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Scanner-specific separable models for computational lithography

SPIE Proceedings, 2008
The usage of conventional OPC models traditionally was confined to the specific process conditions at which the models were. Separable models for computational lithography (CL), including OPC and post-OPC layout verification, allow extrapolation of the calibrated model and accurate prediction at process conditions different from the exact settings ...
Stefan Hunsche   +5 more
openaire   +1 more source

Extreme Ultraviolet Multilayer Defect Compensation in Computational Lithography

Journal of Nanoscience and Nanotechnology, 2016
For the extreme ultraviolet (EUV) lithography, multilayer (ML) defects such as bump and pit defects can disrupt the phase of reflected field and degrade aerial images on wafer. In this paper, a defect printability and repair simulator (DPRS) is introduced to predict and repair the effect of ML defects in EUV aerial images.
openaire   +2 more sources

LithoBench: Benchmarking AI Computational Lithography for Semiconductor Manufacturing

Advances in Neural Information Processing Systems 36, 2023
Su Zheng   +4 more
openaire   +2 more sources

Optical and EUV projection lithography: A computational view

Microelectronic Engineering, 2015
Andreas Erdmann   +2 more
exaly  

ML for Computational Lithography: Practical Recipes

Proceedings of the 30th Asia and South Pacific Design Automation Conference
openaire   +1 more source

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