Results 41 to 50 of about 6,900 (149)

Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application

open access: yesNanoscale Research Letters, 2018
Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit.
Hao Zhong   +4 more
doaj   +1 more source

Three step deep reactive ion etch for high density trench etching

open access: yesJournal of Physics: Conference Series, 2016
A three step Deep Reactive Ion Etch (DRIE) process is developed to etch trenches of 10μm wide to a depth of 130μm into silicon with an etch rate of 2.5μm min-1. The aim of this process is to obtain sidewalls with an angle close to 90°. The process allows the etching of multiple trenches with high aspect ratios that are closely placed together.
Lips, Bram, Puers, Bob
openaire   +1 more source

Design and Fabrication of Capacitive Silicon Nanomechanical Resonators with Selective Vibration of a High-Order Mode

open access: yesMicromachines, 2017
This paper reports the design and fabrication of capacitive silicon nanomechanical resonators with the selective vibration of a high-order mode. Fixed-fixed beam capacitive silicon resonators have been successfully produced by the use of electron beam ...
Nguyen Van Toan   +4 more
doaj   +1 more source

Optimization of Etching Profile in Deep-Reactive-Ion Etching for MEMS Processes of Sensors

open access: yesJournal of Sensor Science and Technology, 2015
This paper reports the results of a study on the optimization of the etching profile, which is an important factor in deep-reactive-ion etching (DRIE), i.e., dry etching. Dry etching is the key processing step necessary for the development of the Internet of Things (IoT) and various microelectromechanical sensors (MEMS). Large-area etching (open area >
Chung Mo Yang   +2 more
openaire   +2 more sources

Fabrication and electrochemical characterization of ruthenium nanoelectrodes

open access: yesCurrent Directions in Biomedical Engineering, 2017
The Fraunhofer IMS has recently developed a technique for producing nanoelectrodes that are generated by atomic layer deposition (ALD) in a via deep reactive ion etching (DRIE) structured sacrificial layer.
Allani Sonja   +4 more
doaj   +1 more source

17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching

open access: yesInternational Journal of Photoenergy, 2012
For lower reflectance, we applied a maskless plasma texturing technique using reactive ion etching (RIE) on acidic-textured multicrystalline silicon (mc-Si) wafer. RIE texturing had a deep and narrow textured surface and showed excellent low reflectance.
Ji-Myung Shim   +12 more
doaj   +1 more source

UV-Nanoimprint and Deep Reactive Ion Etching of High Efficiency Silicon Metalenses: High Throughput at Low Cost with Excellent Resolution and Repeatability. [PDF]

open access: yesNanomaterials (Basel), 2023
Dirdal CA   +8 more
europepmc   +1 more source

Microfabrication Technologies for Interaction Circuits of THz Vacuum Electronic Devices

open access: yesMicromachines
Advances in manufacturing technology are allowing for the realization of interaction circuit with microstructures. The capability to produce small circuit structures is allowing new opportunities for vacuum electronic devices producing terahertz (THz ...
Xinghui Li, Jinjun Feng
doaj   +1 more source

New DRIE-Patterned Electrets for Vibration Energy Harvesting

open access: yesEPJ Web of Conferences, 2012
This paper is about a new manufacturing process aimed at developing stable SiO2/Si3N4 patterned electrets using a Deep Reactive Ion Etching (DRIE) step for an application in electret-based Vibration Energy Harvesters (e-VEH).
Chaillout J.-J.   +3 more
doaj   +1 more source

Modelling and Fabrication of Micro-SOFC Membrane Structure

open access: yesMedžiagotyra, 2014
Fabrication process of micro-SOFC membrane structure using the bulk micromachining of silicon technique with SiO2 and Si3N4 sacrificial layers is presented in this study.
Brigita ABAKEVIČIENĖ   +6 more
doaj   +1 more source

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