Results 11 to 20 of about 17,122 (236)
Techniques of cryogenic reactive ion etching in silicon for fabrication of sensors [PDF]
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2009 Cryogenic etching of silicon, using an inductively coupled plasma reactive ion etcher (ICP-RIE), has extraordinary properties which can lead to unique structures difficult to achieve using other etching methods. In this work, the authors demonstrate the application of ICP-RIE techniques which capitalize on the cryogenic properties to create different ...
M David Henry
exaly +3 more sources
High-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors [PDF]
ResearchEdge contact is essential for achieving the ultimate device pitch scaling of stacked nanosheet transistors with monolayer 2-dimensional (2D) channels. However, due to large edge-contact resistance between 2D channels and contact metal, there is currently
Jiankun Xiao +7 more
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Chemistry in Cryogenic Etching: A Tutorial
Plasma Chemistry and Plasma ProcessingAbstract Cooling the substrate to stimulate chemical reactions can seem rather counterintuitive. However, this is one of the advantages often observed in plasma cryogenic etching. This article discusses the interactions between plasma and the surface at low temperature. It begins by reviewing the fundamental theories of adsorption as applied to
Rémi Dussart +2 more
exaly +2 more sources
Mask material effects in cryogenic deep reactive ion etching [PDF]
Journal of Vacuum Science & Technology B, 2007 Cryogenic silicon etching in inductively coupled SF6∕O2 plasma has been studied, especially the behavior of mask materials. Suitability of eight different mask materials for cryogenic silicon deep reactive ion etching has been investigated. Three of the five photoresists suffered from cracking during cryogenic etching.
Franssila, Sami, Sainiemi, Lauri
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Cryogenic Etching of Silicon: An Alternative Method For Fabrication of Vertical Microcantilever Master Molds. [PDF]
J Microelectromech Syst, 2009 This paper examines the use of deep reactive ion etching (DRIE) of silicon with fluorine high-density plasmas at cryogenic temperatures to produce silicon master molds for vertical microcantilever arrays used for controlling substrate stiffness for culturing living cells. The resultant profiles achieved depend on the rate of deposition and etching of a
Addae-Mensah KA +5 more
europepmc +4 more sources
Cryogenic etching of porous material [PDF]
Acta Physica Sinica, 2021 With the shrinkage of chip feature sizes, porous materials are widely used in microelectronics. However, they are facing severe challenges in plasma etching, as the reactive radicals can diffuse into the interior of material and damage the material, which is called plasma induced damage.
Quan-Zhi Zhang +3 more
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Comparison between Bosch and STiGer Processes for Deep Silicon Etching
Micromachines, 2021 The cryogenic process is well known to etch high aspect ratio features in silicon with smooth sidewalls. A time-multiplexed cryogenic process, called STiGer, was developed in 2006 and patented.
Thomas Tillocher +5 more
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Micromachines, 2023 Micro-optical gyroscopes (MOGs) place a range of components of the fiber-optic gyroscope (FOG) onto a silicon substrate, enabling miniaturization, low cost, and batch processing.
Yuyu Zhang +9 more
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Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption
Scientific Reports, 2021 Cryogenic Atomic Layer Etching (cryo-ALE) of SiO2 based on alternating a C4F8 molecule physisorption step and an argon plasma step, has been enhanced thanks to a better understanding of the mechanism. First, we used Quadrupole Mass spectrometry (QMS) and
G. Antoun +5 more
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Mechanisms for plasma cryogenic etching of porous materials [PDF]
Applied Physics Letters, 2017 Porous materials are commonly used in microelectronics, as they can meet the demand for continuously shrinking electronic feature dimensions. However, they are facing severe challenges in plasma etching, due to plasma induced damage. In this paper, we present both the plasma characteristics and surface processing during the etching of porous materials.
Quan-Zhi Zhang +4 more
openaire +1 more source