Results 91 to 100 of about 53,870 (328)
Quasi‐Static to Supersonic Energy Absorption of Nanoarchitected Tubulanes and Schwarzites
Advanced Functional Materials, EarlyView.Nanoarchitected energy‐absorptive Tubulanes exhibit record energy absorption under quasi‐static conditions and exceptional inelastic energy dissipation under 750 m s−1 ballistics impact, with high performance spanning strain rates of 12 orders of magnitude.
Peter Serles +16 more
wiley +1 more source
Investigation of Deep Trench Process for Trench-gate IGBT
Kongzhi Yu Xinxi Jishu, 2013 Deep trench plasma etch process which is suitable for trench-gate IGBT has been developed based on Lam 4420 reactive ion etching (RIE) tool and Cl2. An undercut-free 6 μm-deep trench with round bottom corners and around 3°sidewall slope is obtained by ...
LUO Haihui +3 more
doaj
Nanoscale Research Letters, 2018 Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit.
Hao Zhong +4 more
doaj +1 more source
Plasma Nanoscience: from Nano-Solids in Plasmas to Nano-Plasmas in Solids
, 2013 The unique plasma-specific features and physical phenomena in the organization of nanoscale solid-state systems in a broad range of elemental composition, structure, and dimensionality are critically reviewed.
Meyyappan, M. +2 more
core +2 more sources
Advanced Functional Materials, EarlyView.In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda +11 more
wiley +1 more source
Fabrication and electrochemical characterization of ruthenium nanoelectrodes
Current Directions in Biomedical Engineering, 2017 The Fraunhofer IMS has recently developed a technique for producing nanoelectrodes that are generated by atomic layer deposition (ALD) in a via deep reactive ion etching (DRIE) structured sacrificial layer.
Allani Sonja +4 more
doaj +1 more source
Advanced Functional Materials, EarlyView.In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
International Journal of Photoenergy, 2012 For lower reflectance, we applied a maskless plasma texturing technique using reactive ion etching (RIE) on acidic-textured multicrystalline silicon (mc-Si) wafer. RIE texturing had a deep and narrow textured surface and showed excellent low reflectance.
Ji-Myung Shim +12 more
doaj +1 more source
Micromachined Millimetre-Wave Passive Components at 38 and 77 GHz [PDF]
, 2009 A precision micro-fabrication technique has been developed for millimetre-wave components of air-filled three-dimensional structures, such as rectangular coaxial lines or waveguides.
Huang, F. +4 more
core
Gourd‐Inspired Design of Unit Cell with Multiple Gradients for Physiological‐Range Pressure Sensing
Advanced Functional Materials, EarlyView.Gourd‐shaped micro‐dome arrays with coordinated modulus, conductivity, and geometric gradients co‐optimize sensitivity and linearity in piezoresistive tactile sensors. Under pressure, a solid upper dome embeds into a porous lower dome, triggering rapid contact‐area growth and series‐to‐parallel conduction, enabling unsaturated, intensity‐resolved ...
Jiayi Xu +6 more
wiley +1 more source