Results 11 to 20 of about 169 (158)

Perspective Method of Betavoltaic Converter Creation [PDF]

Журнал нано- та електронної фізики, 2016
Some results on planar diode structure creation by the method of a plasma-immersion ion implantation is presented in this paper. Obtained leakage current ~ 1 uA/cm2 at reverse voltage – 1 V.
K.V. Rudenko, A.V. Miakonkih, A.E. Rogojin, S.V. Bogdanov, E.T. Lelekov, V.G. Sidorov, P.V. Zelenkov   +6 more
doaj   +1 more source

Mechanisms for plasma cryogenic etching of porous materials [PDF]

Applied Physics Letters, 2017
Porous materials are commonly used in microelectronics, as they can meet the demand for continuously shrinking electronic feature dimensions. However, they are facing severe challenges in plasma etching, due to plasma induced damage. In this paper, we present both the plasma characteristics and surface processing during the etching of porous materials.
Quan-Zhi Zhang, Stefan Tinck, Jean-François de Marneffe, Liping Zhang, Annemie Bogaerts   +4 more
openaire   +2 more sources

Versatilely tuned vertical silicon nanowire arrays by cryogenic reactive ion etching as a lithium-ion battery anode

Scientific Reports, 2021
Production of high-aspect-ratio silicon (Si) nanowire-based anode for lithium ion batteries is challenging particularly in terms of controlling wire property and geometry to improve the battery performance.
Andam Deatama Refino, Nursidik Yulianto, Iqbal Syamsu, Andika Pandu Nugroho, Naufal Hanif Hawari, Alina Syring, Evvy Kartini, Ferry Iskandar, Tobias Voss, Afriyanti Sumboja, Erwin Peiner, Hutomo Suryo Wasisto   +11 more
doaj   +1 more source

Oxidation threshold in silicon etching at cryogenic temperatures [PDF]

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2006
In silicon etching in SF6∕O2 plasmas, an oxidation threshold appears when the oxygen content is large enough. A SiOxFy passivation layer is formed under such conditions. This threshold is reached at lower oxygen proportions if the substrate is cooled down to cryogenic temperatures. In this article, we present a mass spectrometry study of this oxidation
T. Tillocher, R. Dussart, X. Mellhaoui, P. Lefaucheux, N. Mekkakia Maaza, P. Ranson, M. Boufnichel, L. J. Overzet   +7 more
openaire   +1 more source

Nanomechanical Traceable Metrology of Vertically Aligned Silicon and Germanium Nanowires by Nanoindentation

Proceedings, 2017
Silicon and germanium pillar structures (i.e., micro- and nanowires) were fabricated by a top-down approach including nanoimprint lithography and cryogenic dry etching. Various etching parameters were tested to ensure a reliable fabrication process.
Gerry Hamdana, Tony Granz, Maik Bertke, Zhi Li, Prabowo Puranto, Uwe Brand, Hutomo Suryo Wasisto, Erwin Peiner   +7 more
doaj   +1 more source

Silicon Metalens Fabrication from Electron Beam to UV-Nanoimprint Lithography

Nanomaterials, 2021
This study presents the design and manufacture of metasurface lenses optimized for focusing light with 1.55 µm wavelength. The lenses are fabricated on silicon substrates using electron beam lithography, ultraviolet-nanoimprint lithography and cryogenic ...
Angela Mihaela Baracu, Marius Andrei Avram, Carmen Breazu, Mihaela-Cristina Bunea, Marcela Socol, Anca Stanculescu, Elena Matei, Paul Conrad Vaagen Thrane, Christopher Andrew Dirdal, Adrian Dinescu, Oana Rasoga   +10 more
doaj   +1 more source

UV-Nanoimprint and Deep Reactive Ion Etching of High Efficiency Silicon Metalenses: High Throughput at Low Cost with Excellent Resolution and Repeatability

Nanomaterials, 2023
As metasurfaces begin to find industrial applications there is a need to develop scalable and cost-effective fabrication techniques which offer sub-100 nm resolution while providing high throughput and large area patterning.
Christopher A. Dirdal, Karolina Milenko, Anand Summanwar, Firehun T. Dullo, Paul C. V. Thrane, Oana Rasoga, Andrei M. Avram, Adrian Dinescu, Angela M. Baracu   +8 more
doaj   +1 more source

Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma

AIP Advances, 2017
An apparatus and a method for etching of the inner surfaces of superconducting radio frequency (SRF) accelerator cavities are described. The apparatus is based on the reactive ion etching performed in an Ar/Cl2 cylindrical capacitive discharge with ...
J. Upadhyay, A. Palczewski, S. Popović, A.-M. Valente-Feliciano, Do Im, H. L. Phillips, L. Vušković   +6 more
doaj   +1 more source

Fabrication of ZnO Nanorods on MEMS Piezoresistive Silicon Microcantilevers for Environmental Monitoring

Proceedings, 2017
In this study, a ZnO nanorods (NRs) patterned MEMS piezoresistive silicon micro-cantilever was fabricated as environmental monitor. The fabrication starts from bulk silicon, utilizing photolithography, diffusion, inductively coupled plasma (ICP ...
Jiushuai Xu, Maik Bertke, Alaaeldin Gad, Feng Yu, Gerry Hamdana, Andrey Bakin, Erwin Peiner   +6 more
doaj   +1 more source

Computational fluid dynamics modeling of a wafer etch temperature control system

Digital Chemical Engineering, 2023
Next-generation etching processes for semiconductor manufacturing exploit the potential of a variety of operating conditions, including cryogenic conditions at which high etch rates of silicon and very low etch rates of the photoresist are achieved. Thus,
Henrique Oyama, Kip Nieman, Anh Tran, Bernard Keville, Yewei Wu, Helen Durand   +5 more
doaj   +1 more source