Results 21 to 30 of about 19,615 (204)
Micromachines, 2018 A three-dimensional topography simulation of deep reactive ion etching (DRIE) is developed based on the narrow band level set method for surface evolution and Monte Carlo method for flux distribution.
Jia-Cheng Yu +6 more
doaj +1 more source
Etching technique of high aspect ratio silicon trenches based on CMOS-MEMS process
Dianzi Jishu Yingyong, 2018 Etching technique of deep silicon trenches with high aspect ratio is critical in improving integration and accuracy of Micro-Electro-Mechanical Systems(MEMS)sensor array and reducing the cost of it.
Zhang Haihua, Lv Yufei, Lu Zhongxuan
doaj +1 more source
Scientific Reports, 2023 Dielectric losses are one of the key factors limiting the coherence of superconducting qubits. The impact of materials and fabrication steps on dielectric losses can be evaluated using coplanar waveguide (CPW) microwave resonators.
E. V. Zikiy +9 more
doaj +1 more source
Single-Step CMOS Compatible Fabrication of High Aspect Ratio Microchannels Embedded in Silicon
Proceedings, 2017 This paper presents a new method for the CMOS compatible fabrication of microchannels integrated into a silicon substrate. In a single-step DRIE process (Deep Reactive Ion Etching) a network of microchannels with High Aspect Ratio (HAR) up to 10, can be ...
Marta Kluba +4 more
doaj +1 more source
Thermal scanning probe lithography using Parylene C as thermal resist
Micro & Nano Letters, 2022 Thermal scanning probe lithography is a direct‐write patterning method that uses a heated scanning probe tip to remove thermal resist. The most widely used thermal resist is polyphthalaldehyde. Another alternative thermal resist, Parylene C is introduced
Yun Jiang +4 more
doaj +1 more source
Deep-reactive ion etching of silicon nanowire arrays at cryogenic temperatures
Applied Physics ReviewsThe pursuit of sculpting materials at increasingly smaller and deeper scales remains a persistent subject in the field of micro- and nanofabrication. Anisotropic deep-reactive ion etching of silicon at cryogenic temperatures (cryo-DRIE) was investigated ...
Jiu-Shuai Xu +15 more
semanticscholar +1 more source
The Influence of Etching Method on the Occurrence of Defect Levels in III-V and II-VI Materials
NanomaterialsThe influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching and ...
Kinga Majkowycz +5 more
doaj +1 more source
Precision micro-mechanical components in single crystal diamond by deep reactive ion etching
Microsystems & Nanoengineering, 2018 The outstanding material properties of single crystal diamond have been at the origin of the long-standing interest in its exploitation for engineering of high-performance micro- and nanosystems.
A. Toros +5 more
semanticscholar +1 more source
Hybrid lithography based fabrication of 3D patterns by deep reactive ion etching
Microelectronic Engineering, 2019 Electron-beam lithography (EBL) possesses tremendous capabilities in terms of patterning ultra-small features, with very low line edge roughness and high overlay accuracy.
L. Jenni, L. Kumar, C. Hierold
semanticscholar +1 more source
Single crystal diamond micro-disk resonators by focused ion beam milling
APL Photonics, 2018 We report on single crystal diamond micro-disk resonators fabricated in bulk chemical vapor deposition diamond plates (3 mm × 3 mm × 0.15 mm) using a combination of deep reactive ion etching and Focused Ion Beam (FIB) milling.
Teodoro Graziosi +3 more
doaj +1 more source