Results 61 to 70 of about 19,615 (204)
This study reports a self‐powered InGaAs nanowire photodetector achieving single‐photon‐level sensitivity in the shortwave infrared at non‐cryogenic temperatures. The device demonstrates high‐speed imaging capabilities even under extremely low‐flux conditions.
Kosala Dhanawansha +10 more
wiley +1 more source
Preparation of RVG‐modified erythrocyte membrane‐coated HMPB nanocarriers loaded with L‐arginine and NBP (RM@HPAN) and its neuroprotective mechanism. After intravenous injection, RM@HPAN achieves prolonged circulation, RVG‐29‐mediated BBB penetration, and ischemic accumulation.
Shaofa Li +9 more
wiley +1 more source
Fabrication and electrochemical characterization of ruthenium nanoelectrodes
The Fraunhofer IMS has recently developed a technique for producing nanoelectrodes that are generated by atomic layer deposition (ALD) in a via deep reactive ion etching (DRIE) structured sacrificial layer.
Allani Sonja +4 more
doaj +1 more source
Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit.
Hao Zhong +4 more
doaj +1 more source
Recent advances in microfluidic technologies for microgel fabrication are critically reviewed, highlighting the capabilities and limitations of major microfluidic platforms and discussing how platform design, material selection, and crosslinking strategies influence microgel architecture and functionality. Current challenges and future opportunities in
Afshin Abrishamkar +6 more
wiley +1 more source
Today, as GaN-based devices are becoming increasingly smaller, dry etching has been employed, but it has caused damage, particularly in InGaN/GaN multiple quantum well (MQW) structures exposed to Cl2-based reactive ion etching (RIE).
Eun Koo Kim +13 more
doaj +1 more source
Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi +11 more
wiley +1 more source
For lower reflectance, we applied a maskless plasma texturing technique using reactive ion etching (RIE) on acidic-textured multicrystalline silicon (mc-Si) wafer. RIE texturing had a deep and narrow textured surface and showed excellent low reflectance.
Ji-Myung Shim +12 more
doaj +1 more source
Three step deep reactive ion etch for high density trench etching
A three step Deep Reactive Ion Etch (DRIE) process is developed to etch trenches of 10μm wide to a depth of 130μm into silicon with an etch rate of 2.5μm min-1. The aim of this process is to obtain sidewalls with an angle close to 90°. The process allows
Bram Lips, R. Puers
semanticscholar +1 more source
This review highlights the role of self‐assembled monolayers (SAMs) in perovskite solar cells, covering molecular engineering, multifunctional interface regulation, machine learning (ML) accelerated discovery, advanced device architectures, and pathways toward scalable fabrication and commercialization for high‐efficiency and stable single‐junction and
Asmat Ullah, Ying Luo, Stefaan De Wolf
wiley +1 more source

