Results 21 to 30 of about 6,900 (149)
Micromachines, 2018 A three-dimensional topography simulation of deep reactive ion etching (DRIE) is developed based on the narrow band level set method for surface evolution and Monte Carlo method for flux distribution.
Jia-Cheng Yu +6 more
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Etching technique of high aspect ratio silicon trenches based on CMOS-MEMS process
Dianzi Jishu Yingyong, 2018 Etching technique of deep silicon trenches with high aspect ratio is critical in improving integration and accuracy of Micro-Electro-Mechanical Systems(MEMS)sensor array and reducing the cost of it.
Zhang Haihua, Lv Yufei, Lu Zhongxuan
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Optimization of deep reactive ion etching for microscale silicon hole arrays with high aspect ratio
Micro and Nano Systems Letters, 2022 During deep reactive ion etching (DRIE), microscale etch masks with small opening such as trenches or holes suffer from limited aspect ratio because diffusion of reactive ions and free radicals become progressively difficult as the number of DRIE cycle ...
Taeyeong Kim, Jungchul Lee
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Single-Step CMOS Compatible Fabrication of High Aspect Ratio Microchannels Embedded in Silicon
Proceedings, 2017 This paper presents a new method for the CMOS compatible fabrication of microchannels integrated into a silicon substrate. In a single-step DRIE process (Deep Reactive Ion Etching) a network of microchannels with High Aspect Ratio (HAR) up to 10, can be ...
Marta Kluba +4 more
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Thermal scanning probe lithography using Parylene C as thermal resist
Micro & Nano Letters, 2022 Thermal scanning probe lithography is a direct‐write patterning method that uses a heated scanning probe tip to remove thermal resist. The most widely used thermal resist is polyphthalaldehyde. Another alternative thermal resist, Parylene C is introduced
Yun Jiang +4 more
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Scientific Reports, 2023 Dielectric losses are one of the key factors limiting the coherence of superconducting qubits. The impact of materials and fabrication steps on dielectric losses can be evaluated using coplanar waveguide (CPW) microwave resonators.
E. V. Zikiy +9 more
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The Influence of Etching Method on the Occurrence of Defect Levels in III-V and II-VI Materials
NanomaterialsThe influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching and ...
Kinga Majkowycz +5 more
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Single crystal diamond micro-disk resonators by focused ion beam milling
APL Photonics, 2018 We report on single crystal diamond micro-disk resonators fabricated in bulk chemical vapor deposition diamond plates (3 mm × 3 mm × 0.15 mm) using a combination of deep reactive ion etching and Focused Ion Beam (FIB) milling.
Teodoro Graziosi +3 more
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A two-level prediction model for deep reactive ion etch (DRIE) [PDF]
18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005., 2005 The authors contribute a quantitative and systematic model to capture etch non-uniformity in deep reactive ion etch of MEMS devices. Non-uniformity depends on uneven distributions of ion and neutral species at the wafer level, and local consumption at the die level.
Taylor, Hayden K. +4 more
openaire +2 more sources
AIP Advances, 2016 In view of the integration of membrane resonators with more complex MEMS structures, we developed a general fabrication procedure for circular shape SiNx membranes using Deep Reactive Ion Etching (DRIE).
E. Serra +18 more
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