Results 151 to 160 of about 2,007 (192)
High-Performance Carbon Nanotube Electronic Devices: Progress and Challenges. [PDF]
Micromachines (Basel)Zhang Z, Zhang N, Zhang Z.
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Design and simulation of a low-energy atomic silicon quantum-dot circuit with potential in internet of things applications. [PDF]
Sci RepRasmi H +4 more
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Modified vedic multiplier architecture using Nikhilam and Karatsuba algorithms with hybrid adders for enhanced performance. [PDF]
Sci RepA S, A S.
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Room Temperature Ionic Liquid-Gated Carbon Nanotube FETs for Stable Hydrogen Sensing at Elevated Temperatures. [PDF]
ACS OmegaLiu Y +5 more
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CNTFET Based Energy Efficient Full Adder
International Journal of Innovative Research in Science, Engineering and Technology, 2015 openaire +1 more source
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Journal of Computational Electronics, 2007
Based on the non-equilibrium Green’s function formalism we numerically studied gate-controlled tunneling carbon nanotube field-effect transistors. The effect of doping concentration on the performance of the device has been investigated. We show that an asymmetric doping profile can improve the Ion/Ioff ratio of the device improves.
Mahdi Pourfath +2 more
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Based on the non-equilibrium Green’s function formalism we numerically studied gate-controlled tunneling carbon nanotube field-effect transistors. The effect of doping concentration on the performance of the device has been investigated. We show that an asymmetric doping profile can improve the Ion/Ioff ratio of the device improves.
Mahdi Pourfath +2 more
openaire +1 more source
2020
In recent years, carbon nanotube (CNT) emerged as one of the promising materials that shows various advantages over silicon material (e.g., aggressive channel length scaling due to absence of mobility degradation, variable bandgap with single material, ultra-thin body device that is possible due to smaller diameter [1-3nm], and compatibility of CNT ...
Amandeep Singh +2 more
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In recent years, carbon nanotube (CNT) emerged as one of the promising materials that shows various advantages over silicon material (e.g., aggressive channel length scaling due to absence of mobility degradation, variable bandgap with single material, ultra-thin body device that is possible due to smaller diameter [1-3nm], and compatibility of CNT ...
Amandeep Singh +2 more
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CNTFET based radiation hardened latch
Australian Journal of Electrical and Electronics Engineering, 2021In this paper, a carbon nanotube field effect transistor (CNTFET) based single event upset (SEU) tolerant latch is proposed.
Shazia Shakeel, Naushad Alam
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Dissipative transport in CNTFETs
Journal of Computational Electronics, 2007Based on the non-equilibrium Green’s function formalism the performance of carbon nanotube field-effect transistors has been studied. The effects of elastic scattering and the impact of parameters of inelastic scattering, such as electron-phonon coupling strength and phonon energy, on the device performance are analyzed.
Mahdi Pourfath +2 more
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2020
As the feature size of device has been scaling down for many decades, conventional CMOS technology-based static random access memory (SRAM) has reached its limit due to significant leakage power. Therefore, carbon nanotube field effect transistor (CNTFET) can be considered most suitable alternative for SRAM.
Shashi Bala, Mamta Khosla, Raj Kumar
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As the feature size of device has been scaling down for many decades, conventional CMOS technology-based static random access memory (SRAM) has reached its limit due to significant leakage power. Therefore, carbon nanotube field effect transistor (CNTFET) can be considered most suitable alternative for SRAM.
Shashi Bala, Mamta Khosla, Raj Kumar
openaire +1 more source