Results 81 to 90 of about 19,615 (204)

Simulations of Novel Semi-Spherical Electrode Detectors Formed by Simultaneously Deep-Etched Trenches

Micromachines
A novel 3D detector with a semi-spherical electrode detector structure is proposed in this study. The semi-spherical electrode is formed by concentric deep circular-type trenches of varying depths.
Hongfei Wang, Zheng Li
doaj   +1 more source

MEMS Inertial Switch for Military Applications

Proceedings, 2017
We developed a MEMS inertial switch (hereafter, the switch) for an ignition system of missiles. The developed switch consists of four folded beams and a plate suspended by the beams, analogous to a well-known spring-mass system.
Hyo-Nam Lee, Seung-Gyo Jang, Sungryeol Lee, Jeong-Sun Lee, Young-Suk Hwang   +4 more
doaj   +1 more source

Sub‐Nanometer Cobalt on Tungsten Titanium Carbide MXene (W2TiC2Tx): An Electrocatalyst for Highly Efficient and Stable Alkaline Hydrogen Evolution at Industrial‐Scale Current Density

Advanced Materials, EarlyView.
A novel W2TiC2Tx MXene prepared through a MAX‐phase route supports sub‐nanometer Co for highly efficient alkaline hydrogen evolution. Strong Co–W interfacial interactions optimize hydrogen adsorption and catalytic activity, enabling low overpotentials of 63 mV at 10 mA cm−2, small Tafel slope of 44.3 mV dec−1, and exceptional durability at industrially
Xiaopeng Liu, Fan Yang, Deep M. Patel, Mohammad Albloushi, Qiqi Mao, Shan Jiang, Christian J. Breckner, Connor W. Schroeder, Ruoyu Cui, Tao Ma, Dapeng Jing, Wenyu Huang, Jeffrey T. Miller, Wenzhen Li, Luke T. Roling, Yue Wu   +15 more
wiley   +1 more source

Defect‐Templated Phase Engineering in Atomically Thin Metals

Advanced Materials, EarlyView.
Graphene defects are transformed from passive imperfections into programmable templates for phase‐selective growth of atomically thin silver. Plasma‐generated boundary defects favor Ag(1), whereas sp3‐rich zero‐layer graphene promotes Ag(2). This defect‐directed intercalation links local graphene chemistry to crystalline phase, electronic structure ...
Arpit Jain, Boyang Zheng, Sawani Datta, Kanchan Ulman, Jakob Henz, Matthew Wei‐Jun Liu, Van Dong Pham, Wen He, Chengye Dong, Li‐Syuan Lu, Alexander Vera, Nader Sawtarie, Wesley Auker, Ke Wang, Bob Hengstebeck, Zachary W. Henshaw, Shreya Mathela, Maxwell Wetherington, William H. Blades, Kenneth Knappenberger, Ursula Wurstbauer, Su Ying Quek, Ulrich Starke, Shengxi Huang, Vincent H. Crespi, Joshua A. Robinson   +25 more
wiley   +1 more source

Deterministic Field‐Free Switching of Perpendicular Magnetization by Bulk Mirror Symmetry Broken Bi1−xSbx (012) with High Spin Hall Conductivity

Advanced Materials, EarlyView.
Crystal orientation and domain engineering enable bulk mirror symmetry breaking in Bi1−xSbx, resulting in ultralow current‐induced switching of perpendicular magnetization without an external field. By exploiting single‐domain Bi1−xSbx (012), the authors demonstrate an out‐of‐plane spin Hall conductivity of ∼1.12×105ℏ2eΩ−1m−1$ \sim \!1.12 \ensuremath ...
Seungwon Rho, Youngmin Lee, Jaeseok Huh, Jaehan Park, Hyeong‐Jun Son, Dowoo Pyeon, Mann‐Ho Cho   +6 more
wiley   +1 more source

AI-driven feature recognition of SEM profiles in deep reactive ion etching based on physics-constrained variational autoencoder

Microsystems & Nanoengineering
Deep reactive ion etching (DRIE) is critical for fabricating high-aspect-ratio structures in microelectromechanical systems (MEMS), yet its complex, parameter-dependent process poses significant optimization challenges.
Fang Wang, Hao Yu, Yechen Miao, Ke Sun, Yi Sun, Heng Yang, Xinxin Li   +6 more
doaj   +1 more source

Spatial‐Compatibility‐Assisted Molecular Intercalation in MXenes

Advanced Materials, EarlyView.
This work demonstrates a solvent–free NH4F–mediated route for simultaneous Al removal and molecular intercalation in MXenes. Intercalants are selected by comparing their crystallographic X, Y, and Z dimensions with the MXene interlayer spacing, establishing a spatial‐compatibility criterion that rationalizes guest–host matching and enables predictive ...
Minhao Sheng, Xiaoqing Bin, Xiangyang Liu, Yingji Zhao, Wenxiu Que, Yusuke Asakura, Yusuke Yamauchi   +6 more
wiley   +1 more source

Volatile Memristive Devices With Tunable Temporal Dynamics For Event‐Based Sensing

Advanced Materials, EarlyView.
Tunable volatile memristive devices can serve various neural‐inspired tasks that require different time windows of information retention. The ionic‐based volatility of the presented Pt/a‐STO/TaOx/Ta device stack can be reproducibly and controllably tuned in multiple ways.
Dimitrios Spithouris, Johannes Hellwig, Hugh Greatorex, Clemens Wittberg, Panagiotis Koutsogiannis, César Magén, Elisabetta Chicca, Regina Dittmann   +7 more
wiley   +1 more source

Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography

Advanced Materials, EarlyView.
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh, Min Gu Lee, Hwayoung Kim, Myeongchan Ko, Jungwan Noh, Taewook Go, Jingyao Yu, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +9 more
wiley   +1 more source

Bioinspired Mechanosensitive Organic Artificial Neuron With Programmable Excitatory and Inhibitory Responses via Nonlinear Mechano‐Electrochemical Coupling

Advanced Materials, EarlyView.
Organic artificial neurons couple mechanical deformation and ionic environments through nonlinear mechano‐electrochemical dynamics. Mechanical strain and electrolyte concentration reshape their nonlinear electrical characteristics, programming excitatory or inhibitory spiking responses that mimic mechanosensitive biological neurons and enable ...
Rassen Boukraa, Pietro Belleri, Zsolt M. Kovács‐Vajna, Paschalis Gkoupidenis, Fabrizio Torricelli   +4 more
wiley   +1 more source