseband functions. In fact, the expected breakthrough of the very useful UWB technology has stalled since realized high bitrate integrated radios are much too expensive in the sense that
Esa Tiiliharju, Tero Koivisto, Janne Maunu, Nikolai Chekurovy, Ilkka Tittoneny   +4 more
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A CMOS-MEMS Thermoelectric Infrared Sensor

2010 International Conference on Electrical and Control Engineering, 2010
This paper presents a thermoelectric infrared (IR) sensor which comprise of an infrared detector and a readout circuitry. It is designed by TSMC 0.35 μm CMOS process with subsequent micromachining technology. The presented infrared sensing device can achieve the responsivity of 1277.92 V/W and time constant of 2.63 ms. The instrumentation amplifier (IA)
Hung-Yu Wang, Po-Yang Tsai, Chih-Yi Liu, Jyun-Jie Huang   +3 more
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Monolithically Integrated Bidirectional Flow Sensor and Stacked Temperature/Humidity Sensor Based on CMOS-Compatible MEMS Technology

IEEE Transactions on Instrumentation and Measurement
In this article, we present a monolithically integrated multifunctional sensor for respiratory applications, which consists of a bidirectional micro flow sensor with dual microheaters and a stacked microelectromechanical systems (MEMS) temperature ...
Wei Xu, Linze Hong, Xiaofang Pan, .. Izhar   +3 more
semanticscholar   +1 more source

CMOS MEMS

Proceedings of 1997 IEEE International Symposium on Circuits and Systems. Circuits and Systems in the Information Age ISCAS '97, 2002
H. Baltes, A. Haberli
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