Results 11 to 20 of about 8,725 (286)

Deep reactive ion etching of cylindrical nanopores in silicon for photonic crystals

Nanotechnology, 2022
Abstract Periodic arrays of deep nanopores etched in silicon by deep reactive ion etching are desirable structures for photonic crystals and other nanostructures for silicon nanophotonics. Previous studies focused on realizing as deep as possible nanopores with as high as possible aspect ratios.
Melissa J Goodwin, Cornelis A M Harteveld, Meint J de Boer, Willem L Vos   +3 more
openaire   +4 more sources

Deep reactive ion etching of silicon carbide [PDF]

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2001
In this article, we describe more than 100-μm-deep reactive ion etching (RIE) of silicon carbide (SiC) in oxygen-added sulfur hexafluoride (SF6) plasma. We used a homemade magnetically enhanced, inductively coupled plasma reactive ion etcher (ME-ICP-RIE) and electroplated nickel masks. First, 5 h etching experiments using etching gases with 0%, 5%, 10%
Tanaka, S, Rajanna, K, Abe, T, Esashi, M
openaire   +3 more sources

Silicon Deep Reactive Ion Etching with aluminum hard mask

Materials Research Express, 2019
Silicon Deep Reactive Ion Etching (DRIE) process using a multi-layer mask containing a sputtered Aluminum thin film is studied. Aluminum is a candidate for very high aspect ratio DRIE, due to tis very low etch rate, but its adoption is hindered by the presence of micromasking.
Bagolini, A, Scauso, P, Sanguinetti, S, Bellutti, P   +3 more
openaire   +4 more sources

Precision micro-mechanical components in single crystal diamond by deep reactive ion etching. [PDF]

Microsyst Nanoeng, 2018
The outstanding material properties of single crystal diamond have been at the origin of the long-standing interest in its exploitation for engineering of high-performance micro- and nanosystems.
Toros A, Kiss M, Graziosi T, Sattari H, Gallo P, Quack N.   +5 more
europepmc   +2 more sources

Redeposition-Free Deep Etching in Small KY(WO₄)₂ Samples

Micromachines, 2020
KY(WO4)2 is a promising material for on-chip laser sources. Deep etching of small KY(WO4)2 samples in combination with various thin film deposition techniques is desirable for the manufacturing of such devices.
Simen Mikalsen Martinussen, Raimond N. Frentrop, Meindert Dijkstra, Sonia Maria Garcia-Blanco   +3 more
doaj   +1 more source

Development of Micron Sized Photonic Devices Based on Deep GaN Etching

Photonics, 2021
In order to design and development efficient III-nitride based optoelectronic devices, technological processes require a major effort. We propose here a detailed review focussing on the etching procedure as a key step for enabling high date rate ...
Karim Dogheche, Bandar Alshehri, Galles Patriache, Elhadj Dogheche   +3 more
doaj   +1 more source

Low-temperature smoothing method of scalloped DRIE trench by post-dry etching process based on SF6 plasma

Micro and Nano Systems Letters, 2020
Deep reactive-ion etching (DRIE) is commonly used for high aspect ratio silicon micromachining. However, scalloping, which is the result of the alternating Bosch process of DRIE, can cause many problems in the subsequent process and degrade device ...
Jin Soo Park, Dong-Hyun Kang, Seung Min Kwak, Tae Song Kim, Jung Ho Park, Tae Geun Kim, Seung-Hyub Baek, Byung Chul Lee   +7 more
doaj   +1 more source

Etch mechanism of an Al2O3 hard mask in the Bosch process

Micro and Nano Engineering, 2022
The etching of high aspect ratio structures in silicon via the Bosch process is essential in modern technologies such as microelectromechanical systems (MEMS) and through‑silicon vias (TSV) fabrication.
Martin Drost, Steffen Marschmeyer, Mirko Fraschke, Oksana Fursenko, Florian Bärwolf, Ioan Costina, Mamathamba Kalishettyhalli Mahadevaiah, Marco Lisker   +7 more
doaj   +1 more source

Dry etching and sputtering [PDF]

, 2003
Dry etching is an important process for micro- and nanofabrication. Sputtering effects can arise in two contexts within a dry-etch process. Incoming ions cause removal of volatile products that arise from the interaction between the dry-etch plasma and ...
Wilkinson, C.D.W., Rahman, M., M. Rahman, C. D. W. Wilkinson   +3 more
core   +1 more source

ICP Etching of Silicon for Micro and Nanoscale Devices [PDF]

, 2010
The physical structuring of silicon is one of the cornerstones of modern microelectronics and integrated circuits. Typical structuring of silicon requires generating a plasma to chemically or physically etch silicon.
Henry, Michael David
core   +1 more source