Results 21 to 30 of about 2,906 (237)

Cryogenic etching of porous material [PDF]

Acta Physica Sinica, 2021
With the shrinkage of chip feature sizes, porous materials are widely used in microelectronics. However, they are facing severe challenges in plasma etching, as the reactive radicals can diffuse into the interior of material and damage the material, which is called plasma induced damage.
Quan-Zhi Zhang, Lei-Yu Zhang, Fang-Fang Ma, You-Nian Wang   +3 more
openaire   +1 more source

Inductively Coupled Plasma Dry Etching of Silicon Deep Trenches with Extremely Vertical Smooth Sidewalls Used in Micro-Optical Gyroscopes

Micromachines, 2023
Micro-optical gyroscopes (MOGs) place a range of components of the fiber-optic gyroscope (FOG) onto a silicon substrate, enabling miniaturization, low cost, and batch processing.
Yuyu Zhang, Yu Wu, Quanquan Sun, Lifeng Shen, Jie Lan, Lingxi Guo, Zhenfeng Shen, Xuefang Wang, Junfeng Xiao, Jianfeng Xu   +9 more
doaj   +1 more source

Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption

Scientific Reports, 2021
Cryogenic Atomic Layer Etching (cryo-ALE) of SiO2 based on alternating a C4F8 molecule physisorption step and an argon plasma step, has been enhanced thanks to a better understanding of the mechanism. First, we used Quadrupole Mass spectrometry (QMS) and
G. Antoun, T. Tillocher, P. Lefaucheux, J. Faguet, K. Maekawa, R. Dussart   +5 more
doaj   +1 more source

Perspective Method of Betavoltaic Converter Creation [PDF]

Журнал нано- та електронної фізики, 2016
Some results on planar diode structure creation by the method of a plasma-immersion ion implantation is presented in this paper. Obtained leakage current ~ 1 uA/cm2 at reverse voltage – 1 V.
K.V. Rudenko, A.V. Miakonkih, A.E. Rogojin, S.V. Bogdanov, E.T. Lelekov, V.G. Sidorov, P.V. Zelenkov   +6 more
doaj   +1 more source

ICP Etching of Silicon for Micro and Nanoscale Devices [PDF]

, 2010
The physical structuring of silicon is one of the cornerstones of modern microelectronics and integrated circuits. Typical structuring of silicon requires generating a plasma to chemically or physically etch silicon.
Henry, Michael David
core   +1 more source

Nanomechanical Traceable Metrology of Vertically Aligned Silicon and Germanium Nanowires by Nanoindentation

Proceedings, 2017
Silicon and germanium pillar structures (i.e., micro- and nanowires) were fabricated by a top-down approach including nanoimprint lithography and cryogenic dry etching. Various etching parameters were tested to ensure a reliable fabrication process.
Gerry Hamdana, Tony Granz, Maik Bertke, Zhi Li, Prabowo Puranto, Uwe Brand, Hutomo Suryo Wasisto, Erwin Peiner   +7 more
doaj   +1 more source

Cryogenic deep reactive ion etching of silicon micro and nanostructures [PDF]

, 2009
This thesis focuses on cryogenic deep reactive ion etching (DRIE) and presents how it can be applied to the fabrication of silicon micro- and nanostructures that have applications in microfluidics and micromechanics.
Sainiemi, Lauri
core   +1 more source

Silicon Metalens Fabrication from Electron Beam to UV-Nanoimprint Lithography

Nanomaterials, 2021
This study presents the design and manufacture of metasurface lenses optimized for focusing light with 1.55 µm wavelength. The lenses are fabricated on silicon substrates using electron beam lithography, ultraviolet-nanoimprint lithography and cryogenic ...
Angela Mihaela Baracu, Marius Andrei Avram, Carmen Breazu, Mihaela-Cristina Bunea, Marcela Socol, Anca Stanculescu, Elena Matei, Paul Conrad Vaagen Thrane, Christopher Andrew Dirdal, Adrian Dinescu, Oana Rasoga   +10 more
doaj   +1 more source

UV-Nanoimprint and Deep Reactive Ion Etching of High Efficiency Silicon Metalenses: High Throughput at Low Cost with Excellent Resolution and Repeatability

Nanomaterials, 2023
As metasurfaces begin to find industrial applications there is a need to develop scalable and cost-effective fabrication techniques which offer sub-100 nm resolution while providing high throughput and large area patterning.
Christopher A. Dirdal, Karolina Milenko, Anand Summanwar, Firehun T. Dullo, Paul C. V. Thrane, Oana Rasoga, Andrei M. Avram, Adrian Dinescu, Angela M. Baracu   +8 more
doaj   +1 more source

Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma

AIP Advances, 2017
An apparatus and a method for etching of the inner surfaces of superconducting radio frequency (SRF) accelerator cavities are described. The apparatus is based on the reactive ion etching performed in an Ar/Cl2 cylindrical capacitive discharge with ...
J. Upadhyay, A. Palczewski, S. Popović, A.-M. Valente-Feliciano, Do Im, H. L. Phillips, L. Vušković   +6 more
doaj   +1 more source