Two-step Fabrication of Large Area SiO2/Si Membranes
Medžiagotyra, 2012 Two-step fabrication technique of SiO2/Si membrane combining the deep local etching of double side polished and thermally oxidized silicon <100> wafer in tetramethylammonium hydroxide (TMAH) water solution and SF6/O2 reactive ion etching is ...
Viktoras GRIGALIŪNAS +7 more
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Fabrication of photonic band-gap crystals [PDF]
, 1995 We describe the fabrication of three-dimensional photonic crystals using a reproducible and reliable procedure consisting of electron beam lithography followed by a sequence of dry etching steps.
Cheng, C. C., Scherer, A.
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The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control [PDF]
, 1994 Very deep trenches (up to 200 µm) with high aspect ratios (up to 10) in silicon and polymers are etched using a fluorine-based plasma (SF6/O2/CHF3). Isotropic, positively and negatively (i.e.
de Boer, Meint J. +4 more
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Micromachines, 2018 A three-dimensional topography simulation of deep reactive ion etching (DRIE) is developed based on the narrow band level set method for surface evolution and Monte Carlo method for flux distribution.
Jia-Cheng Yu +6 more
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Exploring Vacuum Casting Techniques for Micron and Submicron Features [PDF]
, 2004 A study of resolution limits in standard rapid prototyping vacuum cast molding processes and adaptation of this technique to reach submicron accuracy is proposed.
Denoual, M., Lepioufle, B., Mognol, P.
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Optimization of deep reactive ion etching for microscale silicon hole arrays with high aspect ratio
Micro and Nano Systems Letters, 2022 During deep reactive ion etching (DRIE), microscale etch masks with small opening such as trenches or holes suffer from limited aspect ratio because diffusion of reactive ions and free radicals become progressively difficult as the number of DRIE cycle ...
Taeyeong Kim, Jungchul Lee
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In vivo measurements with robust silicon-based multielectrode arrays with extreme shaft lengths [PDF]
, 2013 In this paper, manufacturing and in vivo testing of extreme-long Si-based neural microelectrode arrays are presented. Probes with different shaft lengths (15–70 mm) are formed by deep reactive ion etching and have been equipped with platinum electrodes ...
Baracskay, Péter +7 more
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Etching technique of high aspect ratio silicon trenches based on CMOS-MEMS process
Dianzi Jishu Yingyong, 2018 Etching technique of deep silicon trenches with high aspect ratio is critical in improving integration and accuracy of Micro-Electro-Mechanical Systems(MEMS)sensor array and reducing the cost of it.
Zhang Haihua, Lv Yufei, Lu Zhongxuan
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Ga^+ beam lithography for nanoscale silicon reactive ion etching [PDF]
, 2010 By using a dry etch chemistry which relies on the highly preferential etching of silicon, over that of gallium (Ga), we show resist-free fabrication of precision, high aspect ratio nanostructures and microstructures in silicon using a focused ion beam ...
Chhim, B. +3 more
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Single-Step CMOS Compatible Fabrication of High Aspect Ratio Microchannels Embedded in Silicon
Proceedings, 2017 This paper presents a new method for the CMOS compatible fabrication of microchannels integrated into a silicon substrate. In a single-step DRIE process (Deep Reactive Ion Etching) a network of microchannels with High Aspect Ratio (HAR) up to 10, can be ...
Marta Kluba +4 more
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