Results 11 to 20 of about 2,906 (237)

Techniques of cryogenic reactive ion etching in silicon for fabrication of sensors [PDF]

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2009
Cryogenic etching of silicon, using an inductively coupled plasma reactive ion etcher (ICP-RIE), has extraordinary properties which can lead to unique structures difficult to achieve using other etching methods. In this work, the authors demonstrate the application of ICP-RIE techniques which capitalize on the cryogenic properties to create different ...
M David Henry, Scherer Axel
exaly   +4 more sources

Mechanisms for plasma cryogenic etching of porous materials [PDF]

Applied Physics Letters, 2017
Porous materials are commonly used in microelectronics, as they can meet the demand for continuously shrinking electronic feature dimensions. However, they are facing severe challenges in plasma etching, due to plasma induced damage. In this paper, we present both the plasma characteristics and surface processing during the etching of porous materials.
Quan-Zhi Zhang, Stefan Tinck, Jean-François de Marneffe, Liping Zhang, Annemie Bogaerts   +4 more
openaire   +3 more sources

Comparison between Bosch and STiGer Processes for Deep Silicon Etching

Micromachines, 2021
The cryogenic process is well known to etch high aspect ratio features in silicon with smooth sidewalls. A time-multiplexed cryogenic process, called STiGer, was developed in 2006 and patented.
Thomas Tillocher, Jack Nos, Gaëlle Antoun, Philippe Lefaucheux, Mohamed Boufnichel, Rémi Dussart   +5 more
doaj   +2 more sources

Oxidation threshold in silicon etching at cryogenic temperatures [PDF]

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2006
In silicon etching in SF6∕O2 plasmas, an oxidation threshold appears when the oxygen content is large enough. A SiOxFy passivation layer is formed under such conditions. This threshold is reached at lower oxygen proportions if the substrate is cooled down to cryogenic temperatures. In this article, we present a mass spectrometry study of this oxidation
T. Tillocher, R. Dussart, X. Mellhaoui, P. Lefaucheux, N. Mekkakia Maaza, P. Ranson, M. Boufnichel, L. J. Overzet   +7 more
openaire   +2 more sources

Versatilely tuned vertical silicon nanowire arrays by cryogenic reactive ion etching as a lithium-ion battery anode [PDF]

Scientific Reports, 2021
Production of high-aspect-ratio silicon (Si) nanowire-based anode for lithium ion batteries is challenging particularly in terms of controlling wire property and geometry to improve the battery performance.
Andam Deatama Refino, Nursidik Yulianto, Iqbal Syamsu, Andika Pandu Nugroho, Naufal Hanif Hawari, Alina Syring, Evvy Kartini, Ferry Iskandar, Tobias Voss, Afriyanti Sumboja, Erwin Peiner, Hutomo Suryo Wasisto   +11 more
doaj   +2 more sources

Fluorine–Silicon Surface Reactions during Cryogenic and Near Room Temperature Etching [PDF]

The Journal of Physical Chemistry C, 2014
Cyrogenic etching of silicon is envisaged to enable better control over plasma processing in the microelectronics industry, albeit little is known about the fundamental differences compared to the ...
Tinck, Stefan, Neyts, Erik C., Bogaerts, Annemie   +2 more
openaire   +3 more sources

Quantum circuits with SINIS structures [PDF]

Beilstein Journal of Nanotechnology
The superconductor–insulator–normal metal–insulator–superconductor (SINIS) tunnel junction structure is the basic building block for various cryogenic devices. Microwave detectors, electron coolers, primary thermometers, and Aharonov–Bohm interferometers
Mikhail Tarasov, Mikhail Fominskii, Aleksandra Gunbina, Artem Krasilnikov, Maria Mansfeld, Dmitrii Kukushkin, Andrei Maruhno, Valeria Ievleva, Mikhail Strelkov, Daniil Zhogov, Konstantin Arutyunov, Vyacheslav Vdovin, Vladislav Stolyarov, Valerian Edelman   +13 more
doaj   +2 more sources

Chemistry in Cryogenic Etching: A Tutorial

Plasma Chemistry and Plasma Processing
Abstract Cooling the substrate to stimulate chemical reactions can seem rather counterintuitive. However, this is one of the advantages often observed in plasma cryogenic etching. This article discusses the interactions between plasma and the surface at low temperature. It begins by reviewing the fundamental theories of adsorption as applied to
R Dussart, T Tillocher
exaly   +2 more sources

Mask material effects in cryogenic deep reactive ion etching [PDF]

Journal of Vacuum Science & Technology B, 2007
Cryogenic silicon etching in inductively coupled SF6∕O2 plasma has been studied, especially the behavior of mask materials. Suitability of eight different mask materials for cryogenic silicon deep reactive ion etching has been investigated. Three of the five photoresists suffered from cracking during cryogenic etching.
S Franssila
exaly   +3 more sources

High-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors [PDF]

Research
Edge contact is essential for achieving the ultimate device pitch scaling of stacked nanosheet transistors with monolayer 2-dimensional (2D) channels. However, due to large edge-contact resistance between 2D channels and contact metal, there is currently
Jiankun Xiao, Xiong Xiong, Xinhang Shi, Shiyuan Liu, Shenwu Zhu, Yue Zhang, Ru Huang, Yanqing Wu   +7 more
doaj   +2 more sources