Carbon Nanotube Detectors and Spectrometers for the Terahertz Range
Crystals, 2020 We present the compact unified charge control model (UCCM) for carbon nanotube field-effect transistors (CNTFETs) to enable the accurate simulation of the DC characteristics and plasmonic terahertz (THz) response in the CNTFETs.
Junsung Park +3 more
doaj +1 more source
Interaction of solid organic acids with carbon nanotube field effect transistors [PDF]
, 2006 A series of solid organic acids were used to p-dope carbon nanotubes. The extent of doping is shown to be dependent on the pKa value of the acids. Highly fluorinated carboxylic acids and sulfonic acids are very effective in shifting the threshold voltage
Ali Afzali +28 more
core +1 more source
Charge Transfer Induced Polarity Switching in Carbon Nanotube Transistors
, 2005 We probed the charge transfer interaction between the amine-containing molecules: hydrazine, polyaniline and aminobutyl phosphonic acid, and carbon nanotube field effect transistors (CNTFETs).
Afzali, Ali +3 more
core +1 more source
Ab initio study of the effect of water adsorption on the carbon nanotube field-effect transistor [PDF]
, 2006 We perform density-functional calculations to investigate the effect of adsorbed water molecules on carbon nanotubes (CNTs). Noting that the H2 O molecule has much wider energy gap than the CNT, we find that the charge transfer between them is negligible.
Hong, Suklyun +6 more
core +1 more source
A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors
, 2003 We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is attached to an ...
Datta, Supriyo +2 more
core +1 more source
A Computational Study of Vertical Partial Gate Carbon Nanotube FETs
, 2007 A vertical partial gate carbon nanotube (CNT) field-effect transistor (FET), which is amenable to the vertical CNT growth process and offers the potential for a parallel CNT array channel, is simulated using a self-consistent atomistic approach.
Fodor, James, Guo, Jing, Yoon, Youngki
core +1 more source
Feasible Device Architectures for Ultrascaled CNTFETs
IEEE Transactions on Nanotechnology, 2018 Feasible device architectures for ultrascaled carbon nanotubes field-effect transistors (CNTFETs) are studied down to 5.9 nm using a multiscale simulation approach covering electronic quantum transport simulations and numerical device simulations. Schottky-like and ohmiclike contacts are considered.
Anibal Pacheco-Sanchez +6 more
openaire +2 more sources
Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET. [PDF]
, 2012 The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET).
Amaratunga Aj, Gehan +2 more
core +4 more sources
Towards Multi-Scale Modeling of Carbon Nanotube Transistors
, 2003 Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for
Anantam, M. P. +3 more
core +1 more source
An Optimal Gate Design for the Synthesis of Ternary Logic Circuits [PDF]
, 2018 Department of Electrical EngineeringOver the last few decades, CMOS-based digital circuits have been steadily developed. However, because of the power density limits, device scaling may soon come to an end, and new approaches for circuit designs are ...
KANG, SEOKHYEONG +2 more
core +1 more source