Results 11 to 20 of about 34,979 (291)
Micro and Nano Systems Letters, 2020 Deep reactive-ion etching (DRIE) is commonly used for high aspect ratio silicon micromachining. However, scalloping, which is the result of the alternating Bosch process of DRIE, can cause many problems in the subsequent process and degrade device ...
Jin Soo Park +7 more
doaj +1 more source
Plasma removal of Parylene C [PDF]
, 2008 Parylene C, an emerging material in microelectromechanical systems, is of particular interest in biomedical and lab-on-a-chip applications where stable, chemically inert surfaces are desired.
Li, Po-Ying, Meng, Ellis, Tai, Yu-Chong
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Deep reactive ion etching of silicon carbide [PDF]
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2001 In this article, we describe more than 100-μm-deep reactive ion etching (RIE) of silicon carbide (SiC) in oxygen-added sulfur hexafluoride (SF6) plasma. We used a homemade magnetically enhanced, inductively coupled plasma reactive ion etcher (ME-ICP-RIE) and electroplated nickel masks. First, 5 h etching experiments using etching gases with 0%, 5%, 10%
Tanaka, S, Rajanna, K, Abe, T, Esashi, M
openaire +2 more sources
The Improvement of Performance through Minimizing Scallop Size in MEMS Based Micro Wind Turbine
Micromachines, 2021 In this paper we report on the improvement of performance by minimizing scallop size through deep reactive-ion etching (DRIE) of rotors in micro-wind turbines based on micro-electro-mechanical systems (MEMS) technology.
Young Chan Choi +3 more
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Thermally assisted ion beam etching of polytetrafluoroethylene, a new technique for high aspect ratio etching of MEMS [PDF]
, 1996 In micromechanics, the etching of high aspect ratio structures in polymers is a prime technology. Normally, oxygen-based reactive ion etching or the LIGA technique are used to achieve this goal.
Berenschot, Erwin +4 more
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The black silicon method II: the effect of mask material and loading on the reactive ion etching of deep silicon trenches [PDF]
, 1994 Very deep trenches in Si with smooth controllable profiles are etched using a fluorine-based Reactive Ion Etcher(RIE). The effect of various mask materials and loading on the profile is examined using the Black Silicon Method. It is found that most metal
Boer, Meint de +4 more
core +9 more sources
Design of experiment for the optimisation of deep reactive ion etching of silicon inserts for micro-fabrication [PDF]
, 2012 The following paper describes a design of experiments investigation of the deep reactive of pillar structures on a silicon wafer. The etched wafers would subsequently be used as masters for the fabrication of nickel mould inserts for microinjection ...
Alcock, Jeffrey R. +2 more
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APL Materials, 2022 Incorporating ultrahigh concentrations of deep-level dopants in silicon drastically alters silicon’s optoelectronic properties. Photodiodes built from silicon hyperdoped with gold extend light sensitivity into the shortwave infrared region, far beyond ...
Sashini Senali Dissanayake +10 more
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Nanomaterials, 2022 Micromachined devices were developed and fabricated using complementary metal-oxide-semiconductor (CMOS)/micro-electro-mechanical systems (MEMS) technology allowing for the analysis of transport properties of silicon sub-micron beams having monolithic ...
Andrej Stranz +2 more
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Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures [PDF]
, 2002 This paper presents guidelines for the deep reactive ion etching (DRIE) of silicon MEMS structures, employing SF/sub 6//O/sub 2/-based high-density plasmas at cryogenic temperatures.
Boer, Meint J. de +6 more
core +2 more sources