Results 1 to 10 of about 53,870 (328)

Reduced Etch Lag and High Aspect Ratios by Deep Reactive Ion Etching (DRIE) [PDF]

open access: yesMicromachines, 2021
Deep reactive ion etching (DRIE) with the Bosch process is one of the key procedures used to manufacture micron-sized structures for MEMS and microfluidic applications in silicon and, hence, of increasing importance for miniaturisation in biomedical ...
Michael S. Gerlt   +4 more
doaj   +9 more sources

Metasurface Fabrication by Cryogenic and Bosch Deep Reactive Ion Etching [PDF]

open access: yesMicromachines, 2021
The research field of metasurfaces has attracted considerable attention in recent years due to its high potential to achieve flat, ultrathin optical devices of high performance. Metasurfaces, consisting of artificial patterns of subwavelength dimensions,
Angela M. Baracu   +7 more
doaj   +7 more sources

Towards the Fabrication of High-Aspect-Ratio Silicon Gratings by Deep Reactive Ion Etching [PDF]

open access: yesMicromachines, 2020
The key optical components of X-ray grating interferometry are gratings, whose profile requirements play the most critical role in acquiring high quality images.
Zhitian Shi   +3 more
doaj   +3 more sources

Deep Reactive Ion Etching of Z-Cut Alpha Quartz for MEMS Resonant Devices Fabrication [PDF]

open access: yesMicromachines, 2020
Quartz is widely used in microelectromechanical systems (MEMS). Especially, MEMS quartz resonators are applied to sensors and serve as sensitive elements. The capability of deep etching is a limitation for the application.
Bo Li   +4 more
doaj   +3 more sources

Fabrication of sharp silicon hollow microneedles by deep-reactive ion etching towards minimally invasive diagnostics. [PDF]

open access: yesMicrosyst Nanoeng, 2019
Microneedle technologies have the potential for expanding the capabilities of wearable health monitoring from physiology to biochemistry. This paper presents the fabrication of silicon hollow microneedles by a deep-reactive ion etching (DRIE) process ...
Li Y   +8 more
europepmc   +2 more sources

Optimization of deep reactive ion etching for microscale silicon hole arrays with high aspect ratio

open access: yesMicro and Nano Systems Letters, 2022
During deep reactive ion etching (DRIE), microscale etch masks with small opening such as trenches or holes suffer from limited aspect ratio because diffusion of reactive ions and free radicals become progressively difficult as the number of DRIE cycle ...
Taeyeong Kim, Jungchul Lee
doaj   +2 more sources

Precision micro-mechanical components in single crystal diamond by deep reactive ion etching. [PDF]

open access: yesMicrosyst Nanoeng, 2018
The outstanding material properties of single crystal diamond have been at the origin of the long-standing interest in its exploitation for engineering of high-performance micro- and nanosystems.
Toros A   +5 more
europepmc   +2 more sources

Deep reactive ion etching of cylindrical nanopores in silicon for photonic crystals

open access: yesNanotechnology, 2022
Abstract Periodic arrays of deep nanopores etched in silicon by deep reactive ion etching are desirable structures for photonic crystals and other nanostructures for silicon nanophotonics. Previous studies focused on realizing as deep as possible nanopores with as high as possible aspect ratios.
Melissa J Goodwin   +3 more
openaire   +4 more sources

AI-driven feature recognition of SEM profiles in deep reactive ion etching based on physics-constrained variational autoencoder [PDF]

open access: yesMicrosystems & Nanoengineering
Deep reactive ion etching (DRIE) is critical for fabricating high-aspect-ratio structures in microelectromechanical systems (MEMS), yet its complex, parameter-dependent process poses significant optimization challenges.
Fang Wang   +6 more
doaj   +2 more sources

Molecular dynamics simulation of atomic layer etching for sidewall damage recovery in GaN-based structures [PDF]

open access: yesScientific Reports
Today, as GaN-based devices are becoming increasingly smaller, dry etching has been employed, but it has caused damage, particularly in InGaN/GaN multiple quantum well (MQW) structures exposed to Cl2-based reactive ion etching (RIE).
Eun Koo Kim   +13 more
doaj   +2 more sources

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