Results 21 to 30 of about 17,122 (236)

Perspective Method of Betavoltaic Converter Creation [PDF]

Журнал нано- та електронної фізики, 2016
Some results on planar diode structure creation by the method of a plasma-immersion ion implantation is presented in this paper. Obtained leakage current ~ 1 uA/cm2 at reverse voltage – 1 V.
K.V. Rudenko, A.V. Miakonkih, A.E. Rogojin, S.V. Bogdanov, E.T. Lelekov, V.G. Sidorov, P.V. Zelenkov   +6 more
doaj   +1 more source

Versatilely tuned vertical silicon nanowire arrays by cryogenic reactive ion etching as a lithium-ion battery anode

Scientific Reports, 2021
Production of high-aspect-ratio silicon (Si) nanowire-based anode for lithium ion batteries is challenging particularly in terms of controlling wire property and geometry to improve the battery performance.
Andam Deatama Refino, Nursidik Yulianto, Iqbal Syamsu, Andika Pandu Nugroho, Naufal Hanif Hawari, Alina Syring, Evvy Kartini, Ferry Iskandar, Tobias Voss, Afriyanti Sumboja, Erwin Peiner, Hutomo Suryo Wasisto   +11 more
doaj   +1 more source

Oxidation threshold in silicon etching at cryogenic temperatures [PDF]

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2006
In silicon etching in SF6∕O2 plasmas, an oxidation threshold appears when the oxygen content is large enough. A SiOxFy passivation layer is formed under such conditions. This threshold is reached at lower oxygen proportions if the substrate is cooled down to cryogenic temperatures. In this article, we present a mass spectrometry study of this oxidation
T. Tillocher, R. Dussart, X. Mellhaoui, P. Lefaucheux, N. Mekkakia Maaza, P. Ranson, M. Boufnichel, L. J. Overzet   +7 more
openaire   +1 more source

Ga^+ beam lithography for nanoscale silicon reactive ion etching [PDF]

, 2010
By using a dry etch chemistry which relies on the highly preferential etching of silicon, over that of gallium (Ga), we show resist-free fabrication of precision, high aspect ratio nanostructures and microstructures in silicon using a focused ion beam ...
Chhim, B., Henry, M. D., Scherer, A., Shearn, M. J.   +3 more
core   +1 more source

Nanomechanical Traceable Metrology of Vertically Aligned Silicon and Germanium Nanowires by Nanoindentation

Proceedings, 2017
Silicon and germanium pillar structures (i.e., micro- and nanowires) were fabricated by a top-down approach including nanoimprint lithography and cryogenic dry etching. Various etching parameters were tested to ensure a reliable fabrication process.
Gerry Hamdana, Tony Granz, Maik Bertke, Zhi Li, Prabowo Puranto, Uwe Brand, Hutomo Suryo Wasisto, Erwin Peiner   +7 more
doaj   +1 more source

Ga+ beam lithography for suspended lateral beams and nanowires [PDF]

, 2010
The authors demonstrate the fabrication of suspended nanowires and doubly clamped beams by using a focused ion beam implanted Ga etch mask followed by an inductively coupled plasma reactive ion etching of silicon.
Henry, M. David, Scherer, Axel, Shearn, Michael   +2 more
core   +1 more source

Silicon Metalens Fabrication from Electron Beam to UV-Nanoimprint Lithography

Nanomaterials, 2021
This study presents the design and manufacture of metasurface lenses optimized for focusing light with 1.55 µm wavelength. The lenses are fabricated on silicon substrates using electron beam lithography, ultraviolet-nanoimprint lithography and cryogenic ...
Angela Mihaela Baracu, Marius Andrei Avram, Carmen Breazu, Mihaela-Cristina Bunea, Marcela Socol, Anca Stanculescu, Elena Matei, Paul Conrad Vaagen Thrane, Christopher Andrew Dirdal, Adrian Dinescu, Oana Rasoga   +10 more
doaj   +1 more source

Cryogenic silicon surface ion trap [PDF]

, 2014
Trapped ions are pre-eminent candidates for building quantum information processors and quantum simulators. They have been used to demonstrate quantum gates and algorithms, quantum error correction, and basic quantum simulations.
Blatt, Rainer, Brownnutt, Michael, Edlinger, Johannes, Kumph, Muir, Lakhmanskiy, Kirill, Niedermayr, Michael, Partel, Stefan   +6 more
core   +1 more source

Tensile strained $In_{x}Ga_{1-x}P$ membranes for cavity optomechanics [PDF]

, 2014
We investigate the optomechanical properties of tensile-strained ternary InGaP nanomembranes grown on GaAs. This material system combines the benefits of highly strained membranes based on stoichiometric silicon nitride, with the unique properties of ...
Aspelmeyer, M., Cole, G. D., Gärtner, C., Hoelscher-Obermaier, J., Nia, R. Moghadas, Purdy, T. P., Regal, C. A., Schmöle, J., Siquans, K., Wieczorek, W., Yu, P. -L.   +10 more
core   +3 more sources

UV-Nanoimprint and Deep Reactive Ion Etching of High Efficiency Silicon Metalenses: High Throughput at Low Cost with Excellent Resolution and Repeatability

Nanomaterials, 2023
As metasurfaces begin to find industrial applications there is a need to develop scalable and cost-effective fabrication techniques which offer sub-100 nm resolution while providing high throughput and large area patterning.
Christopher A. Dirdal, Karolina Milenko, Anand Summanwar, Firehun T. Dullo, Paul C. V. Thrane, Oana Rasoga, Andrei M. Avram, Adrian Dinescu, Angela M. Baracu   +8 more
doaj   +1 more source