Results 41 to 50 of about 2,007 (192)

A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors

, 2003
We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is attached to an ...
Datta, Supriyo, Guo, Jing, Lundstrom, Mark   +2 more
core   +1 more source

Interaction of solid organic acids with carbon nanotube field effect transistors [PDF]

, 2006
A series of solid organic acids were used to p-dope carbon nanotubes. The extent of doping is shown to be dependent on the pKa value of the acids. Highly fluorinated carboxylic acids and sulfonic acids are very effective in shifting the threshold voltage
Ali Afzali, Anantram, Avouris, Bradley, Chen, Christian Klinke, Collins, Covington, Derycke, Dukovic, Eberson, Freedman, Fuhrer, Heinze, Kazaoui, Kim, Klinke, Klinke, Mann, Martel, Martel, McBee, O’Connell, Phaedon Avouris, Radosavljevic, Shimauchi, Strano, Tans, Ventura   +28 more
core   +1 more source

Charge Transfer Induced Polarity Switching in Carbon Nanotube Transistors

, 2005
We probed the charge transfer interaction between the amine-containing molecules: hydrazine, polyaniline and aminobutyl phosphonic acid, and carbon nanotube field effect transistors (CNTFETs).
Afzali, Ali, Avouris, Phaedon, Chen, Jia, Klinke, Christian   +3 more
core   +1 more source

A Computational Study of Vertical Partial Gate Carbon Nanotube FETs

, 2007
A vertical partial gate carbon nanotube (CNT) field-effect transistor (FET), which is amenable to the vertical CNT growth process and offers the potential for a parallel CNT array channel, is simulated using a self-consistent atomistic approach.
Fodor, James, Guo, Jing, Yoon, Youngki
core   +1 more source

Feasible Device Architectures for Ultrascaled CNTFETs

IEEE Transactions on Nanotechnology, 2018
Feasible device architectures for ultrascaled carbon nanotubes field-effect transistors (CNTFETs) are studied down to 5.9 nm using a multiscale simulation approach covering electronic quantum transport simulations and numerical device simulations. Schottky-like and ohmiclike contacts are considered.
Anibal Pacheco-Sanchez, Florian Fuchs, Sven Mothes, Andreas Zienert, Jorg Schuster, Sibylle Gemming, Martin Claus   +6 more
openaire   +2 more sources

Towards Multi-Scale Modeling of Carbon Nanotube Transistors

, 2003
Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for
Anantam, M. P., Datta, Supriyo, Guo, Jing, Lundstrom, Mark   +3 more
core   +1 more source

Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET. [PDF]

, 2012
The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET).
Amaratunga Aj, Gehan, Lentaris, Georgios, Tan, Michael Loong Peng   +2 more
core   +4 more sources

Nanoarchitectonics for Non‐Volatile Ternary STDP Synapse Using Anti‐Ferroelectric Carbon Nanotube Devices

Advanced Electronic Materials, Volume 12, Issue 2, 21 January 2026.
A compact neuromorphic synapse is presented, coupling anti‐ferroelectric capacitors with carbon nanotube devices to realize a non‐volatile, ternary STDP learning circuit. A calibrated compact model employs the negative differential resistance effect for ternary latching in a non‐volatile fashion.
Mohammad Khaleqi Qaleh Jooq, Fereshteh Behbahani, Amirali Amirsoleimani, Mostafa Rahimi Azghadi, Saeed Afshar   +4 more
wiley   +1 more source

Low power area efficient self-gated flip flop: Design, implementation and analysis in emerging devices

Engineering and Applied Science Research, 2022
This study presents a novel CMOS self-gated flip flop for low power and area efficient applications. The low power operations are achieved by deactivating the clock signal when not required in the circuit.
Owais Ahmad Shah, Geeta Nijhawan, Imran Ahmed Khan   +2 more
doaj  

Field-effect transistors assembled from functionalized carbon nanotubes

, 2006
We have fabricated field effect transistors from carbon nanotubes using a novel selective placement scheme. We use carbon nanotubes that are covalently bound to molecules containing hydroxamic acid functionality.
Appenzeller J., Auvray S., Avouris, Avouris Ph., Bachtold A., Bahr J. L., Banerjee S., Bethune D. S., Bonard J. M., Chen J., Chen Z., Cheng C., Choi K. H., Collins P. G., Cui Y., Dai H., Derycke V., Duan X., Dyke C. A., Folkers J. P., Hannon J. B., Heald C. G. R., Huang Y., Iijima S., Javey A., Jin S., Johnston D. E., Kataura H., Klinke C., Kooi S. E., Lee S. W., Lee Y. S., Lin Y. M., Martel R., McEuen P. L., Mirkin C. A., Morales A. M., Niyogi S., Perebeinos V., Radosavljevic M., Spataru C. D., Wind S. J.   +41 more
core   +1 more source