Results 1 to 10 of about 115 (105)
Metasurface Fabrication by Cryogenic and Bosch Deep Reactive Ion Etching [PDF]
Micromachines, 2021 The research field of metasurfaces has attracted considerable attention in recent years due to its high potential to achieve flat, ultrathin optical devices of high performance. Metasurfaces, consisting of artificial patterns of subwavelength dimensions,
Paul Thrane +2 more
exaly +6 more sources
Study of Cryogenic Unmasked Etching of “Black Silicon” with Ar Gas Additives [PDF]
ACS Omega, 2022 The influence of Ar gas additives on ≪black silicon≫ formation is shown in this work. The way to achieve the conical shape of Si texture using low Ar dilution is demonstrated. Also, a possibility of silicon nanowire width reduction keeping a high density of array is shown. No damage to the Si structure caused by Ar plasma was detected. The introduction
Ekaterina A. Vyacheslavova +7 more
doaj +3 more sources
Micro and Nano Engineering, 2018 Cryogenic plasma deep-etching for silicon sub-micron structures was studied with the use of modified poly(styrene) (PS) perforated masks obtained from laterally phase separated PS and poly (lactic acid) PLA blend thin films.
Rémi Dussart +2 more
exaly +3 more sources
Chemistry in Cryogenic Etching: A Tutorial
Plasma Chemistry and Plasma ProcessingAbstract Cooling the substrate to stimulate chemical reactions can seem rather counterintuitive. However, this is one of the advantages often observed in plasma cryogenic etching. This article discusses the interactions between plasma and the surface at low temperature. It begins by reviewing the fundamental theories of adsorption as applied to
Rémi Dussart
exaly +2 more sources
Techniques of cryogenic reactive ion etching in silicon for fabrication of sensors [PDF]
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2009 Cryogenic etching of silicon, using an inductively coupled plasma reactive ion etcher (ICP-RIE), has extraordinary properties which can lead to unique structures difficult to achieve using other etching methods. In this work, the authors demonstrate the application of ICP-RIE techniques which capitalize on the cryogenic properties to create different ...
M David Henry, Scherer Axel
exaly +3 more sources
Cryogenic etching of porous material [PDF]
Acta Physica Sinica, 2021 With the shrinkage of chip feature sizes, porous materials are widely used in microelectronics. However, they are facing severe challenges in plasma etching, as the reactive radicals can diffuse into the interior of material and damage the material, which is called plasma induced damage.
Quan-Zhi Zhang +3 more
openaire +1 more source
Comparison between Bosch and STiGer Processes for Deep Silicon Etching
Micromachines, 2021 The cryogenic process is well known to etch high aspect ratio features in silicon with smooth sidewalls. A time-multiplexed cryogenic process, called STiGer, was developed in 2006 and patented.
Thomas Tillocher +5 more
doaj +1 more source
Micromachines, 2023 Micro-optical gyroscopes (MOGs) place a range of components of the fiber-optic gyroscope (FOG) onto a silicon substrate, enabling miniaturization, low cost, and batch processing.
Yuyu Zhang +9 more
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Cryogenic Electron Beam Induced Chemical Etching [PDF]
ACS Applied Materials & Interfaces, 2014 Cryogenic cooling is used to enable efficient, gas-mediated electron beam induced etching (EBIE) in cases where the etch rate is negligible at room and elevated substrate temperatures. The process is demonstrated using nitrogen trifluoride (NF3) as the etch precursor, and Si, SiO2, SiC, and Si3N4 as the materials volatilized by an electron beam ...
Aiden A, Martin, Milos, Toth
openaire +2 more sources
Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption
Scientific Reports, 2021 Cryogenic Atomic Layer Etching (cryo-ALE) of SiO2 based on alternating a C4F8 molecule physisorption step and an argon plasma step, has been enhanced thanks to a better understanding of the mechanism. First, we used Quadrupole Mass spectrometry (QMS) and
G. Antoun +5 more
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