Results 51 to 60 of about 19,615 (204)
A Low-Cost CMOS-MEMS Piezoresistive Accelerometer with Large Proof Mass
This paper reports a low-cost, high-sensitivity CMOS-MEMS piezoresistive accelerometer with large proof mass. In the device fabricated using ON Semiconductor 0.5 μm CMOS technology, an inherent CMOS polysilicon thin film is utilized as the piezoresistive
Mohd Haris Md Khir, Hongwei Qu, Peng Qu
doaj +1 more source
Rapid microwave plasma torch engineering tunes crystal phases, carbon graphitization and oxygen‐vacancy defects in HfO2/C@C core‐shell fibrous membranes. Synergistic multi‐loss effects optimize impedance matching to deliver −65.75 dB reflection loss and a 7.37 GHz effective bandwidth for flexible electromagnetic wave absorption.
Qichao Ding +14 more
wiley +1 more source
In recent years, the field of micro- and nanochannel fabrication has seen significant advancements driven by the need for precision in biomedical, environmental, and industrial applications.
Koosha Karimi +5 more
doaj +1 more source
Nitride MXenes remain constrained by a persistent gap between computational prediction and experimental realization. This Review identifies the thermodynamic, kinetic, and chemical barriers limiting their synthesis, critically evaluates emerging fabrication routes, and proposes a multidimensional computational‐experimental framework to accelerate the ...
Naresh Varnakavi, Masoud Soroush
wiley +1 more source
BSA addition to physiological solutions enhances resistance of a Zn alloy to stress corrosion cracking (SCC) but reduces its corrosion resistance. Extended surface characterization explains the contrasting influences on corrosion and SCC. Unexpectedly, the alloy suffers transgranular SCC (TGSCC), despite extensive grain boundary precipitation. Thorough
RK Singh Raman +9 more
wiley +1 more source
Through via holes in fused silica are a key infrastructure element of microwave and millimeter-wave circuits and 3D integration. In this work, etching through via holes in ultra-thin fused silica wafers using deep reactive-ion etching (DRIE) and laser ...
Xiao Li, King Yuk Chan, Rodica Ramer
doaj +1 more source
A graphene‐supported 2D metal–organic network stabilizes highly reactive Fe(I)‐N4 single sites through Co‐induced charge redistribution. Combined experiments and theory reveal Fe(I) formation, oxygen‐driven oxidation, and O2 activation mechanisms, offering a strategy to access low‐valent iron centers relevant to catalytic and biological processes ...
Alessandro Namar +9 more
wiley +1 more source
We report a chemically incorporated fluorinated AlPO4 (AlPO4‐F) architecture that functions as a multifunctional “interfacial fortress” for Li‐rich layered oxides (LLOs). By modulating the surface potential to –32.16 mV, this architecture enriches Li+ concentration and repels detrimental electrolyte anions.
Hojun Moon +13 more
wiley +1 more source
Investigation of Deep Trench Process for Trench-gate IGBT
Deep trench plasma etch process which is suitable for trench-gate IGBT has been developed based on Lam 4420 reactive ion etching (RIE) tool and Cl2. An undercut-free 6 μm-deep trench with round bottom corners and around 3°sidewall slope is obtained by ...
LUO Haihui +3 more
doaj
This paper reports the design and fabrication of capacitive silicon nanomechanical resonators with the selective vibration of a high-order mode. Fixed-fixed beam capacitive silicon resonators have been successfully produced by the use of electron beam ...
Nguyen Van Toan +4 more
doaj +1 more source

